未登录
分享
收藏7 kV/16.5 mΩcm2 E-mode active-passivation p-GaN gate HEMT exceeding SiC unipolar limit7 kV/16.5 mΩcm² E-mode活性-钝化p-GaN栅极HEMT超越SiC单极性极限
Liu, Sihang; Cui, Jiawei; Yang, Junjie; Liu, Hongru; Li, Teng; Yu, Jingjing; Lao, Yunhong; Qi, Hengyuan; Duan, Jialin; Wang, Maojun; Liu, Xiaosen; Wei, Jin
分享
收藏
分享
收藏
分享
收藏
分享
收藏
分享
收藏900-V active-passivation p-GaN gate HEMT with suppressed floating Si substrate induced back-gating effect
Chang, Hao; Yang, Junjie; Yu, Jingjing; Cui, Jiawei; Yin, Youyi; Yang, Xuelin; Liu, Xiaosen; Wang, Maojun; Shen, Bo; Wei, Jin
分享
收藏GaN-on-sapphire JTE-anode lateral field-effect rectifier for improved breakdown voltage (>2.5 kV) and dynamic RON蓝宝石上GaN JTE阳极横向场效应整流器,可提高击穿电压 (>2.5 kV) 和动态RON
Cui, Jiawei; Yang, Junjie; Yu, Jingjing; Li, Teng; Yang, Han; Liu, Xiaosen; Wang, Jinyan; Wang, Maojun; Shen, Bo; Wei, Jin
分享
收藏Enhanced robustness against hot-electron-induced degradation in active-passivation p-GaN gate HEMT
Yang, Junjie; Wei, Jin; Wu, Yanlin; Yu, Jingjing; Cui, Jiawei; Yang, Xuelin; Liu, Xiaosen; Wang, Jinyan; Hao, Yilong; Wang, Maojun; Shen, Bo
分享
收藏
分享
收藏
分享
收藏
分享
收藏
分享
收藏
分享
收藏