Toshiro Hiramoto - Publications, H-index & Citations

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Toshiro Hiramoto

The University of Tokyo

42H-index

634Paper Count

7.1KCitation Count

Published Papers 32

Publication Date

An Improved Graphical Method for Layout Optimization of Field-Limiting Ring Edge Termination

IEEE Transactions on Electron Devices

IF3.2

2026-06-10

PREAI

Kiyoshi Takeuchi; Munetoshi Fukui; Takuya Saraya; Kazuo Itou; Toshihiko Takakura; Shinichi Suzuki; Hiroyuki Takase; Toshiro Hiramoto

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A simulation study on the operating principle of field-limiting ring edge termination using a quasi-2D three-terminal model

Japanese Journal of Applied Physics

IF1.8

2025-12-01

PREAI

Takeuchi, Kiyoshi; Fukui, Munetoshi; Saraya, Takuya; Itou, Kazuo; Takakura, Toshihiko; Suzuki, Shinichi; Takase, Hiroyuki; Hiramoto, Toshiro

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Reliability improvement of InGaOx FETs by adding Zn in atomic layer deposition process

Japanese Journal of Applied Physics

IF1.8

2025-10-01

PREAI

Sakai, Kota; Hikake, Kaito; Kim, Sung-hun; Itoya, Yuki; Saraya, Takuya; Hiramoto, Toshiro; Kobayashi, Masaharu

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Boosted gate MOS (BGMOS): Device/circuit cooperation scheme to achieve leakage-free giga-scale integration

proceedings of the ieee

IF0

2024-09-06

PREAI

Inukai, T; Takamiya, M; Nose, K; Kawaguchi, H; Hiramoto, T; Sakurai, T

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Mesoscopic-scale grain formation in HfO2-based ferroelectric thin films and its impact on electrical characteristics

NANO CONVERGENCE

IF11

2022-11-12

OAAI

Kobayashi, Masaharu; Wu, Jixuan; Sawabe, Yoshiki; Takuya, Saraya; Hiramoto, Toshiro

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On the thickness dependence of the polarization switching kinetics in HfO2-based ferroelectric

APPLIED PHYSICS LETTERS

IF3.6

2022-08-23

OAAI

Sawabe, Yoshiki; Saraya, Takuya; Hiramoto, Toshiro; Su, Chun-Jung; Hu, Vita Pi-Ho; Kobayashi, Masaharu

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Reconfigurable Multivalue Logic Functions of a Silicon Ellipsoidal Quantum-Dot Transistor Operating at Room Temperature

ACS NANO

IF16

2021-10-21

PREAI

Lee, Youngmin; Lee, Jin Woo; Lee, Sejoon; Hiramoto, Toshiro; Wang, Kang L.

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A first-principles study on ferroelectric phase formation of Si-doped HfO2 through nucleation and phase transition in thermal process

APPLIED PHYSICS LETTERS

IF3.6

2020-12-21

PREAI

Wu, Jixuan; Mo, Fei; Saraya, Takuya; Hiramoto, Toshiro; Kobayashi, Masaharu

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Five nanometre CMOS technology

NATURE ELECTRONICS

IF40.9

2019-12-06

PREAI

Hiramoto, Toshiro

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Au/SiO2 Hybrid Bonding with 6-μm- Pitch Au Electrodes for 3D Structured Image Sensors

SEMICONDUCTOR WAFER BONDING: SCIENCE, TECHNOLOGY AND APPLICATIONS 14

IF0

2016-08-24

PREAI

Honda, Yuki; Hagiwara, Kei; Goto, Masahide; Watabe, Toshihisa; Nanba, Masakazu; Iguchi, Yoshinori; Saraya, Takuya; Kobayashi, Masaharu; Toshiyoshi, Hiroshi; Higurashi, Eiji; Hiramoto, Toshiro

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Observation of Single Electron Transport via Multiple Quantum States of a Silicon Quantum Dot at Room Temperature

NANO LETTERS

IF9.1

2013-12-17

PREAI

Lee, Sejoon; Lee, Youngmin; Song, Emil B.; Hiramoto, Toshiro

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Modulation of peak-to-valley current ratio of Coulomb blockade oscillations in Si single hole transistors

APPLIED PHYSICS LETTERS

IF3.6

2013-09-04

PREAI

Lee, Sejoon; Lee, Youngmin; Song, Emil B.; Hiramoto, Toshiro

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Nonvolatile three-terminal operation based on oxygen vacancy drift in a Pt/Ta2O5-x/Pt, Pt structure

APPLIED PHYSICS LETTERS

IF3.6

2013-06-10

PREAI

Wang, Qi; Itoh, Yaomi; Hasegawa, Tsuyoshi; Tsuruoka, Tohru; Yamaguchi, Shu; Watanabe, Satoshi; Hiramoto, Toshiro; Aono, Masakazu

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Gate-tunable selective operation of single electron/hole transistor modes in a silicon single quantum dot at room temperature

APPLIED PHYSICS LETTERS

IF3.6

2013-02-25

PREAI

Lee, Sejoon; Lee, Youngmin; Song, Emil B.; Wang, Kang L.; Hiramoto, Toshiro

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Nanoelectronics Research for Beyond CMOS Information Processing

PROCEEDINGS OF THE IEEE

IF25.9

2010-12-01

PREAI

Bourianoff, George; Brillouet, Michel; Cavin, Ralph K., III; Hiramoto, Toshiro; Hutchby, James A.; Ionescu, Adrian M.; Uchida, Ken

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Regional, National, and International Nanoelectronics Research Programs: Topical Concentration and Gaps

PROCEEDINGS OF THE IEEE

IF25.9

2010-12-01

PREAI

Brillouet, Michel; Bourianoff, George I.; Cavin, Ralph Keary, III; Hiramoto, Toshiro; Hutchby, James A.; Ionescu, Adrian M.; Uchida, Ken

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Strong dependence of tunneling transport properties on overdriving voltage for room-temperature-operating single electron/hole transistors formed with ultranarrow [100] silicon nanowire channel

APPLIED PHYSICS LETTERS

IF3.6

2008-07-30

PREAI

Lee, Sejoon; Hiramoto, Toshiro

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Extremely high flexibilities of Coulomb blockade and negative differential conductance oscillations in room-temperature-operating silicon single hole transistor

APPLIED PHYSICS LETTERS

IF3.6

2008-02-20

PREAI

Lee, Sejoon; Miyaji, Kousuke; Kobayashi, Masaharu; Hiramoto, Toshiro

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Control of full width at half maximum of Coulomb oscillation in silicon single-hole transistors at room temperature

APPLIED PHYSICS LETTERS

IF3.6

2007-08-02

PREAI

Miyaji, Kousuke; Hiramoto, Toshiro

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Voltage gain dependence of the negative differential conductance width in silicon single-hole transistors

APPLIED PHYSICS LETTERS

IF3.6

2006-04-03

PREAI

Miyaji, K; Saitoh, M; Hiramoto, T

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Research Directions