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SaveShare Save Share Save Chemical vapor deposition of compound semiconductors: process simulation and experimental validation
Kangawa, Yoshihiro; Kusaba, Akira; Akiyama, Toru; Nitta, Shugo; Iwaya, Motoaki; Miyake, Hideto; Kempisty, Pawel; Chabowska, Marta A.; Popova, Hristina; Zaluska-Kotur, Magdalena A. Share Save Share Save Share Save Share Save Impact of growth temperature on heterostructure interface steepness in ultraviolet-B AlGaN-based laser diodesSaito, Takumu; Miyake, Rintaro; Yamada, Ryoya; Imoto, Yoshinori; Maruyama, Shundai; Sasaki, Yusuke; Karino, Shogo; Iwayama, Sho; Miyake, Hideto; Naniwae, Koichi; Kamiyama, Satoshi; Takeuchi, Tetsuya; Iwaya, Motoaki Share Save Analysis of inversion-domain boundaries in four-layer polarity-inverted AlN structureTamano, Tomohiro; Shojiki, Kanako; Akiyama, Toru; Akaike, Ryota; Nakamura, Takao; Honda, Hiroto; Sato, Eiki; Uemukai, Masahiro; Tanikawa, Tomoyuki; Katayama, Ryuji; Miyake, Hideto Share Save Share Save Share Save Demonstration of ultraviolet-B AlGaN-based laser diode operation with a peak light output power of 150 mW by improving injection efficiency through polarization charge modulationKondo, Ryosuke; Yabutani, Ayumu; Omori, Tomoya; Yamada, Kazuki; Matsubara, Eri; Hasegawa, Ryota; Nishibayashi, Toma; Iwayama, Sho; Takeuchi, Tetsuya; Kamiyama, Satoshi; Miyake, Hideto; Iwaya, Motoaki Share Save Molecular beam homoepitaxy of N-polar AlN: Enabling role of aluminum-assisted surface cleaningZhang, Zexuan; Hayashi, Yusuke; Tohei, Tetsuya; Sakai, Akira; Protasenko, Vladimir; Singhal, Jashan; Miyake, Hideto; Xing, Huili Grace; Jena, Debdeep; Cho, YongJin Share Save Share Save Share Save Share Save AlGaN-based UV-B laser diode with a high optical confinement factorTanaka, Shunya; Ogino, Yuya; Yamada, Kazuki; Omori, Tomoya; Ogura, Reo; Teramura, Shohei; Shimokawa, Moe; Ishizuka, Sayaka; Yabutani, Ayumu; Iwayama, Sho; Sato, Kosuke; Miyake, Hideto; Iwaya, Motoaki; Takeuchi, Tetsuya; Kamiyama, Satoshi; Akasaki, Isamu Share Save Share Save Individually resolved luminescence from closely stacked GaN/AlN quantum wellsSheng, Bowen; Schmidt, Gordon; Bertram, Frank; Veit, Peter; Wang, Yixin; Wang, Tao; Rong, Xin; Chen, Zhaoying; Wang, Ping; Blasing, Juergen; Miyake, Hideto; Li, Hongwei; Guo, Shiping; Qin, Zhixin; Strittmatter, Andre; Shen, Bo; Christen, Juergen; Wang, Xinqiang Share Save Share Save 
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