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Tomohisa Kato

national institute of advanced industrial science and technology

27H指数
309论文数
2.9K被引数
收录论文 19
发表时间
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Theoretical Study of Oxidation Mechanism of SiC on Si-Face ((0001) Surface) Using MnO4–利用MnO4–对SiC的Si面((0001)表面)氧化机理的理论研究
errJournal of Physical Chemistry C
IF3.2
err2026-08-13
err0
PREAI
errMegumi Kayanuma; Tomohisa Kato; Tetsuya Morishita
err分享
err收藏
Macrostep Flow Behavior in 4H-SiC Solution Growth with Different Solvent Compositions and Its Correlation with the Conversion Efficiency of Threading Screw Dislocations不同溶剂组成下4H-SiC溶液生长中的宏观台阶流行为及其与位错 threading screw dislocations 转换效率的相关性
errCrystal Growth & Design
IF0
err2026-08-05
err0
PREAI
errTakeshi Mitani; Kazuma Eto; Shigeyuki Kuboya; Tomohisa Kato
err分享
err收藏
Effect of repeated hot and cold stimulation for the neck and shoulders on muscle fatigue recovery: a pilot study
errINTERNATIONAL JOURNAL OF BIOMETEOROLOGY
IF2.6
err2024-11-28
err0
PREAI
errNomura, Ryoko; Kamiya, Mika; Sato, Maki; Nakayama, Natsuki; Watanabe, Kei; Kato, Tomohisa; Iwase, Satoshi
err分享
err收藏
Ab Initio Molecular Dynamics Approach for Oxidation of SiC Surface in Contact with Aqueous H2O2 Solutions
errJOURNAL OF PHYSICAL CHEMISTRY C
IF3.2
err2024-09-26
err0
PREAI
errMorishita, Tetsuya; Kayanuma, Megumi; Kato, Tomohisa
err分享
err收藏
SiC-based high electron mobility transistor
errAPPLIED PHYSICS LETTERS
IF3.6
err2024-03-18
err7
PREAI
errSazawa, Hiroyuki; Nakajima, Akira; Kuboya, Shigeyuki; Umezawa, Hitoshi; Kato, Tomohisa; Tanaka, Yasunori
err分享
err收藏
Suppression of SiC Inclusions in 4H-SiC Crystals Grown from Si-Cr-C-Based Solution Saturated with SiC
errCRYSTAL GROWTH & DESIGN
IF3.4
err2024-03-06
err1
PREAI
errMitani, Takeshi; Kawanishi, Sakiko; Eto, Kazuma; Kato, Tomohisa; Chaussende, Didier; Yoshikawa, Takeshi
err分享
err收藏
Surface recombination velocities for 4H-SiC: Dependence of excited carrier concentration and surface passivation
errMATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
IF4.6
err2024-02-01
err3
errOAAI
errKato, Masashi; Ogawa, Ayato; Han, Lei; Kato, Tomohisa
err分享
err收藏
Cooperative Reaction of Hydrogen-Networked Water Molecules at the SiC-H2O2 Solution Interface: Microscopic Insights from Ab Initio Molecular Dynamics
errJOURNAL OF PHYSICAL CHEMISTRY C
IF3.2
err2022-07-26
err7
PREAI
errMorishita, Tetsuya; Kayanuma, Megumi; Nakamura, Takenobu; Kato, Tomohisa
err分享
err收藏
Direct visualization of kinetic reversibility of crystallization and dissolution behavior at solution growth interface of SiC in Si-Cr solvent
errSURFACES AND INTERFACES
IF6.3
err2022-02-01
err8
errOAAI
errNakano, Kota; Maruyama, Shingo; Kato, Tomohisa; Yonezawa, Yoshiyuki; Okumura, Hajime; Matsumoto, Yuji
err分享
err收藏
Immobilization of partial dislocations bounding double Shockley stacking faults in 4H-SiC observed by in situ synchrotron X-ray topography
errMATERIALIA
IF2.9
err2021-12-01
err5
PREAI
errFujie, Fumihiro; Harada, Shunta; Suo, Hiromasa; Raghothamachar, Balaji; Dudley, Michael; Hanada, Kenji; Koizumi, Haruhiko; Kato, Tomohisa; Tagawa, Miho; Ujihara, Toru
err分享
err收藏
Temperature dependence of double Shockley stacking fault behavior in nitrogen-doped 4H-SiC studied by in-situ synchrotron X-ray topography
errACTA MATERIALIA
IF9.3
err2020-08-01
err7
PREAI
errFujie, Fumihiro; Harada, Shunta; Hanada, Kenji; Suo, Hiromasa; Koizumi, Haruhiko; Kato, Tomohisa; Tagawa, Miho; Ujihara, Toru
err分享
err收藏
Platinum additive impacts on vapor-liquid-solid growth chemical interface for high-quality SiC single crystal films
errMATERIALS TODAY CHEMISTRY
IF6.7
err2020-06-01
err5
errOAAI
errOsumi, A.; Nakano, K.; Sannodo, N.; Maruyama, S.; Matsumoto, Y.; Mitani, T.; Kato, T.; Yonezawa, Y.; Okumura, H.
err分享
err收藏
Quantitative Analysis of Nanoscale Step Dynamics in High-Temperature Solution-Grown Single Crystal 4H-SiC via In Situ Confocal Laser Scanning Microscope
errCRYSTAL GROWTH & DESIGN
IF3.4
err2017-04-21
err21
PREAI
errOnuma, Aomi; Maruyama, Shingo; Komatsu, Naoyoshi; Mitani, Takeshi; Kato, Tomohisa; Okumura, Hajime; Matsumoto, Yuji
err分享
err收藏
Temperature-Dependent Behavior of 4H-Silicon Carbide Surface Morphology Etched Using Chlorine Trifluoride Gas
errJOURNAL OF THE ELECTROCHEMICAL SOCIETY
IF3.3
err2009-01-01
err18
errOAAI
errHabuka, Hitoshi; Tanaka, Keiko; Katsumi, Yusuke; Takechi, Naoto; Fukae, Katsuya; Kato, Tomohisa
err分享
err收藏
Determination of free carrier density in the low doping regime of 4H-SiC by Raman scattering
errAPPLIED PHYSICS LETTERS
IF3.6
err2008-09-26
err24
PREAI
errNakashima, S.; Kitamura, T.; Kato, T.; Kojima, K.; Kosugi, R.; Okumura, H.; Tsuchida, H.; Ito, M.
err分享
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Observation of surface polarity dependent phonons in SiC by deep ultraviolet Raman spectroscopy
errPHYSICAL REVIEW B
IF3.7
err2007-03-23
err6
PREAI
errNakashima, S.; Mitani, T.; Tomita, T.; Kato, T.; Nishizawa, S.; Okumura, H.; Harima, H.
err分享
err收藏
Correlation between reliability of thermal oxides and dislocations in n-type 4H-SiC epitaxial wafers
errAPPLIED PHYSICS LETTERS
IF3.6
err2006-07-13
err75
PREAI
errSenzaki, Junji; Kojima, Kazutoshi; Kato, Tomohisa; Shimozato, Atsushi; Fukuda, Kenji
err分享
err收藏
Deep ultraviolet raman microspectroscopic characterization of polishing-induced surface damage in SiC crystals
errJOURNAL OF THE ELECTROCHEMICAL SOCIETY
IF3.3
err2006-01-01
err12
PREAI
errNakashima, S; Kato, T; Nishizawa, S; Mitani, T; Okumura, H; Yamamoto, T
err分享
err收藏
Screw and edge dislocations-induced internal strain around micropipes of 6H-SiC single crystals
errMATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
IF4.6
err2001-12-01
err6
PREAI
errOhsato, H; Kato, T; Okuda, T
err分享
err收藏

研究方向

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合作学者
合作期刊
H
Hajime Okumura
H 指数: 56 · 论文数: 815
H
Hisatomo Harima
H 指数: 56 · 论文数: 692
H
Hitoshi Umezawa
H 指数: 55 · 论文数: 660
H
Hitoshi Ohsato
H 指数: 51 · 论文数: 366
T
Takeshi Yoshikawa
H 指数: 48 · 论文数: 385
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