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D

Debdeep Jena

cornell university

66H-index
571Paper Count
1.8WCitation Count
Published Papers 159
Publication Date
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Momentum space imaging reveals chemical gating of 2D electron and hole gases in nitride heterostructures
errCommunications Materials
IF9.6
err2026-05-31
err0
errOAAI
errE. Della Valle; T.-S. Nguyen; Z. Zhang; Z. He; N. Pieczulewski; P. Constantinou; C. Chang; T. Schmitt; H. G. Xing; D. A. Muller; G. Khalsa; D. Jena; V. N. Strocov
errShare
errSave
GaN lateral pn junctions by MBE in situ selective area sublimation and regrowth
errJOURNAL OF VACUUM SCIENCE & TECHNOLOGY A
IF2.1
err2026-05-01
err0
PREAI
errMurarka, Hardik; Arora, Jayeesh; Ramesh, Madhav; Nguyen, Thai-Son; Bhattacharya, Debaditya; Smith, Kathleen; Savant, Chandrashekhar; Encomendero, Jimy; Protasenko, Vladimir; Xing, Huili Grace; Jena, Debdeep
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errSave
Growth, electron transport, and transistors of N-polar distributed polarization-doped AlGaN channel on single-crystal AlN substrates
errJournal of Applied Physics
IF2.5
err2026-04-28
err0
PREAI
errKim, Eungkyun; Yu, Changkai; Singhal, Jashan; Zhang, Zexuan; Jena, Debdeep; Xing, Huili Grace
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errSave
Ultra-Wide Bandgap AlN/AlGaN/AlN-on-SiC HEMT With Record-High Thermal Performance
errIEEE Electron Device Letters
IF4.5
err2026-04-20
err0
PREAI
errSeokjun Kim; Eungkyun Kim; Jashan Singhal; Jimy Encomendero; Debdeep Jena; Huili Grace Xing; Sukwon Choi
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errSave
High-mobility holes in gallium nitride and their quantum oscillations
errNature Electronics
IF40.9
err2026-03-23
err0
PREAI
errChuan F. C. Chang; Joseph E. Dill; Zexuan Zhang; Jie-Cheng Chen; Naomi Pieczulewski; Samuel J. Bader; Oscar E. Ayala Valenzuela; Scott A. Crooker; Fedor F. Balakirev; Ross D. McDonald; Jimy Encomendero; David A. Muller; Feliciano Giustino; Debdeep Jena; Huili Grace Xing
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errSave
High mobility multiple-channel AlScN/GaN heterostructures
errJournal of Applied Physics
IF2.5
err2026-02-21
err1
PREAI
errAsteris, Aias; Nguyen, Thai-Son; Chang, Chuan F. C.; Savant, Chandrashekhar; Lonergan, Pierce; Xing, Huili G.; Jena, Debdeep
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errSave
Dielectric assisted liftoff enabled simultaneous low n- and p- differential contact resistivities in ultrawide bandgap AlGaN pn diodes on bulk AlN
errJapanese Journal of Applied Physics
IF1.8
err2026-02-16
err1
PREAI
errBhattacharya, Debaditya; Agrawal, Shivali; Huang, Hsin-Wei S.; Ramesh, Madhav; Dill, Joseph E.; Protasenko, Vladimir; Xing, Huili Grace; Jena, Debdeep
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errSave
Quantum limits of ballistic electrical and thermal resistances of semiconductors
errAIP Advances
IF1.4
err2026-02-01
err0
PREAI
errHo, Alice; Singhal, Jashan; Akinwande, Deji; Xing, Huili G.; Jena, Debdeep
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errSave
Epitaxial high-K barrier AlBN/GaN HEMTs
errAPPLIED PHYSICS LETTERS
IF3.6
err2025-03-01
err0
PREAI
errSavant, Chandrashekhar; Nguyen, Thai-Son; Vishwakarma, Saurabh; Nomoto, Kazuki; Ma, Siyuan; Dhar, Akshey; Chen, Yu-Hsin; Casamento, Joseph; Smith, David J.; Xing, Huili Grace; Jena, Debdeep
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errSave
The quantum limits of contact resistance and ballistic transport in 2D transistors
errNATURE ELECTRONICS
IF40.9
err2025-02-07
err0
PREAI
errAkinwande, D; Biswas, C; Jena, D
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errSave
In situ etching of β-Ga2O3 using tert-butyl chloride in an MOCVD system
errAPPLIED PHYSICS LETTERS
IF3.6
err2024-12-10
err1
PREAI
errGorsak, Cameron A.; Bowman, Henry J.; Gann, Katie R.; Buontempo, Joshua T.; Smith, Kathleen T.; Tripathi, Pushpanshu; Steele, Jacob; Jena, Debdeep; Schlom, Darrell G.; Xing, Huili Grace; Thompson, Michael O.; Nair, Hari P.
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errSave
Polarization-induced two-dimensional hole gases in N-polar AlGaN/GaN heterostructures
errAPPLIED PHYSICS LETTERS
IF3.6
err2024-12-02
err0
PREAI
errYu, Changkai; Zhang, Zexuan; Jena, Debdeep; Xing, Huili Grace; Cho, Yongjin
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errSave
Self-activated epitaxial growth of ScN films from molecular nitrogen at low temperatures
errAPL MATERIALS
IF4.5
err2024-11-06
err0
errOAAI
errSavant, Chandrashekhar P.; Verma, Anita; Nguyen, Thai-Son; van Deurzen, Len; Chen, Yu-Hsin; He, Zhiren; Rezaie, Salva S.; Gollwitzer, Jakob; Gregory, Benjamin; Sarker, Suchismita; Ruff, Jacob; Khalsa, Guru; Singer, Andrej; Muller, David A.; Xing, Huili G.; Jena, Debdeep; Casamento, Joseph
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errSave
Lattice-matched multiple channel AlScN/GaN heterostructures
errAPL MATERIALS
IF4.5
err2024-10-24
err3
errOAAI
errNguyen, Thai-Son; Pieczulewski, Naomi; Savant, Chandrashekhar; Cooper, Joshua J. P.; Casamento, Joseph; Goldman, Rachel S.; Muller, David A.; Xing, Huili G.; Jena, Debdeep
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errSave
High conductivity coherently strained quantum well XHEMT heterostructures on AlN substrates with delta doping
errAPPLIED PHYSICS LETTERS
IF3.6
err2024-10-03
err1
PREAI
errChen, Yu-Hsin; Encomendero, Jimy; Savant, Chandrashekhar; Protasenko, Vladimir; Xing, Huili (Grace); Jena, Debdeep
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errSave
Ferroelectric AlBN films by molecular beam epitaxy
errAPPLIED PHYSICS LETTERS
IF3.6
err2024-08-12
err3
errOAAI
errSavant, Chandrashekhar; Gund, Ved; Nomoto, Kazuki; Maeda, Takuya; Jadhav, Shubham; Lee, Joongwon; Ramesh, Madhav; Kim, Eungkyun; Nguyen, Thai-Son; Chen, Yu-Hsin; Casamento, Joseph; Rana, Farhan; Lal, Amit; Xing, Huili Grace; Jena, Debdeep
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errSave
Measurement of spin-polarized photoemission from wurtzite and zinc blende gallium nitride photocathodes
errAPPLIED PHYSICS LETTERS
IF3.6
err2024-07-18
err1
errOAAI
errLevenson, S. J.; Andorf, M. B.; Dickensheets, B. D.; Bazarov, I. V.; Galdi, A.; Encomendero, J.; Protasenko, V. V.; Jena, D.; Xing, H. G.; Maxson, J. M.
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errSave
Electron mobility enhancement by electric field engineering of AlN/GaN/AlN quantum-well HEMTs on single-crystal AlN substrates
errAPPLIED PHYSICS LETTERS
IF3.6
err2024-04-10
err7
errOAAI
errChen, Yu-Hsin; Encomendero, Jimy; Savant, Chandrashekhar; Protasenko, Vladimir; Xing, Huili (Grace); Jena, Debdeep
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errSave
Epitaxial growth of α-(AlxGa1-x)2O3 by suboxide molecular-beam epitaxy at 1 μm/h
errAPL MATERIALS
IF4.5
err2024-04-10
err4
errOAAI
errSteele, Jacob; Azizie, Kathy; Pieczulewski, Naomi; Kim, Yunjo; Mou, Shin; Asel, Thaddeus J.; Neal, Adam T.; Jena, Debdeep; Xing, Huili G.; Muller, David A.; Onuma, Takeyoshi; Schlom, Darrell G.
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errSave
Accumulation and removal of Si impurities on β-Ga2O3 arising from ambient air exposure
errAPPLIED PHYSICS LETTERS
IF3.6
err2024-03-11
err6
PREAI
errMcCandless, J. P.; Gorsak, C. A.; Protasenko, V.; Schlom, D. G.; Thompson, Michael O.; Xing, H. G.; Jena, D.; Nair, H. P.
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errSave

Research Directions

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Co-authors
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