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H

Hanjin Lim

samsung electronics co., ltd.

19H指数
107论文数
1.1K被引数
收录论文 17
发表时间
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Does a Morphotropic Phase Boundary Exist in ZrxHf1-xO2-Based Thin Films?ZrxHf1-xO2基薄膜中是否存在形变畴相界？
errAdvanced Functional Materials
IF19
err2025-10-26
err0
errOAAI
errPramoda Vishnumurthy; Richard Ganser; Dong-Gyu Kim; Intak Jeon; Chang Hwa Jung; Hanjin Lim; Thomas Mikolajick; Susan Trolier-McKinstry; Alfred Kersch; Uwe Schroeder
err分享
err收藏
Field-Induced Structural Dynamics of Polarization Switching in HfxZr1-xO2 Thin FilmsHfxZr1-xO2薄膜中极化反转的场致结构动力学
errAdvanced Materials
IF26.8
err2025-09-25
err0
PREAI
errSangjun Lee; Sunghyun Kim; Seong Yong Park; Donghyun Kim; Su Yong Lee; Daseul Ham; Hyun Hwi Lee; Dongjin Yun; Seontae Park; Soohwan Sul; Seungjin Kang; Geonu Kim; Duk-Hyun Choe; Jooho Lee; Beomseok Kim; Jinseong Heo; Hyung-Suk Jung; Hanjin Lim; Wonsik Choi; Jeong-Gyu Song
err分享
err收藏
Enhancement of electrical properties of morphotropic phase boundary in Hf1-xZrxO2 films by integrating Mo electrode and TiN interlayer for DRAM capacitors通过集成Mo电极和TiN中间层改善Hf1-xZrxO2薄膜中准同型相界处的电学性能，用于DRAM电容器
errAPPLIED SURFACE SCIENCE ADVANCES
IF8.7
err2025-06-01
err2
PREAI
errJu Yong Park; Hyojun Choi; Jaewook Lee; Kun Yang; Sun Young Lee; Dong In Han; Intak Jeon; Chang Hwa Jung; Hanjin Lim; Woongkyu Lee; Min Hyuk Park
err分享
err收藏
HfO2-based ferroelectric synaptic devices: challenges and engineering solutions (vol 61, pg 3061, 2025)
errCHEMICAL COMMUNICATIONS
IF4.2
err2025-01-01
err0
errOAAI
errKwon, Taegyu; Choi, Hyeong Seok; Lee, Dong Hyun; Han, Dong Hee; Cho, Yong Hyeon; Jeon, Intak; Jung, Chang Hwa; Lim, Hanjin; Moon, Taehwan; Park, Min Hyuk
err分享
err收藏
A Route to MoO2 film fabrication via atomic layer deposition using Mo(IV) precursor and oxygen reactant for DRAM applications
errCERAMICS INTERNATIONAL
IF5.6
err2024-04-01
err2
PREAI
errYoon, Ara; Yang, Hae Lin; Lee, Sanghoon; Lee, Seunghwan; Kim, Beomseok; Jung, Changhwa; Lim, Hanjin; Park, Jin-Seong
err分享
err收藏
Atomic layer deposition of molybdenum oxide using (NtBu)2(NMe2)2Mo, hydrogen peroxide (H2O2), and ozone (O3) for DRAM application
errCERAMICS INTERNATIONAL
IF5.6
err2023-02-01
err13
PREAI
errLee, Seunghwan; Yang, Hae Lin; Kim, Beomseok; Lee, Jinho; Lim, Hanjin; Park, Jin-Seong
err分享
err收藏
Study of Metal-Dielectric Interface for Improving Electrical Properties and Reliability of DRAM Capacitor金属-介质界面改善DRAM电容器电性能和可靠性的研究
errADVANCED MATERIALS TECHNOLOGIES
IF6.2
err2022-07-10
err8
PREAI
errLim, HanJin; Choi, Jae Hyoung; Cho, Gihee; Chang, Jaewan; Kim, Younsoo; Jung, Hyung-Suk; Shin, Kyoung-Sub; Seo, Hyungtak; Jeon, Hyeongtag
err分享
err收藏
Structure of Li5AlS4 and comparison with other lithium-containing metal sulfides
errJOURNAL OF SOLID STATE CHEMISTRY
IF3.5
err2018-01-01
err18
PREAI
errLim, Hanjin; Kim, Sung-Chul; Kim, Jaegyeom; Kim, Young-Il; Kim, Seung-Joo
err分享
err收藏
Depth resolved band alignments of ultrathin TiN/ZrO2 and TiN/ZrO2-Al2O3-ZrO2 dynamic random access memory capacitors
errAPPLIED PHYSICS LETTERS
IF3.6
err2014-11-18
err18
PREAI
errLee, Sang Yeon; Chang, Jaewan; Kim, Younsoo; Lim, HanJin; Jeon, Hyeongtag; Seo, Hyungtak
err分享
err收藏
Influence of binders on the sensing and electrical characteristics of WO3-based gas sensors
errSENSORS AND ACTUATORS B-CHEMICAL
IF7.7
err1999-11-01
err43
PREAI
errYang, JI; Lim, H; Han, SD
err分享
err收藏
Influence of quantum-well structural parameters on capacitance-voltage characteristics
errAPPLIED PHYSICS LETTERS
IF3.6
err1999-05-17
err12
PREAI
errMoon, CR; Lim, H
err分享
err收藏
Current-induced persistent capacitance in Au/n-In0.08Ga0.92As0.51P0.49 Schottky contacts
errAPPLIED PHYSICS LETTERS
IF3.6
err1998-12-07
err0
PREAI
errKwon, HK; Kim, Y; Lim, H
err分享
err收藏
Recombination dynamics in n-AlxGa1-x/n-In0.5Ga0.5P type-II heterostructures (vol 73, pg 1245, 1998)
errAPPLIED PHYSICS LETTERS
IF3.6
err1998-10-12
err0
errOAAI
errCho, YH; Song, JJ; Lim, H; Choe, BD; Lee, JI; Kim, D
err分享
err收藏
Influence of partial dopant ionization on the capacitance-voltage profiles of delta-doped structures
errAPPLIED PHYSICS LETTERS
IF3.6
err1998-06-29
err1
PREAI
errMoon, CR; Kwon, SD; Lim, H; Choe, BD
err分享
err收藏
Spatial resolution of capacitance-voltage profiles in quantum well structures
errAPPLIED PHYSICS LETTERS
IF3.6
err1998-03-09
err17
PREAI
errMoon, CR; Choe, BD; Kwon, SD; Lim, H
err分享
err收藏
Electron distribution and capacitance-voltage profiles of multiple quantum well structure from self-consistent simulations
errAPPLIED PHYSICS LETTERS
IF3.6
err1997-06-02
err19
PREAI
errMoon, CR; Choe, BD; Kwon, SD; Lim, H
err分享
err收藏
Effect of precursor history on synthesis of high-T-c BPSCCO superconductor
errJOURNAL OF MATERIALS SCIENCE
IF3.9
err1996-01-01
err3
PREAI
errLim, H; Byrne, JG
err分享
err收藏

研究方向

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合作学者
合作期刊
T
Thomas Mikolajick
H 指数: 99 · 论文数: 793
U
Uwe Schroeder
H 指数: 79 · 论文数: 337
S
Susan Trolier‐McKinstry
H 指数: 75 · 论文数: 806
J
Jin‐Seong Park
H 指数: 63 · 论文数: 552
M
Min Hyuk Park
H 指数: 59 · 论文数: 194
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