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Yasunori Tanaka

national institute of advanced industrial science & technology (aist)

20H指数
214论文数
2.0K被引数
收录论文 14
发表时间
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A Fast p-n Junction SiC Detector for Heavy-Ion Applications一种用于重离子应用的快速p-n结SiC探测器
errIEEE Transactions on Nuclear Science
IF1.9
err2026-02-01
err0
PREAI
errKitamura, Noritaka; Kishishita, Tetsuichi; Kosugi, Ryoji; Michimasa, Shin'ichiro; Chillery, Thomas; Imai, Nobuaki; Kojima, Reiko; Li, Jiatai; Yokoyama, Rin; Tsuchiya, Ryo; Fujita, Yowichi; Kojima, Kazutoshi; Tanaka, Yasunori
err分享
err收藏
SiC-based high electron mobility transistor
errAPPLIED PHYSICS LETTERS
IF3.6
err2024-03-18
err7
PREAI
errSazawa, Hiroyuki; Nakajima, Akira; Kuboya, Shigeyuki; Umezawa, Hitoshi; Kato, Tomohisa; Tanaka, Yasunori
err分享
err收藏
High surface laser-induced damage threshold of SrB4O7 single crystals under 266-nm (DUV) laser irradiation
errOPTICS EXPRESS
IF3.3
err2020-09-16
err9
errOAAI
errTanaka, Yasunori; Murai, Ryota; Takahashi, Yoshinori; Sugita, Tsuyoshi; Toh, Daisetsu; Yamauchi, Kazuto; Aikawa, Sora; Marui, Haruki; Umeda, Yuji; Funamoto, Yusuke; Kamimura, Tomosumi; Empizo, Melvin John F.; Imanishi, Masayuki; Mori, Yusuke; Yoshimura, Masashi
err分享
err收藏
Evaluation of silicon- and carbon-face SiO2/SiC MOS interface quality based on scanning nonlinear dielectric microscopy
errAPPLIED PHYSICS LETTERS
IF3.6
err2017-08-10
err9
PREAI
errChinone, Norimichi; Nayak, Alpana; Kosugi, Ryoji; Tanaka, Yasunori; Harada, Shinsuke; Okumura, Hajime; Cho, Yasuo
err分享
err收藏
Systematic investigation on in-plane anisotropy of surface and buried channel mobility of metal-oxide-semiconductor field-effect-transistors on Si-, a-, and m-face 4H-SiC
errAPPLIED PHYSICS LETTERS
IF3.6
err2015-03-12
err15
PREAI
errAriyoshi, K.; Iijima, R.; Harada, S.; Kojima, K.; Senzaki, J.; Tanaka, Y.; Takao, K.; Shinohe, T.
err分享
err收藏
Effects of interface state density on 4H-SiC n-channel field-effect mobility (vol 104, 083516, 2014)
errAPPLIED PHYSICS LETTERS
IF3.6
err2015-03-12
err4
errOAAI
errYoshioka, Hironori; Senzaki, Junji; Shimozato, Atsushi; Tanaka, Yasunori; Okumura, Hajime
err分享
err收藏
SiC-SIT Circuit Breakers With Controllable Interruption Voltage for 400-V DC Distribution Systems用于400伏直流配电系统的具有可控中断电压的SiC SIT断路器
errIEEE TRANSACTIONS ON POWER ELECTRONICS
IF6.5
err2014-05-01
err104
PREAI
errSato, Yukihiko; Tanaka, Yasunori; Fukui, Akiyoshi; Yamasaki, Mikio; Ohashi, Hiromichi
err分享
err收藏
Microstructures of high-growth-rate (up to 8.3 nm/s) microcrystalline silicon photovoltaic layers and their influence on the photovoltaic performance of thin-film solar cells
errJOURNAL OF NON-CRYSTALLINE SOLIDS
IF3.5
err2008-05-01
err24
PREAI
errSobajima, Y.; Nakano, S.; Nishino, M.; Tanaka, Y.; Toyama, T.; Okamoto, H.
err分享
err收藏
A novel HSF1-mediated death pathway that is suppressed by heat shock proteins
errEMBO JOURNAL
IF8.3
err2006-10-05
err96
errOAAI
errHayashida, Naoki; Inouye, Sachiye; Fujimoto, Mitsuaki; Tanaka, Yasunori; Izu, Hanae; Takaki, Eiichi; Ichikawa, Hitoshi; Rho, Jaerang; Nakai, Akira
err分享
err收藏
Maintenance of olfactory neurogenesis requires HSF1, a major heat shock transcription factor in mice
errJOURNAL OF BIOLOGICAL CHEMISTRY
IF3.9
err2006-02-01
err72
errOAAI
errTakaki, E; Fujimoto, M; Sugahara, K; Nakahari, T; Yonemura, S; Tanaka, Y; Hayashida, N; Inouye, S; Takemoto, T; Yamashita, H; Nakai, A
err分享
err收藏
Active HSF1 significantly suppresses polyglutamine aggregate formation in cellular and mouse models
errJOURNAL OF BIOLOGICAL CHEMISTRY
IF3.9
err2005-10-01
err193
PREAI
errFujimoto, M; Takaki, E; Hayashi, T; Kitaura, Y; Tanaka, Y; Inouye, S; Nakai, A
err分享
err收藏
Reverse characteristics of pn diodes on 4H-SiC(000-1) C and (11-20) face
errAPPLIED PHYSICS LETTERS
IF3.6
err2004-03-08
err19
PREAI
errTanaka, Y; Fukuda, K; Arai, K; Kojima, K; Suzuki, T; Yatsuo, T
err分享
err收藏
Fabrication of 1.4-kV mesa-type p+-n diodes with avalanche breakdown and without forward degradation on high-quality 6H-SiC substrate
errAPPLIED PHYSICS LETTERS
IF3.6
err2003-07-14
err9
PREAI
errTanaka, Y; Nishizawa, S; Fukuda, K; Arai, K; Ohno, T; Oyanagi, N; Suzuki, T; Yatsuo, T
err分享
err收藏
The post-annealing temperature dependences of electrical properties and surface morphologies for arsenic ion-implanted 4H-SiC at high temperature
errAPPLIED SURFACE SCIENCE
IF6.9
err2000-06-01
err12
PREAI
errSenzaki, J; Fukuda, K; Imai, S; Tanaka, Y; Kobayashi, N; Tanoue, H; Okushi, H; Arai, K
err分享
err收藏

研究方向

暂时未获取到该数据
合作学者
合作期刊
S
Shigenobu Yonemura
H 指数: 72 · 论文数: 302
A
Akira Nakai
H 指数: 64 · 论文数: 266
H
Hajime Okumura
H 指数: 56 · 论文数: 815
H
Hitoshi Umezawa
H 指数: 55 · 论文数: 660
H
Hitoshi Ichikawa
H 指数: 54 · 论文数: 395
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