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D

Daewon Ha

samsung electronics

25H-index
145Paper Count
2.9KCitation Count
Published Papers 30
Publication Date
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Simultaneous Enhancement of Performance and Stability in Dual-Gate a-IGZO Thin-Film Transistors via Single-Step Laser Annealing for Capacitor-Less DRAM
errAdvanced Functional Materials
IF19
err2026-07-31
err0
errOAAI
errSihyeon Kwon; Junil Kim; Geuntae Park; Minseok Kim; Woohyun Hwang; Wanki Kim; Daewon Ha; Byeongmoon Lee; Jae Eun Jang; Hyuk-Jun Kwon
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Ionic Field-Effect Transistor Achieving Large Memory Window and Enhanced Retention via Ultrathin Ozone-Oxidized Barrier Layer
errIEEE Electron Device Letters
IF4.5
err2026-06-12
err0
PREAI
errJongseon Seo; Geonhui Han; Laeyong Jung; Junghoon Park; Jongho Park; Suhwan Lim; Wanki Kim; Daewon Ha; Hyunsang Hwang
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Hybrid ferroelectric-ionic memristive hardware for high scalability in-memory computing
errNature Communications
IF15.7
err2026-05-21
err0
errOAAI
errJeong-Han Kim; Wonjun Shin; Ryun-Han Koo; Jangsaeng Kim; Eugene Park; Piush Behera; Sojin Kim; Jinseok Hong; Feras Al-Dirini; Been Kwak; Jiwon You; Jiseong Im; Dooyong Koh; Yejin Hong; Qinyuan Xue; Hyun-Min Kim; Hyunho Seok; Youngchan Cho; Hwiin Ju; Wooje Jung; Kyunghwan Lee; Daewon Ha; Jong-Ho Lee; Seung-Yong Lee; Deok-Hwang Kwon; Frances M. Ross; Youngho Kang; Suraj S. Cheema; Daewoong Kwon
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Crystalline IGO TFTs With High Reliability Under DRAM-Compatible 600 °C N<sub>2</sub> Thermal Budgets
errIEEE Electron Device Letters
IF4.5
err2026-03-19
err0
PREAI
errJeong Eun Oh; Nahyun Kim; Jiwon Chae; Min Hee Cho; Daewon Ha; Jae Kyeong Jeong
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A Novel Ferroelectric NAND Cell Structure Featuring Ultrathin IGZO Charge Trap Layer for Superior Endurance and Retention
errIEEE Transactions on Electron Devices
IF3.2
err2026-02-11
err0
PREAI
errHyunjun Kang; Hongrae Joh; Junhyeok Kwak; Giuk Kim; Hyojun Choi; Hoon Kim; Sanghyun Park; Kwangyou Seo; Kwangsoo Kim; Wanki Kim; Daewon Ha; Jinho Ahn; Sanghun Jeon
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Experiments and Modeling of Defect Dynamics and BTI Behavior in Doped InO TFTs During 400 °C Postprocessing Forming Gas Annealing
errIEEE Transactions on Electron Devices
IF3.2
err2026-02-04
err0
PREAI
errYu-Hsin Kuo; Chengyang Zhang; Priyankka Ravikumar; Sanghyun Kang; Taeyoung Song; Marco Villena; Luca Larcher; Hwan Kim; Minji Hong; Pilsang Yun; Gaurav Thareja; Shimeng Yu; Daewon Ha; Suman Datta; Julia Medvedeva; Asif Khan
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Erase-Verify Operation in Ferroelectric 3D Vertical NAND Storage
errIEEE Electron Device Letters
IF4.5
err2025-12-05
err0
PREAI
errShubham Kumar; Saikat Chakraborty; Yixin Qin; Moonyoung Jung; Kwangyou Seo; Kwangsoo Kim; Wanki Kim; Daewon Ha; Vijaykrishnan Narayanan; Jaydeep P. Kulkarni; Kai Ni
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Ferroelectric transistors for low-power NAND flash memory
errNature
IF48.5
err2025-11-26
err0
PREAI
errSijung Yoo; Taek Jung Kim; Seung-Geol Nam; Donghoon Kim; Kihong Kim; Yunseong Lee; Moonil Jung; Kwang-Hee Lee; Seokhoon Choi; Seung Dam Hyun; Min-Hyun Lee; Seogwoo Hong; Haesung Kim; Ki Deok Bae; Hyangsook Lee; Jung Yeon Won; Dong-Jin Yun; Byeong Gyu Chae; Wook Ghee Hahn; Chang Hyun Joo; Sanghyun Jo; Yoonsang Park; Kyung Mee Song; Kyooho Jung; Suhwan Lim; Kwangyou Seo; Kwangsoo Kim; Wanki Kim; Daewon Ha; Jee-Eun Yang; Seung-Yeul Yang; Sangwook Kim; Jinseong Heo; Duk-Hyun Choe
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Laminated Ferroelectric Stack for Enhanced ISPP Slope and Endurance in FE-NAND
errIEEE Electron Device Letters
IF4.5
err2025-11-03
err0
PREAI
errHyun Jae Lee; Minji Sohn; Sijung Yoo; Yunseong Lee; Kihong Kim; Seung-Geol Nam; Yoonsang Park; Sanghyun Jo; Donghoon Kim; Jinseong Heo; Wanki Kim; Daewon Ha; Asif Khan; Shimeng Yu; Duk-Hyun Choe; Suman Datta
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Pushing the limits of NAND technology scaling with ferroelectrics
errMRS Bulletin
IF4.9
err2025-10-06
err0
errOAAI
errPrasanna Venkatesan; Lance Fernandes; Sanghyun Kang; Priyankka Ravikumar; Taeyoung Song; Chinsung Park; Dipjyoti Das; Kijoon H. P. Kim; Kwangyou Seo; Kwangsoo Kim; Kai Ni; Andrea Padovani; Mahendra Pakala; Luca Larcher; Gaurav Thareja; Wanki Kim; Daewon Ha; Asif Khan
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Stabilized Negative Capacitance for Near-Theoretical Efficiency and High Reliability in Charge Trap Flash Memory
errMaterials Today Physics
IF9.7
err2025-09-19
err0
PREAI
errSangho Lee; Giuk Kim; Yunseok Nam; Yangjin Jeong; Hyunjun Kang; Woongjin Kim; Hunbeom Shin; Mincheol Shin; Sanghyun Park; Kwangyou Seo; Kwangsoo Kim; Wanki Kim; Daewon Ha; Jinho Ahn; Sanghun Jeon
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Gate stack engineering of two-dimensional transistors
errNature Electronics
IF40.9
err2025-09-10
err0
PREAI
errYeon Ho Kim; Donghun Lee; Woong Huh; Jaeho Lee; Donghyun Lee; Gunuk Wang; Jaehyun Park; Daewon Ha; Chul-Ho Lee
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Enhanced Device Characteristics of Hybrid-Channel (Poly-Si/IGO) Structures with Ga2O3 and Al2O3 Interlayers by Suppressing Oxidation-Induced Variability for Ultra-High-Density 3D NAND Flash Memory Applications
errAdvanced Functional Materials
IF19
err2025-09-09
err0
PREAI
errTaewon Hwang; Jeongmin Shin; So Young Lim; Sohee Kim; Jae-Min Sim; Su-Hwan Choi; Youngji Noh; Wanki Kim; Daewon Ha; Jin-Seong Park; Yun-Heub Song
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In-Situ Surface Energy Engineering for ALD-Derived Highly Reliable Top Gate In<sub>2</sub>O<sub>3</sub> Thin-Film Transistors
errIEEE Electron Device Letters
IF4.5
err2025-09-05
err0
PREAI
errJeong Eun Oh; Cheol Hee Choi; Taikyu Kim; Seong Hun Yoon; Seon Woong Bang; Jiwon Chae; Changik Im; Min Hee Cho; Pilsang Yun; Daewon Ha; Jae Kyeong Jeong
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Middle Interlayer Engineered Ferroelectric NAND Flash Overcoming Reliability and Stability Bottlenecks for Next-Generation High-Density Storage Systems
errAdvanced Science
IF14.1
err2025-08-23
err0
errOAAI
errGiuk Kim; Sangho Lee; Hyojun Choi; Yangjin Jung; Woongjin Kim; Sanghyun Park; Kwangyou Seo; Kwangsoo Kim; Wanki Kim; Daewon Ha; Mincheol Shin; Jinho Ahn; Sanghun Jeon
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Enabling the Angstrom Era: 2D material-based multi-bridge-channel complementary field effect transistors
errnpj 2D Materials and Applications
IF8.8
err2025-08-02
err0
errOAAI
errHoon Hahn Yoon; Jin Young Park; Yonas Tsegaye Megra; Ju Hwan Baek; Minuk Song; Deji Akinwande; Daewon Ha; Dong-Ho Kang; Hyeon-Jin Shin
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Enhancing Program Speed and Diminishing Read After Write Delay by Metal Work Function Engineering
errIEEE Electron Device Letters
IF4.5
err2025-08-01
err0
PREAI
errSeokjoong Shin; Giuk Kim; Hyojun Choi; Sanghyun Park; Kwangyou Seo; Kwangsoo Kim; Wanki Kim; Daewon Ha; Jinho Ahn; Sanghun Jeon
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A Novel Indium Gallium Zinc Oxide Channel-Based Electrochemical Field Effect Transistor for Physical Reservoir Computing
errAdvanced Intelligent Systems
IF6.1
err2025-07-24
err0
errOAAI
errHyejin Kim; Jinho Byun; Junghoon Park; Kiheun Lee; Daewon Ha; Seyoung Kim
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Synaptic Weight Cell Enabled by Ferroelectric FETs With Gate Side Charge Injection
errIEEE Electron Device Letters
IF4.5
err2025-07-01
err0
PREAI
errQi Zheng; Yixin Qin; Suhwan Lim; Kijoon Kim; Kwangsoo Kim; Wanki Kim; Daewon Ha; Abhronil Sengupta; Shimeng Yu; Vijaykrishnan Narayanan; Kai Ni
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InGaZnO4 and In2O3 Mobility Trend: The Role of Structural Disorder from Amorphous to Crystalline States
errACS MATERIALS LETTERS
IF8.7
err2025-04-27
err0
PREAI
errJang, H; Kim, T; Lee, W; Cho, M; Ha, D; Alam, MA; Ye, PD; Jeong, C
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Research Directions

No research directions
Co-authors
Cooperation Journals
S
Suman Datta
H-index: 79 · Papers: 648
S
Shimeng Yu
H-index: 76 · Papers: 635
D
Deji Akinwande
H-index: 75 · Papers: 490
M
Muhammad A. Alam
H-index: 69 · Papers: 621
K
Kwanghee Lee
H-index: 69 · Papers: 535
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