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SaveP-Type Electrical Activation in GaN by Mg Ion Implantation for PN Junctions
Wang, Zheming; Wu, Zengyuan; Li, Fangzhi; Tang, Xi; Yin, Yulian; Zhang, Li; Zhang, Xuan; Yu, Guohao; Zeng, Zhongming; Zhang, Chunyu; Liu, Jianping; Cai, Yong; Zhang, Baoshun Share Save GaN high electron mobility transistors with a breakdown voltage over 2500 V achieved by low temperature MBE growth, subdivision of channel, and single field plate structureYang, Zhichao; Liao, Eason; Ding, Daniel; Zhuang, Jungang; Dong, Hao; Yang, Han; Zhu, Lei; Zhang, Bingliang; Yu, Guohao; Zeng, Zhongming; Zhang, Baoshun Share Save Share Save Share Save Numerical study of terahertz radiation from N-polar AlGaN/GaN HEMT under asymmetric boundariesXing, Runxian; Guo, Hongyang; Guo, Bohan; Yu, Guohao; Zhang, Ping; Zhou, Jia'an; Yang, An; Li, Yu; Hao, Chunfeng; Yue, Huixin; Zeng, Zhongming; Zhang, Xinping; Zhang, Baoshun Share Save Share Save Improved threshold voltage stability for GaN p-channel field effect transistors by hydrogen plasma treatmentYue, Huixin; Yu, Guohao; Guo, Bohan; Li, Yu; Li, Ang; Lu, Shaoqian; Zhou, Jiaan; Xing, Runxian; Yang, An; Hao, Chunfeng; Jiang, Jinxia; Zhang, Yuxiang; Cai, Yong; Zeng, Zhongming; Zhang, Baoshun Share Save Enhanced luminescence efficiency in GaN-based blue laser diodes by H plasma technologyWang, Lu; Xu, Kun; Yu, Guohao; Ren, Xiaoyu; Qin, Xulei; Zhang, Li; Chen, Tiwei; Zhang, Fan; Li, Fangzhi; Zhou, Jiaan; Xue, Bangda; Zeng, Zhongming; Liu, Jianping; Zhang, Baoshun Share Save High-performance GaN metal-insulator-semiconductor high electron mobility transistors (MIS-HEMTs) using Sc0.2Al0.8N/SiNX as composite gate dielectricHuang, Qizhi; Deng, Xuguang; Zhang, Li; Lin, Wenkui; Cheng, Wei; Yu, Guohao; Ju, Tao; Mudiyanselage, Dinusha Herath; Wang, Dawei; Fu, Houqiang; Zeng, Zhongming; Zhang, Baoshun; Xu, Feng Share Save Share Save Improved Gate Stability of Metal-Insulator-Semiconductor-High-Electron-Mobility Transistors with 10 nm Atomic Layer Deposition Al2O3 by Tetramethylammonium Hydroxide Wet TreatmentLi, Yu; Zhou, Jiaan; Xing, Runxian; Lu, Shaoqian; Yang, An; Guo, Bohan; Liu, Bosen; Du, Zhongkai; Yu, Guohao; Zeng, Zhongming; Cai, Yong; Zhang, Baoshun Share Save Polarization Properties in AlGaN/GaN HEMT-Array with a Shifted GateXing, Runxian; Zhang, Ping; Guo, Hongyang; Yu, Guohao; Zhou, Jiaan; Yang, An; Dai, Shige; Zeng, Zhongming; Zhang, Xingping; Zhang, Baoshun Share Save Share Save Gate leakage mechanisms of the AlGaN/GaN HEMT with fluorinated graphene passivationDing, Xiaoyu; Song, Liang; Yu, Guohao; Cai, Yong; Sun, Yuhua; Zhang, Bingliang; Du, Zhongkai; Zeng, Zhongming; Zhang, Xinping; Zhang, Baoshun Share Save Comparative Analysis of the GaN Nonpolar Plane Morphology by Wet Treatment and Its Effect on Electrical Properties in Trench MOSFETZhou, Jiaan; Tang, Wenxin; Ju, Tao; Wang, Heng; Yu, Guohao; Zhou, Xin; Zhang, Li; Xu, Kun; Zhang, Xuan; Zeng, Zhongming; Zhang, Xinping; Zhang, Baoshun Share Save Low leakage current in isolated AlGaN/GaN heterostructure on Si substrate by N ion implantation performed at an elevated temperatureWang, Zheming; Yu, Guohao; Yuan, Xu; Deng, Xuguang; Zhang, Li; Dai, Shige; Yang, Guang; Zhang, Liguo; Ji, Rongkun; Kan, Xiang; Zhang, Xuan; Fu, Houqiang; Zeng, Zhongming; Wong, Roy K. -Y.; Cai, Yong; Zhang, Baoshun Share Save Share Save Share Save High quality of N-polar GaN film fabricated by layer transfer technology using high selective material removal rate of CMPYu, Zicheng; Zhang, Li; Yu, Guohao; Deng, Xuguang; Jiang, Chunyu; Tang, Wenxin; Yin, Haotian; Liu, Weining; Chen, Zhang; Zhang, Baoshun Share Save 
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