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D

Daewon Ha

samsung electronics

25H指数
146论文数
2.9K被引数
收录论文 31
发表时间
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Simultaneous Enhancement of Performance and Stability in Dual-Gate a-IGZO Thin-Film Transistors via Single-Step Laser Annealing for Capacitor-Less DRAM通过单步激光退火实现无电容DRAM用双栅a-IGZO薄膜晶体管性能与稳定性的同步提升
errAdvanced Functional Materials
IF19
err2026-07-31
err0
errOAAI
errSihyeon Kwon; Junil Kim; Geuntae Park; Minseok Kim; Woohyun Hwang; Wanki Kim; Daewon Ha; Byeongmoon Lee; Jae Eun Jang; Hyuk-Jun Kwon
err分享
err收藏
Ionic Field-Effect Transistor Achieving Large Memory Window and Enhanced Retention via Ultrathin Ozone-Oxidized Barrier Layer通过超薄臭氧氧化阻挡层实现大存储窗口和增强存储保持性的离子场效应晶体管
errIEEE Electron Device Letters
IF4.5
err2026-06-12
err0
PREAI
errJongseon Seo; Geonhui Han; Laeyong Jung; Junghoon Park; Jongho Park; Suhwan Lim; Wanki Kim; Daewon Ha; Hyunsang Hwang
err分享
err收藏
Hybrid ferroelectric-ionic memristive hardware for high scalability in-memory computing铁电-离子混合忆阻器硬件用于高可扩展性存内计算
errNature Communications
IF15.7
err2026-05-21
err0
errOAAI
errJeong-Han Kim; Wonjun Shin; Ryun-Han Koo; Jangsaeng Kim; Eugene Park; Piush Behera; Sojin Kim; Jinseok Hong; Feras Al-Dirini; Been Kwak; Jiwon You; Jiseong Im; Dooyong Koh; Yejin Hong; Qinyuan Xue; Hyun-Min Kim; Hyunho Seok; Youngchan Cho; Hwiin Ju; Wooje Jung; Kyunghwan Lee; Daewon Ha; Jong-Ho Lee; Seung-Yong Lee; Deok-Hwang Kwon; Frances M. Ross; Youngho Kang; Suraj S. Cheema; Daewoong Kwon
err分享
err收藏
Crystalline IGO TFTs With High Reliability Under DRAM-Compatible 600 °C N2 Thermal Budgets在DRAM兼容的600°C N₂热预算下具有高可靠性的结晶态IGO TFTs
errIEEE Electron Device Letters
IF4.5
err2026-03-19
err0
PREAI
errJeong Eun Oh; Nahyun Kim; Jiwon Chae; Min Hee Cho; Daewon Ha; Jae Kyeong Jeong
err分享
err收藏
A Novel Ferroelectric NAND Cell Structure Featuring Ultrathin IGZO Charge Trap Layer for Superior Endurance and Retention新型铁电NAND单元结构，具有超薄IGZO电荷捕获层，以实现卓越的耐久性和保持性
errIEEE Transactions on Electron Devices
IF3.2
err2026-02-11
err0
PREAI
errHyunjun Kang; Hongrae Joh; Junhyeok Kwak; Giuk Kim; Hyojun Choi; Hoon Kim; Sanghyun Park; Kwangyou Seo; Kwangsoo Kim; Wanki Kim; Daewon Ha; Jinho Ahn; Sanghun Jeon
err分享
err收藏
Experiments and Modeling of Defect Dynamics and BTI Behavior in Doped InO TFTs During 400 °C Postprocessing Forming Gas Annealing在掺杂InO TFTs于400 °C后处理形成气体退火期间的缺陷动力学和BTI行为的实验与建模
errIEEE Transactions on Electron Devices
IF3.2
err2026-02-04
err0
PREAI
errYu-Hsin Kuo; Chengyang Zhang; Priyankka Ravikumar; Sanghyun Kang; Taeyoung Song; Marco Villena; Luca Larcher; Hwan Kim; Minji Hong; Pilsang Yun; Gaurav Thareja; Shimeng Yu; Daewon Ha; Suman Datta; Julia Medvedeva; Asif Khan
err分享
err收藏
Erase-Verify Operation in Ferroelectric 3D Vertical NAND Storage
errIEEE Electron Device Letters
IF4.5
err2025-12-05
err0
PREAI
errShubham Kumar; Saikat Chakraborty; Yixin Qin; Moonyoung Jung; Kwangyou Seo; Kwangsoo Kim; Wanki Kim; Daewon Ha; Vijaykrishnan Narayanan; Jaydeep P. Kulkarni; Kai Ni
err分享
err收藏
Ferroelectric transistors for low-power NAND flash memory铁电晶体管用于低功耗NAND闪存
errNature
IF48.5
err2025-11-26
err0
PREAI
errSijung Yoo; Taek Jung Kim; Seung-Geol Nam; Donghoon Kim; Kihong Kim; Yunseong Lee; Moonil Jung; Kwang-Hee Lee; Seokhoon Choi; Seung Dam Hyun; Min-Hyun Lee; Seogwoo Hong; Haesung Kim; Ki Deok Bae; Hyangsook Lee; Jung Yeon Won; Dong-Jin Yun; Byeong Gyu Chae; Wook Ghee Hahn; Chang Hyun Joo; Sanghyun Jo; Yoonsang Park; Kyung Mee Song; Kyooho Jung; Suhwan Lim; Kwangyou Seo; Kwangsoo Kim; Wanki Kim; Daewon Ha; Jee-Eun Yang; Seung-Yeul Yang; Sangwook Kim; Jinseong Heo; Duk-Hyun Choe
err分享
err收藏
Laminated Ferroelectric Stack for Enhanced ISPP Slope and Endurance in FE-NAND层叠铁电堆用于增强FE-NAND的ISPP斜率和耐久性
errIEEE Electron Device Letters
IF4.5
err2025-11-03
err0
PREAI
errHyun Jae Lee; Minji Sohn; Sijung Yoo; Yunseong Lee; Kihong Kim; Seung-Geol Nam; Yoonsang Park; Sanghyun Jo; Donghoon Kim; Jinseong Heo; Wanki Kim; Daewon Ha; Asif Khan; Shimeng Yu; Duk-Hyun Choe; Suman Datta
err分享
err收藏
Pushing the limits of NAND technology scaling with ferroelectrics利用铁电材料推动NAND技术缩放的极限
errMRS Bulletin
IF4.9
err2025-10-06
err0
errOAAI
errPrasanna Venkatesan; Lance Fernandes; Sanghyun Kang; Priyankka Ravikumar; Taeyoung Song; Chinsung Park; Dipjyoti Das; Kijoon H. P. Kim; Kwangyou Seo; Kwangsoo Kim; Kai Ni; Andrea Padovani; Mahendra Pakala; Luca Larcher; Gaurav Thareja; Wanki Kim; Daewon Ha; Asif Khan
err分享
err收藏
Stabilized Negative Capacitance for Near-Theoretical Efficiency and High Reliability in Charge Trap Flash Memory稳定化负电容效应用于实现近理论效率和高可靠性在电荷俘获闪存中
errMaterials Today Physics
IF9.7
err2025-09-19
err0
PREAI
errSangho Lee; Giuk Kim; Yunseok Nam; Yangjin Jeong; Hyunjun Kang; Woongjin Kim; Hunbeom Shin; Mincheol Shin; Sanghyun Park; Kwangyou Seo; Kwangsoo Kim; Wanki Kim; Daewon Ha; Jinho Ahn; Sanghun Jeon
err分享
err收藏
Gate stack engineering of two-dimensional transistors二维晶体管的栅极堆叠工程
errNature Electronics
IF40.9
err2025-09-10
err0
PREAI
errYeon Ho Kim; Donghun Lee; Woong Huh; Jaeho Lee; Donghyun Lee; Gunuk Wang; Jaehyun Park; Daewon Ha; Chul-Ho Lee
err分享
err收藏
Enhanced Device Characteristics of Hybrid-Channel (Poly-Si/IGO) Structures with Ga2O3 and Al2O3 Interlayers by Suppressing Oxidation-Induced Variability for Ultra-High-Density 3D NAND Flash Memory Applications通过抑制氧化诱发的变化，提升含Ga₂O₃和Al₂O₃中间层的混合通道（Poly-Si/IGO）结构器件特性，以用于超高密度3D NAND闪存应用
errAdvanced Functional Materials
IF19
err2025-09-09
err0
PREAI
errTaewon Hwang; Jeongmin Shin; So Young Lim; Sohee Kim; Jae-Min Sim; Su-Hwan Choi; Youngji Noh; Wanki Kim; Daewon Ha; Jin-Seong Park; Yun-Heub Song
err分享
err收藏
In-Situ Surface Energy Engineering for ALD-Derived Highly Reliable Top Gate In2O3 Thin-Film Transistors原位表面能工程用于ALD法制备的高可靠性顶栅In₂O₃薄膜晶体管
errIEEE Electron Device Letters
IF4.5
err2025-09-05
err0
PREAI
errJeong Eun Oh; Cheol Hee Choi; Taikyu Kim; Seong Hun Yoon; Seon Woong Bang; Jiwon Chae; Changik Im; Min Hee Cho; Pilsang Yun; Daewon Ha; Jae Kyeong Jeong
err分享
err收藏
Middle Interlayer Engineered Ferroelectric NAND Flash Overcoming Reliability and Stability Bottlenecks for Next-Generation High-Density Storage Systems中间层工程化铁电NAND闪存：克服下一代高密度存储系统中的可靠性与稳定性瓶颈
errAdvanced Science
IF14.1
err2025-08-23
err0
errOAAI
errGiuk Kim; Sangho Lee; Hyojun Choi; Yangjin Jung; Woongjin Kim; Sanghyun Park; Kwangyou Seo; Kwangsoo Kim; Wanki Kim; Daewon Ha; Mincheol Shin; Jinho Ahn; Sanghun Jeon
err分享
err收藏
Enabling the Angstrom Era: 2D material-based multi-bridge-channel complementary field effect transistors开启埃时代：基于二维材料的桥接通道互补场效应晶体管
errnpj 2D Materials and Applications
IF8.8
err2025-08-02
err0
errOAAI
errHoon Hahn Yoon; Jin Young Park; Yonas Tsegaye Megra; Ju Hwan Baek; Minuk Song; Deji Akinwande; Daewon Ha; Dong-Ho Kang; Hyeon-Jin Shin
err分享
err收藏
Enhancing Program Speed and Diminishing Read After Write Delay by Metal Work Function Engineering通过金属功函数工程提升程序速度并减小写后读延迟
errIEEE Electron Device Letters
IF4.5
err2025-08-01
err0
PREAI
errSeokjoong Shin; Giuk Kim; Hyojun Choi; Sanghyun Park; Kwangyou Seo; Kwangsoo Kim; Wanki Kim; Daewon Ha; Jinho Ahn; Sanghun Jeon
err分享
err收藏
A Novel Indium Gallium Zinc Oxide Channel-Based Electrochemical Field Effect Transistor for Physical Reservoir Computing一种基于铟镓锌氧化物通道的电化学场效应晶体管，用于物理存储器计算
errAdvanced Intelligent Systems
IF6.1
err2025-07-24
err0
errOAAI
errHyejin Kim; Jinho Byun; Junghoon Park; Kiheun Lee; Daewon Ha; Seyoung Kim
err分享
err收藏
Synaptic Weight Cell Enabled by Ferroelectric FETs With Gate Side Charge Injection基于铁电FET通过栅侧电荷注入实现的突触权重单元
errIEEE Electron Device Letters
IF4.5
err2025-07-01
err0
PREAI
errQi Zheng; Yixin Qin; Suhwan Lim; Kijoon Kim; Kwangsoo Kim; Wanki Kim; Daewon Ha; Abhronil Sengupta; Shimeng Yu; Vijaykrishnan Narayanan; Kai Ni
err分享
err收藏
InGaZnO4 and In2O3 Mobility Trend: The Role of Structural Disorder from Amorphous to Crystalline StatesInGaZnO4和In2O3迁移率趋势：从非晶态到晶态结构无序的作用
errACS MATERIALS LETTERS
IF8.7
err2025-04-27
err0
PREAI
errJang, H; Kim, T; Lee, W; Cho, M; Ha, D; Alam, MA; Ye, PD; Jeong, C
err分享
err收藏

研究方向

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合作期刊
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H 指数: 75 · 论文数: 490
M
Muhammad A. Alam
H 指数: 69 · 论文数: 621
K
Kwanghee Lee
H 指数: 69 · 论文数: 535
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