Mei Wu - Publications, H-index & Citations

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Mei Wu

guizhou university

22H-index

123Paper Count

1.4KCitation Count

Published Papers 41

Publication Date

Coordinating carbon, electricity, and CCER markets for cost-effective decarbonization of China's power sector

Applied Energy

IF11

2026-07-21

PREAI

Yu-Jie Hu; Mei Wu; Bao-Jun Tang

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High Power Density Millimeter-Wave Ultra-Thin InGaN Channel DH-HEMTs

IEEE Electron Device Letters

IF4.5

2026-05-28

PREAI

Hao Lu; Bin Hou; Ling Yang; Longge Deng; Meng Zhang; Mei Wu; Kai Cheng; Xiaohua Ma; Yue Hao

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4.3-kV Fully Vertical <italic>β</italic>-Ga<sub>2</sub>O<sub>3</sub> Heterojunction Barrier Schottky Diode With Sputtered p-GaN

IEEE Transactions on Electron Devices

IF3.2

2026-05-08

PREAI

Qingyuan Chang; Ling Yang; Bin Hou; Mao Jia; Youjun Zhu; Mei Wu; Meng Zhang; Qing Zhu; Hao Lu; Xichen Wang; Chunzhou Shi; Jiale Du; Qian Yu; Mengdi Li; Xiaohua Ma; Yue Hao

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Analytical Model on the Threshold Voltage of Charge-Trap-Based Hybrid Gate-Stack GaN MIS-HEMT

IEEE Transactions on Electron Devices

IF3.2

2026-04-27

PREAI

Tianqi Pan; Bin Hou; Ling Yang; Jiale Du; Kaiwen Chen; Yifan Chen; Hailin Liu; Mei Wu; Meng Zhang; Hao Lu; Mao Jia; Xiaohua Ma; Yue Hao

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Record- low thermal boundary resistance of GaN-on-diamond structure with ultra-high bonding rate via surface reconstruction bonding technique

Journal of Alloys and Compounds

IF6.3

2026-02-17

PREAI

Shiming Li; Mei Wu; Yuan Li; Xiaohan He; Haolun Sun; Ling Yang; Hao Lu; Bin Hou; Xu Zou; Meng Zhang; Fengwen Mu; Chao Yuan; Xiaohua Ma; Yue Hao

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High Reliability and Breakdown Voltage of GaN HEMTs on Free-Standing GaN Substrates

Nanomaterials 2025, Vol. 15, Page 1882

IF4.3

2025-12-15

OAAI

Shiming Li; Mei Wu; Ling Yang; Hao Lu; Bin Hou; Meng Zhang; Xiaohua Ma; Yue Hao

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Super-resolution reconstruction of thermal property distributions in transient thermoreflectance

JOURNAL OF APPLIED PHYSICS

IF2.5

2025-09-28

OAAI

Chen, Zihan; Li, Shiming; Mao, Yali; Zhou, Shaojie; Wu, Jie; Xie, Dong; Hu, Xing; Liu, Tianjian; Wu, Mei; Yuan, Chao

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High performance ring-type p-GaN AlGaN/GaN HEMTs using reactively sputtered NiNx gate

Vacuum

IF3.9

2025-09-12

PREAI

Mao Jia; Bin Hou; Ling Yang; Qian Xiao; Zhiqiang Xue; Meng Zhang; Mei Wu; Hao Lu; Xiaohua Ma; Yue Hao

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A Series-Shunt Compact GaN HEMT With High Isolation and Broadband Performance for RF Switch Application

IEEE Microwave and Wireless Technology Letters

IF3.4

2025-08-15

PREAI

Xu Zou; Meng Zhang; Ling Yang; Bin Hou; Mei Wu; Chupeng Yi; Hao Lu; Mao Jia; Qian Yu; Chunzhou Shi; Shiming Li; Qingyuan Chang; Wenze Gao; Yutong Jiang; Xiaohua Ma; Yue Hao

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Atomic layer-deposited HfO2 artificial cathode electrolyte interphase (CEI) for high-voltage stable NMC811 cathodes

Journal of Power Sources

IF7.9

2025-07-02

OAAI

Ruoxu Shang; Patrick John Hays; Mei Teng Wu; Seth Ariel Tongay; Mihrimah Ozkan; Cengiz S. Ozkan

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Interfacial molybdate-enabled electric field deconfinement to passivate water oxidation for wide-potential biomass electrooxidation

JOURNAL OF COLLOID AND INTERFACE SCIENCE

IF9.7

2025-04-25

PREAI

Wang, Keping; Wu, Mei; Zhang, Yan; Su, Yaqiong; Yang, Song; Li, Hu

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Gate conduction mechanisms and high Vth stability of Cu-gated p-GaN HEMT

SCIENCE CHINA-INFORMATION SCIENCES

IF7.6

2025-04-17

PREAI

Jia, Mao; Hou, Bin; Yang, Ling; Zhang, Meng; Wu, Mei; Lu, Hao; Xue, Zhiqiang; Du, Jiale; Chang, Qingyuan; Xiao, Qian; Ma, Xiaohua; Hao, Yue

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Theoretical Study of (La, Mn) Codoping on the Modification of Photonic Performance in BaTiO3 Materials

ACS APPLIED MATERIALS & INTERFACES

IF8.2

2025-03-21

PREAI

Kang, Z; Wu, M; Li, JH; Zhang, JM; Tian, HY; Wu, YK; Wang, X

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Recent Advances in AlN-Based Acoustic Wave Resonators

MICROMACHINES

IF3

2025-02-11

OAAI

Lu, Hao; Hao, Xiaorun; Yang, Ling; Hou, Bin; Zhang, Meng; Wu, Mei; Dong, Jie; Ma, Xiaohua

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3 kV fully vertical β-Ga2O3 junction termination extension Schottky barrier diode with sputtered p-GaN

APPLIED PHYSICS LETTERS

IF3.6

2025-02-10

PREAI

Chang, Qingyuan; Hou, Bin; Yang, Ling; Jia, Mao; Zhu, Youjun; Wu, Mei; Zhang, Meng; Zhu, Qing; Lu, Hao; Xu, Jiarui; Shi, Chunzhou; Du, Jiale; Yu, Qian; Li, Mengdi; Zou, Xu; Sun, Haolun; Ma, Xiaohua; Hao, Yue

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Improved p-GaN/AlGaN/GaN HEMTs with magnetronsputtered AlN cap layer

APPLIED SURFACE SCIENCE

IF6.9

2025-02-01

PREAI

Jia, Mao; Hou, Bin; Yang, Ling; Xue, Zhiqiang; Xiao, Qian; Zhang, Meng; Lu, Hao; Wu, Mei; Hong, Xitong; Du, Jiale; Chang, Qingyuan; Wang, Xiao; Li, Yang; Ao, Jinping; Ma, Xiaohua; Hao, Yue

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TSHDNet: temporal-spatial heterogeneity decoupling network for multi-mode traffic flow prediction

APPLIED INTELLIGENCE

IF3.5

2025-01-14

PREAI

Wu, Mei; Weng, Wenchao; Wang, Xinran; Seng, Dewen

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A review of GaN RF devices and power amplifiers for 5G communication applications

FUNDAMENTAL RESEARCH

IF6.3

2025-01-01

OAAI

Lu, Hao; Zhang, Meng; Yang, Ling; Hou, Bin; Martinez, Rafael Perez; Mi, Minhan; Du, Jiale; Deng, Longge; Wu, Mei; Chowdhury, Srabanti; Ma, Xiaohua; Hao, Yue

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The Effect of Channel Layer Thickness on the Performance of GaN HEMTs for RF Applications

MICROMACHINES

IF3

2024-12-24

OAAI

Yu, Qian; Wu, Sheng; Zhang, Meng; Yang, Ling; Zou, Xu; Lu, Hao; Shi, Chunzhou; Gao, Wenze; Wu, Mei; Hou, Bin; Qiu, Gang; He, Xiaoning; Ma, Xiaohua; Hao, Yue

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Enhancing thermal dissipation ability and electrical performance in GaN-on-GaN HEMTs through stepped-carbon buffer design

APPLIED PHYSICS LETTERS

IF3.6

2024-11-20

PREAI

Li, Shiming; Meng, Biwei; Wu, Mei; Sun, Haolun; Yang, Bowen; Yang, Ling; Zou, Xu; Zhang, Meng; Lu, Hao; Hou, Bin; Yuan, Chao; Ma, Xiaohua; Hao, Yue

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Research Directions