Vanya Darakchieva

Linkoping University

H指数:37

被引数:6,209

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Resolving Lateral Heat Transport in GaN-on-SiC HEMT Structures via Transient Thermometry

通过瞬态热测量法解析SiC衬底上GaN HEMT结构中的横向热传输

Advanced Materials Technologies

IF6.2

2026-09-220

PRE

Epitaxial MgSnN₂ on 4H-SiC (0001): An Earth-Abundant Nitride for Green Optoelectronics and Photovoltaics

外延生长的MgSnN<sub>2</sub>在4H-SiC (0001)上：一种用于绿色光电子学和光伏技术的地球丰量氮化物

Advanced Optical Materials

IF7.2

2026-09-120

OAAI

Tunable Quasi-Resonances in Polypyrrole Nanodisks

聚吡咯纳米盘中的可调准共振

Advanced Optical Materials

IF7.2

2026-09-120

Mechanical and electrical behaviour of reactive magnetron sputtered low-Al content epitaxial single-crystalline Ti1-xAlxNy thin films

反应磁控溅射低铝含量外延单晶Ti₁₋ₓAlₓN薄膜的力学与电学行为

MATERIALS & DESIGN

IF7.9

2026-08-100

OAAI

a-plane GaN-based fully vertical FinFETs with normally-off operation

a平面GaN基全垂直鳍式场效应晶体管（FinFET）的常断态工作

Semiconductor Science and Technology

IF2.1

2026-05-010

PRE

Crystal Growth Design for Bowing Mitigation in Thick AlGaN Layers on GaN Substrates

Crystal Growth and Design

IF3.4

2026-02-060

Periodic Inversion Domains on Step-Flow Surfaces of N-Polar GaN Grown on m-Plane Offcut 4H-SiC(0001)

ACS APPLIED ELECTRONIC MATERIALS

IF4.7

2026-01-010

PRE

Chemical reaction mechanism between trimethylgallium and oxygen for β-gallium oxide growth: Thermodynamic and experimental studies

三甲基镓与氧气反应生成β-氧化镓的化学机理：热力学与实验研究

JOURNAL OF APPLIED PHYSICS

IF2.5

2025-09-071

High-frequency/high-field electron paramagnetic resonance generalized spectroscopic ellipsometry characterization of Cr3+ in β-Ga2O3

APPLIED PHYSICS LETTERS

IF3.6

2025-02-250

Determination of the conduction and valence band offsets at the Co3O4/3C-SiC p-n heterojunction

APPLIED PHYSICS LETTERS

IF3.6

2024-10-151

PRE

Bloch equations in terahertz magnetic-resonance ellipsometry

PHYSICAL REVIEW B

IF3.7

2024-08-071

Electronic Properties of Group-III Nitride Semiconductors and Device Structures Probed by THz Optical Hall Effect

MATERIALS

IF3.2

2024-07-051

OAAI

High-field / high-frequency electron spin resonances of Fe-doped β-Ga 2 O 3 by terahertz generalized ellipsometry: Monoclinic symmetry effects

PHYSICAL REVIEW B

IF3.7

2024-06-133

Comparison of aluminum nitride thin films prepared by magnetron sputter epitaxy in nitrogen and ammonia atmosphere

APPLIED PHYSICS LETTERS

IF3.6

2024-05-015

Electron effective mass in GaN revisited: New insights from terahertz and mid-infrared optical Hall effect

APL MATERIALS

IF4.5

2024-02-143

Terahertz permittivity parameters of monoclinic single crystal lutetium oxyorthosilicate

APPLIED PHYSICS LETTERS

IF3.6

2024-01-171

Switchable Broadband Terahertz Absorbers Based on Conducting Polymer-Cellulose Aerogels

基于导电聚合物-纤维素气凝胶的可切换宽带太赫兹吸收器

ADVANCED SCIENCE

IF14.1

2023-11-238

Observations of very fast electron traps at SiC/high-κ dielectric interfaces

APL MATERIALS

IF4.5

2023-11-210

Low Al-content n-type AlxGa1-xN layers with a high-electron-mobility grown by hot-wall metalorganic chemical vapor deposition

VACUUM

IF3.9

2023-11-012

OAAI

Correlating cathodoluminescence and scanning transmission electron microscopy for InGaN platelet nano-LEDs

APPLIED PHYSICS LETTERS

IF3.6

2023-07-124

Vanya Darakchieva

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