Andrew J. Green - Publications, H-index & Citations

Andrew J. Green

United States Department of Defense

25H指数

80论文数

3.6K被引数

收录论文 19

发表时间

β-Ga2O3 MOSFETs on highly uniform 2-in. unintentionally doped vertical Bridgman substrates 高均匀性2英寸无意掺杂垂直布里奇曼衬底上的β-Ga2O3 MOSFETs

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A

IF2.1

2026-05-01

PREAI

Sowers, Elizabeth; Liddy, Kyle; Bhattacharyya, Arkka; Ueda, Yuki; Islam, Ahmad; Piel, Joshua J.; Chabak, Kelson D.; Igarashi, Takuya; Koshi, Kimiyoshi; Yamakoshi, Shigenobu; Sasaki, Kohei; Kuramata, Akito; Krishnamoorthy, Sriram; Green, Andrew J.

Impact of Deep-Level Traps on Carrier Mobility in β-Ga₂O₃ MOSFETs 深能级陷阱对β-Ga₂O₃ MOSFET中载流子迁移率的影响

IEEE Transactions on Electron Devices

IF3.2

2026-04-07

PREAI

O. Maimon; N. A. Moser; P. R. Shrestha; M.-Y. Kim; S.-M. Koo; K. J. Liddy; A. J. Green; K. D. Chabak; Sujitra Pookpanratana; Qiliang Li

Non-Arrhenius Trapping Effects in GaN HEMTs 非阿伦尼乌斯陷阱效应对GaN HEMT的影响

IEEE Transactions on Electron Devices

IF3.2

2026-04-01

OAAI

Carter Mayfield; Matt Grupen; Dave Frey; Gary Hughes; Dennis Walker; Andrew J. Green; Maher Tahhan; Matt DeJarld; Eduardo M. Chumbes; Nicholas C. Miller

Effect of surface potential pinning on strain behavior of AlGaN/GaN device structures

APPLIED PHYSICS LETTERS

IF3.6

2023-04-24

PREAI

Blanton, Eric W. W.; Prusnick, Timothy A. A.; Green, Andrew J. J.; Glavin, Nicholas; Snure, Michael

Silicon-doped β-Ga2O3 films grown at 1 μm/h by suboxide molecular-beam epitaxy

APL MATERIALS

IF4.5

2023-04-03

OAAI

Azizie, Kathy; Hensling, Felix V. E.; Gorsak, Cameron A.; Kim, Yunjo; Pieczulewski, Naomi A.; Dryden, Daniel M.; Senevirathna, M. K. Indika; Coye, Selena; Shang, Shun-Li; Steele, Jacob; Vogt, Patrick; Parker, Nicholas A.; Birkholzer, Yorick A.; McCandless, Jonathan P.; Jena, Debdeep; Xing, Huili G.; Liu, Zi-Kui; Williams, Michael D.; Green, Andrew J.; Chabak, Kelson; Muller, David A.; Neal, Adam T.; Mou, Shin; Thompson, Michael O.; Nair, Hari P.; Schlom, Darrell G.

500 °C operation of ß-Ga2O3 field-effect transistors

APPLIED PHYSICS LETTERS

IF3.6

2022-12-12

OAAI

Islam, Ahmad E.; Sepelak, Nicholas P.; Liddy, Kyle J.; Kahler, Rachel; Dryden, Daniel M.; Williams, Jeremiah; Lee, Hanwool; Gann, Katie; Popp, Andreas; Leedy, Kevin D.; Hendricks, Nolan S.; Brown, Jeff. L.; Heller, Eric R.; Wang, Weisong; Zhu, Wenjuan; Thompson, Michael O.; Chabak, Kelson D.; Green, Andrew J.

β-Gallium oxide power electronics Β-氧化镓电力电子

APL MATERIALS

IF4.5

2022-02-07

322

OAAI

Green, Andrew J.; Speck, James; Xing, Grace; Moens, Peter; Allerstam, Fredrik; Gumaelius, Krister; Neyer, Thomas; Arias-Purdue, Andrea; Mehrotra, Vivek; Kuramata, Akito; Sasaki, Kohei; Watanabe, Shinya; Koshi, Kimiyoshi; Blevins, John; Bierwagen, Oliver; Krishnamoorthy, Sriram; Leedy, Kevin; Arehart, Aaron R.; Neal, Adam T.; Mou, Shin; Ringel, Steven A.; Kumar, Avinash; Sharma, Ankit; Ghosh, Krishnendu; Singisetti, Uttam; Li, Wenshen; Chabak, Kelson; Liddy, Kyle; Islam, Ahmad; Rajan, Siddharth; Graham, Samuel; Choi, Sukwon; Cheng, Zhe; Higashiwaki, Masataka

Homoepitaxial β-Ga2O3 transparent conducting oxide with conductivity σ=2323 S cm-1

APL MATERIALS

IF4.5

2021-10-15

PREAI

Jeon, Hyung Min; Leedy, Kevin D.; Look, David C.; Chang, Celesta S.; Muller, David A.; Badescu, Stefan C.; Vasilyev, Vladimir; Brown, Jeff L.; Green, Andrew J.; Chabak, Kelson D.

Electrical and chemical analysis of Ti/Au contacts to β-Ga2O3

APL MATERIALS

IF4.5

2021-06-01

OAAI

Lyle, Luke A. M.; Back, Tyson C.; Bowers, Cynthia T.; Green, Andrew J.; Chabak, Kelson D.; Dorsey, Donald L.; Heller, Eric R.; Porter, Lisa M.

Si content variation and influence of deposition atmosphere in homoepitaxial Si-doped β-Ga2O3 films by pulsed laser deposition

APL MATERIALS

IF4.5

2018-10-01

OAAI

Leedy, Kevin D.; Chabak, Kelson D.; Vasilyev, Vladimir; Look, David C.; Mahalingam, Krishnamurthy; Brown, Jeff L.; Green, Andrew J.; Bowers, Cynthia T.; Crespo, Antonio; Thomson, Darren B.; Jessen, Gregg H.

Highly conductive homoepitaxial Si-doped Ga2O3 films on (010) β-Ga2O3 by pulsed laser deposition

APPLIED PHYSICS LETTERS

IF3.6

2017-07-07

165

OAAI

Leedy, Kevin D.; Chabak, Kelson D.; Vasilyev, Vladimir; Look, David C.; Boeckl, John J.; Brown, Jeff L.; Tetlak, Stephen E.; Green, Andrew J.; Moser, Neil A.; Crespo, Antonio; Thomson, Darren B.; Fitch, Robert C.; McCandless, Jonathan P.; Jessen, Gregg H.

High pulsed current density β-Ga2O3 MOSFETs verified by an analytical model corrected for interface charge

APPLIED PHYSICS LETTERS

IF3.6

2017-04-04

OAAI

Moser, Neil A.; McCandless, Jonathan P.; Crespo, Antonio; Leedy, Kevin D.; Green, Andrew J.; Heller, Eric R.; Chabak, Kelson D.; Peixoto, Nathalia; Jessen, Gregg H.

Enhancement-mode Ga2O3 wrap-gate fin field-effect transistors on native (100) β-Ga2O3 substrate with high breakdown voltage

APPLIED PHYSICS LETTERS

IF3.6

2016-11-21

338

OAAI

Chabak, Kelson D.; Moser, Neil; Green, Andrew J.; Walker, Dennis E.; Tetlak, Stephen E.; Heller, Eric; Crespo, Antonio; Fitch, Robert; McCandless, Jonathan P.; Leedy, Kevin; Baldini, Michele; Wagner, Gunter; Galazka, Zbigniew; Li, Xiuling; Jessen, Gregg

Effect of Ions and Ionic Strength on Surface Plasmon Absorption of Single Gold Nanowires 离子和离子强度对单根金纳米线表面等离子体吸收的影响

ACS NANO

IF16

2016-06-02

PREAI

Baral, Susil; Green, Andrew J.; Richardson, Hugh H.

Increasing Efficiency, Speed, and Responsivity of Vanadium Dioxide Based Photothermally Driven Actuators Using Single-Wall Carbon Nanotube Thin-Films

ACS NANO

IF16

2015-04-13

PREAI

Wang, Tongyu; Torres, David; Fernandez, Felix E.; Green, Andrew J.; Wang, Chuan; Sepulveda, Nelson