Yue Hao - Publications, H-index & Citations

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Yue Hao

xidian university

57H-index

1.3KPaper Count

1.7WCitation Count

Published Papers 338

Publication Date

Enhanced High-Temperature Performance of In-Situ SiN GaN MIS-HEMTs With an AlN Back Barrier Up to 500 °C

IEEE Transactions on Electron Devices

IF3.2

2026-07-09

PREAI

Xuejing Sun; Xiufeng Song; Longyang Yu; Linhuan Gao; Junchun Bai; Bin Cheng; Juan Gui; Ga Zhang; Shengrui Xu; Yinhe Wu; Shuzhen You; Yachao Zhang; Ming Xiao; Shenglei Zhao; Yue Hao; Jincheng Zhang

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Crosstalk-Mapping Digital Predistortion for Fully Connected Hybrid Beamforming MIMO Transmitters Using Piecewise Approximate Vector Synthesis

IEEE Transactions on Microwave Theory and Techniques

IF4.5

2026-06-15

PREAI

Qihao Shi; Xin Liu; Huanhuan Jia; Tong Shen; Jiahua Li; Chen Long; Xianzhen Lu; Yang Lu; Ziyue Zhao; Chupeng Yi; Ting Feng; Lang Tong; Hailong Wang; Wenhua Chen; Xiaohua Ma; Yue Hao

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Photonic Spiking Graph Neural Network for Energy-Efficient Structured Data Processing

Journal of Lightwave Technology

IF4.8

2026-06-12

PREAI

Wanting Yu; Shuiying Xiang; Xingxing Guo; Shangxuan Shi; Haowen Zhao; Xintao Zeng; Yahui Zhang; Hongbo Jiang; Yue Hao

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Breakdown Mechanisms of Vertical GaN Junction Field-Effect Transistors and Enhanced Figure of Merit Using Gradient Doping Channel

IEEE Transactions on Electron Devices

IF3.2

2026-06-02

PREAI

Daoyuan Li; Shenglei Zhao; Xiufeng Song; Naixuan Wang; Longyang Yu; Juan Gui; Ga Zhang; Xuejing Sun; Yichen Zhang; Linhuan Gao; Yue Hao; Jincheng Zhang

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High Power Density Millimeter-Wave Ultra-Thin InGaN Channel DH-HEMTs

IEEE Electron Device Letters

IF4.5

2026-05-28

PREAI

Hao Lu; Bin Hou; Ling Yang; Longge Deng; Meng Zhang; Mei Wu; Kai Cheng; Xiaohua Ma; Yue Hao

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Ultrafast and Sensitive NiO/Ga2O3 Lateral Superjunction Photodetectors for Solar-Blind Ultraviolet Detection

IEEE Electron Device Letters

IF4.5

2026-05-25

PREAI

Xiaoxi Li; Yang Zhou; Zhifan Wu; Yu Wang; Shuqi Huang; Cizhe Fang; Xiangyu Zeng; Haoji Qian; Chengji Jin; Jiajia Chen; Xiang Zheng; Yan Liu; Yue Hao; Genquan Han

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Hybrid p-n Junction/Ohmic Gate p-GaN HEMT With Enhanced Threshold Voltage Stability and Large Gate Swing

IEEE Electron Device Letters

IF4.5

2026-05-25

PREAI

Kuo Zhang; Kai Liu; Chong Wang; Yuhan Luo; Jiahui Ren; Wentao Zhang; Yunlong He; Xuefeng Zheng; Xiaohua Ma; Yue Hao

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High-PAE Gold-Free AlGaN/GaN HEMT With Al–Si Alloy Gate Fabrication Process for 5G Applications

IEEE Transactions on Electron Devices

IF3.2

2026-05-12

PREAI

Long Chen; Hao Lu; Longge Deng; Yuechao Du; Mengqi Liu; Ling Yang; Bin Hou; Meng Zhang; Mei Wu; Xiaohua Ma; Yue Hao

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Implications for FD-OSIQ-Based Electrothermal Co-Design: Degradation of Reverse Performance in <italic>β</italic>-Ga2O3 Ferroelectric Trench Diodes Under Forward-Voltage Stress

IEEE Transactions on Electron Devices

IF3.2

2026-05-08

PREAI

Yuan Li; Danning Tang; Yitong Yang; Jiayue Yang; Xiaohua Ma; Yuanfu Zhao; Yue Hao

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4.3-kV Fully Vertical <italic>β</italic>-Ga2O3 Heterojunction Barrier Schottky Diode With Sputtered p-GaN

IEEE Transactions on Electron Devices

IF3.2

2026-05-08

PREAI

Qingyuan Chang; Ling Yang; Bin Hou; Mao Jia; Youjun Zhu; Mei Wu; Meng Zhang; Qing Zhu; Hao Lu; Xichen Wang; Chunzhou Shi; Jiale Du; Qian Yu; Mengdi Li; Xiaohua Ma; Yue Hao

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Investigation on the Single-Event Burnout Mechanism and Hardening Design in p-GaN Gate AlGaN/GaN HEMTs

IEEE Transactions on Electron Devices

IF3.2

2026-05-05

PREAI

Danmei Lin; Xuefeng Zheng; Xiaohu Wang; Longbing Yi; Rui Han; Kai Liu; Hao Zhang; Yingzhe Wang; Xiaohua Ma; Yue Hao

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High-Power Wide-Dynamic-Range GaN Rectifier Using Diode-Topology Impedance Compression

IEEE Microwave and Wireless Technology Letters

IF3.4

2026-05-01

PREAI

Min, Xianghao; Xiao, Ming; Song, Xiufeng; Zhang, Zhengxing; Zheng, Menghan; Xiang, Mengjiao; Zhou, Hong; Dang, Kui; Zhang, Jincheng; Hao, Yue

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A Grouped Sorting Queue Supporting Dynamic Updates for Timer Management in High-Speed Network Interface Cards

IEEE Transactions on Computers

IF3.8

2026-04-30

PREAI

Zekun Wang; Binghao Yue; Weitao Pan; Jiangyi Shi; Yue Hao

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BV > 3 kV and Low Turn-On Voltage <italic>β</italic>-Ga2O3 Vertical Schottky Barrier Diodes With PIN Edge Termination

IEEE Transactions on Electron Devices

IF3.2

2026-04-30

PREAI

Pengfei Dong; Anqi Ye; Jianghan Zhao; Na Sun; Min Zhou; Sami Alghamdi; Jiandong Ye; Weihang Zhang; Zhihong Liu; Chunfu Zhang; Jincheng Zhang; Hong Zhou; Yue Hao

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Analytical Model on the Threshold Voltage of Charge-Trap-Based Hybrid Gate-Stack GaN MIS-HEMT

IEEE Transactions on Electron Devices

IF3.2

2026-04-27

PREAI

Tianqi Pan; Bin Hou; Ling Yang; Jiale Du; Kaiwen Chen; Yifan Chen; Hailin Liu; Mei Wu; Meng Zhang; Hao Lu; Mao Jia; Xiaohua Ma; Yue Hao

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Study on the Single-Event Burnout Mechanism of Ka-Band GaN MMIC Power Amplifiers Under Heavy Ion Irradiation

IEEE Transactions on Electron Devices

IF3.2

2026-04-14

PREAI

Li Zhang; Xuefeng Zheng; Danmei Lin; Hao Zhang; Xiaohu Wang; Kang Li; Shunyu Wang; Fang Zhang; Yingzhe Wang; Peipei Hu; Jie Liu; Xiaohua Ma; Yue Hao

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A >2.5 kV, 93 ps GaN Diode Avalanche Shaper With 1.68 GW/cm2 Peak Power Density

IEEE Electron Device Letters

IF4.5

2026-04-08

PREAI

Zhiqing Yang; Ming Xiao; Yuhao Zhang; Zihan Lin; Xi Liu; Kui Dang; Xiufeng Song; Shenglei Zhao; Kai Su; Zeyang Ren; Jinfeng Zhang; Yue Hao; Jincheng Zhang

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Analysis of Gate Leakage Mechanism in AlGaN/GaN HEMTs With PECVD and ICPCVD/PECVD SiN Passivation Considering the Varying Electric Field in GaN Cap Layer

IEEE Transactions on Electron Devices

IF3.2

2026-04-03

PREAI

Yuxi Zhou; Jiejie Zhu; Mingchen Zhang; Mengdi Li; Lingjie Qin; Bowen Zhang; Yan Chen; Shuo Wang; Yuchen Qian; Gaopeng Huang; Yue Hao; Xiaohua Ma

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Novel PCB-Embedded Inductor Structure for Resonant Switched-Capacitor Converters

IEEE Transactions on Industrial Electronics

IF7.2

2026-03-19