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SaveShare Save Share Save Share Save Share Save Gate Leakage suppression and breakdown improvement of InAlN/GaN MIS-HEMTs with N2O surface treatment
Jiang, Yang; Du, Fangzhou; Wang, Peiran; He, Jiaqi; Wen, Kangyao; Deng, Chenkai; Zhang, Yi; Li, Mujun; Wang, Xiaohui; Wang, Zhongrui; Wang, Qing; Yu, Hongyu Share Save A Novel AlGaN/GaN SBD Thermal Sensor With Ultralow Power, Excellent Linearity, and High SensitivitySun, Yuhan; Wen, Kangyao; Du, Fangzhou; Deng, Chenkai; Li, Wenmao; He, Jiaqi; Hu, Qiaoyu; Jiang, Yang; Sokolovskij, Robert; Wang, Qing; Jiang, Yu-Long; Yu, Hong-Yu Share Save Suppression of Short-Channel Effects in AlGaN/GaN HEMTs Using SiNx Stress-Engineered TechniqueDeng, Chenkai; Tang, Chuying; Wang, Peiran; Cheng, Wei-Chih; Du, Fangzhou; Wen, Kangyao; Zhang, Yi; Jiang, Yang; Tao, Nick; Wang, Qing; Yu, Hongyu Share Save MEMS Oscillators-Network-Based Ising Machine with Grouping MethodDeng, Yi; Zhang, Yi; Zhang, Xinyuan; Jiang, Yang; Chen, Xi; Yang, Yansong; Tong, Xin; Cai, Yao; Liu, Wenjuan; Sun, Chengliang; Shang, Dashan; Wang, Qing; Yu, Hongyu; Wang, Zhongrui Share Save Lithium Niobate MEMS Antisymmetric Lamb Wave Resonators with Support StructuresZhang, Yi; Jiang, Yang; Tang, Chuying; Deng, Chenkai; Du, Fangzhou; He, Jiaqi; Hu, Qiaoyu; Wang, Qing; Yu, Hongyu; Wang, Zhongrui Share Save A 2D Heterostructure-Based Multifunctional Floating Gate Memory Device for Multimodal Reservoir ComputingZha, Jiajia; Xia, Yunpeng; Shi, Shuhui; Huang, Haoxin; Li, Siyuan; Qian, Chen; Wang, Huide; Yang, Peng; Zhang, Zhuomin; Meng, You; Wang, Wei; Yang, Zhengbao; Yu, Hongyu; Ho, Johnny C.; Wang, Zhongrui; Tan, Chaoliang Share Save CMOS backend-of-line compatible memory array and logic circuitries enabled by high performance atomic layer deposited ZnO thin-film transistorWang, Wenhui; Li, Ke; Lan, Jun; Shen, Mei; Wang, Zhongrui; Feng, Xuewei; Yu, Hongyu; Chen, Kai; Li, Jiamin; Zhou, Feichi; Lin, Longyang; Zhang, Panpan; Li, Yida Share Save Share Save Share Save Share Save The effect of annealing on the Sn-doped (-201) β-Ga2O3 bulkFeng, Boyuan; He, Gaohang; Zhang, Xiaodong; Chen, Xiao; Li, Zhengcheng; Xu, Leilei; Huang, Rong; Feng, Jiagui; Wu, Ying; Jia, Zhitai; Yu, Hongyu; Zeng, Zhongming; Ding, Sunan Share Save Atomic layer etching technique for InAlN/GaN heterostructure with AlN etch-stop layerDu, Fangzhou; Jiang, Yang; Qiao, Zepeng; Wu, Zhanxia; Tang, Chuying; He, Jiaqi; Zhou, Guangnan; Cheng, Wei-Chih; Tang, Xinyi; Wang, Qing; Yu, Hongyu Share Save Share Save Share Save Distinguishing various influences on the electrical properties of thin-barrier AlGaN/GaN heterojunctions with in-situ SiNx capsHe, Jiaqi; Cheng, Wei-Chih; Jiang, Yang; Fan, Mengya; Zhou, Guangnan; Yang, Gaiying; Jiang, Lingli; Wang, Xiang; Wil, Zhanxia; Wang, Qing; Yu, Hongyu Share Save 
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