Not logged inGaN high electron mobility transistors with a breakdown voltage over 2500 V achieved by low temperature MBE growth, subdivision of channel, and single field plate structure
Yang, Zhichao; Liao, Eason; Ding, Daniel; Zhuang, Jungang; Dong, Hao; Yang, Han; Zhu, Lei; Zhang, Bingliang; Yu, Guohao; Zeng, Zhongming; Zhang, Baoshun
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SaveGate leakage mechanisms of the AlGaN/GaN HEMT with fluorinated graphene passivation
Ding, Xiaoyu; Song, Liang; Yu, Guohao; Cai, Yong; Sun, Yuhua; Zhang, Bingliang; Du, Zhongkai; Zeng, Zhongming; Zhang, Xinping; Zhang, Baoshun
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SaveEffect of bromide on molecular transformation of dissolved effluent organic matter during ozonation, UV/H2O2, UV/persulfate, and UV/chlorine treatments
Zhang, Bingliang; Fang, Zhuoyao; Wang, Shu; Shi, Xifeng; Guo, Bo; Gao, Jie; Wang, Dandan; Zong, Wansong
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