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A.S. Augustine Fletcher

srm institute of science and technology

14H-index
35Paper Count
977Citation Count
Published Papers 12
Publication Date
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MXene based Nanostructures for NeuroBiosensing: A Review
errMaterials Today Sustainability
IF7.9
err2026-08-18
err0
errOAAI
errA.S.Augustine Fletcher; J. Ajayan; Asisa Kumar Panigrahy; P. Murugapandiyan; Deepak Kumar Panda; null Bestley Joe; Amit Krishna Dwivedi
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errSave
Inorganic Nanocatalysts for Energy Systems, Environmental/Industrial Processes and Healthcare Applications : A Comprehensive Review
errMaterials Today Sustainability
IF7.9
err2025-10-04
err0
errOAAI
errJ. Ajayan; S. Sreejith; B. Mounika; A.S. Augustine Fletcher; Ribu Mathew; M. Saravanan; Puneet Sharma
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errSave
An Area Efficient Approach to Realize Vedic Multiplier using 4-2 Compressor adder for Image processing Applications
errINTERNATIONAL JOURNAL OF ELECTRONICS
IF1.1
err2025-09-01
err0
PREAI
errDhanasekar, S.; Govindaraj, V.; Augustine Fletcher, A. S.
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errSave
Recent advancement in ScAlN/GaN high electron mobility transistors: Materials, properties, and device performance
errMATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
IF4.6
err2025-07-01
err0
PREAI
errMurugapandiyan, P.; Maheswari, S.; Fletcher, A. S. Augustine; Saranya, G.; Anandan, P.
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errSave
Challenges in material processing and reliability issues in AlGaN/GaN HEMTs on silicon wafers for future RF power electronics & switching applications: A critical review
errMATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
IF4.6
err2022-11-01
err72
PREAI
errAjayan, J.; Nirmal, D.; Mohankumar, P.; Mounika, B.; Bhattacharya, Sandip; Tayal, Shubham; Fletcher, A. S. Augustine
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errSave
Enhanced drain current and cut off frequency in AlGaN/GaN HEMT with BGaN back barrier
errMATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE MATERIALS
IF4.6
err2022-10-01
err13
PREAI
errHamza, K. Husna; Nirmal, D.; Fletcher, A. S. Augustine; Ajayan, J.; Natarajan, Ramkumar
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Influence of AlN passivation on thermal performance of AlGaN/GaN high-electron mobility transistors on sapphire substrate: A simulation study
errMATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE MATERIALS
IF4.6
err2021-11-01
err7
errOAAI
errMurugapandiyan, P.; Nirmal, D.; Hasan, Md Tanvir; Varghese, Arathy; Ajayan, J.; Fletcher, A. S. Augustine; Ramkumar, N.
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errSave
Highly scaled graded channel GaN HEMT with peak drain current of 2.48 A/mm
errAEU-INTERNATIONAL JOURNAL OF ELECTRONICS AND COMMUNICATIONS
IF3.2
err2021-07-01
err17
PREAI
errHamza, K. Husna; Nirmal, D.; Fletcher, A. S. Augustine; Arivazhagan, L.; Ajayan, J.; Natarajan, Ramkumar
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errSave
Improved RF and DC performance in AlGaN/GaN HEMT by P-type doping in GaN buffer for millimetre-wave applications
errAEU-INTERNATIONAL JOURNAL OF ELECTRONICS AND COMMUNICATIONS
IF3.2
err2019-08-01
err28
PREAI
errArivazhagan, L.; Nirmal, D.; Godfrey, D.; Ajayan, J.; Prajoon, P.; Fletcher, A. S. Augustine; Jone, A. Amir Anton; Kumar, J. S. Raj
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errSave
Analysis of AlGaN/GaN HEMT using discrete field plate technique for high power and high frequency applications
errAEU-INTERNATIONAL JOURNAL OF ELECTRONICS AND COMMUNICATIONS
IF3.2
err2019-02-01
err60
PREAI
errFletcher, A. S. Augustine; Nirmal, D.; Ajayan, J.; Arivazhagan, L.
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errSave
Current collapse modeling in AlGaN/GaN HEMT using small signal equivalent circuit for high power application
errSUPERLATTICES AND MICROSTRUCTURES
IF3.3
err2018-01-01
err39
PREAI
errNirmal, D.; Arivazhagan, L.; Fletcher, A. S. Augustine; Ajayan, J.; Prajoon, P.
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errSave
A survey of Gallium Nitride HEMT for RF and high power applications
errSUPERLATTICES AND MICROSTRUCTURES
IF3.3
err2017-09-01
err206
PREAI
errFletcher, A. S. Augustine; Nirmal, D.
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errSave

Research Directions

The data has not been retrieved yet.
Co-authors
Cooperation Journals
J
J. Ajayan
H-index: 32 · Papers: 236
D
D. Nirmal
H-index: 32 · Papers: 200
S
Sandip Bhattacharya
H-index: 31 · Papers: 219
P
P. Anandan
H-index: 25 · Papers: 92
A
Asisa Kumar Panigrahy
H-index: 20 · Papers: 117
View more