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Schild, Tanya; Wallisch, Patrick; Zhao, Yixuan; Wang, Ya-Ting; Haughton, Lyric; Chirayil, Rachel; Pierpont, Kaitlyn; Chen, Kevin; Nunes-Violante, Sara; Cross, Justin; de Stanchina, Elisa; Thompson, Craig B.; Scheinberg, David A.; Perry, Justin S. A.; Keshari, Kayvan R. Share Save Share Save Share Save Threshold voltage instability in III-nitride heterostructure metal-insulator-semiconductor high-electron-mobility transistors: Characterization and interface engineeringHuang, Sen; Wang, Xinhua; Yao, Yixu; Deng, Kexin; Yang, Yang; Jiang, Qimeng; Liu, Xinyu; Guo, Fuqiang; Shen, Bo; Chen, Kevin J.; Hao, Yue Share Save Share Save Share Save Share Save Publisher's Note: Polarization enhanced two-dimensional hole gas in III-nitride heterostructures for cryogenically operated GaN-based p-channel field effect transistors [Appl. Phys. Lett. 123, 262107 (2023)]Wang, Yingjie; Huang, Sen; Jiang, Qimeng; Wang, Xinhua; Ji, Zhongchen; Fan, Jie; Yin, Haibo; Wei, Ke; Liu, Xinyu; Sun, Qian; Chen, Kevin J. Share Save Share Save Share Save Share Save 
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