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B

Bhaswar Chakrabarti

Indian Institute of Technology

17H指数
77论文数
1.4K被引数
收录论文 15
发表时间
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Memristive Dendritic Device with a Chemical Vapor-Deposited Monolayer MoS2 Film
errACS APPLIED ELECTRONIC MATERIALS
IF4.7
err2024-01-31
err1
PREAI
errThool, Asmita S.; Roy, Sourodeep; Mukherjee, Upasana; Barman, Prahalad Kanti; Poudyal, Saroj; Misra, Abhishek; Chakrabarti, Bhaswar
err分享
err收藏
Ferroelectric Field Effect Transistors-Based Content-Addressable Storage-Class Memory: A Study on the Impact of Device Variation and High-Temperature Compatibility
errADVANCED INTELLIGENT SYSTEMS
IF6.1
err2024-01-08
err0
errOAAI
errSunil, Athira; Rana, S. K. Masud; Lederer, Maximilian; Raffel, Yannick; Mueller, Franz; Olivo, Ricardo; Hoffmann, Raik; Seidel, Konrad; Kaempfe, Thomas; Chakrabarti, Bhaswar; De, Sourav
err分享
err收藏
Asymmetric Resistive Switching of Bilayer HfOx/AlOy and AlOy/HfOx Memristors: The Oxide Layer Characteristics and Performance Optimization for Digital Set and Analog Reset Switching
errACS APPLIED ELECTRONIC MATERIALS
IF4.7
err2023-03-08
err3
errOAAI
errBasnet, Pradip; Anderson, Erik C.; Athena, Fabia Farlin; Chakrabarti, Bhaswar; West, Matthew P.; Vogel, Eric M.
err分享
err收藏
Compute in-Memory with Non-Volatile Elements for Neural Networks: A Review from a Co-Design Perspective使用非易失性元素计算神经网络的内存: 从协同设计的角度进行回顾
errADVANCED MATERIALS
IF26.8
err2023-03-02
err28
errOAAI
errHaensch, Wilfried; Raghunathan, Anand; Roy, Kaushik; Chakrabarti, Bhaswar; Phatak, Charudatta M. M.; Wang, Cheng; Guha, Supratik
err分享
err收藏
Ferroelectric Content-Addressable Memory Cells with IGZO Channel: Impact of Retention Degradation on the Multibit Operation具有IGZO通道的铁电内容可寻址存储单元: 保留退化对多位操作的影响
errACS APPLIED ELECTRONIC MATERIALS
IF4.7
err2023-01-04
err10
errOAAI
errSk, Masud Rana; Thunder, Sunanda; Lehninger, David; Raffel, Yannick; Lederer, Maximilian; Jank, Michael P. M.; Kaempfe, Thomas; De, Sourav; Chakrabarti, Bhaswar
err分享
err收藏
Insulator-to-metal phase transition in a few-layered MoSe2 field effect transistor
errNANOSCALE
IF5.1
err2023-01-01
err3
errOAAI
errPradhan, Nihar R. R.; Garcia, Carlos; Chakrabarti, Bhaswar; Rosenmann, Daniel; Divan, Ralu; Sumant, Anirudha V. V.; Miller, Suzanne; Hilton, David; Karaiskaj, Denis; McGill, Stephen A. A.
err分享
err收藏
Nanoporous Dielectric Resistive Memories Using Sequential Infiltration Synthesis使用顺序渗透合成的纳米多孔介电电阻存储器
errACS NANO
IF16
err2021-03-01
err17
PREAI
errChakrabarti, Bhaswar; Chan, Henry; Alam, Khan; Koneru, Aditya; Gage, Thomas E.; Ocola, Leonidas E.; Divan, Ralu; Rosenmann, Daniel; Khanna, Abhishek; Grisafe, Benjamin; Sanders, Toby; Datta, Suman; Arslan, Ilke; Sankaranarayan, Subramanian K. R. S.; Guha, Supratik
err分享
err收藏
Photogating-driven enhanced responsivity in a few-layered ReSe2 phototransistor
errJOURNAL OF MATERIALS CHEMISTRY C
IF5.1
err2021-01-01
err12
errOAAI
errPatil, Prasanna D.; Wasala, Milinda; Alkhaldi, Rana; Weber, Lincoln; Kovi, Kiran Kumar; Chakrabarti, Bhaswar; Nash, Jawnaye A.; Rhodes, Daniel; Rosenmann, Daniel; Divan, Ralu; Sumant, Anirudha V.; Balicas, Luis; Pradhan, Nihar R.; Talapatra, Saikat
err分享
err收藏
Implementation of multilayer perceptron network with highly uniform passive memristive crossbar circuits
errNATURE COMMUNICATIONS
IF15.7
err2018-06-13
err300
errOAAI
errBayat, F. Merrikh; Prezioso, M.; Chakrabarti, B.; Nili, H.; Kataeva, I.; Strukov, D.
err分享
err收藏
Silicon compatible Sn-based resistive switching memory
errNANOSCALE
IF5.1
err2018-01-01
err27
errOAAI
errSonde, Sushant; Chakrabarti, Bhaswar; Liu, Yuzi; Sasikumar, Kiran; Lin, Jianqiang; Stan, Liliana; Divan, Ralu; Ocola, Leonidas E.; Rosenmann, Daniel; Choudhury, Pabitra; Ni, Kai; Sankaranarayanan, Subramanian K. R. S.; Datta, Suman; Guha, Supratik
err分享
err收藏
A multiply-add engine with monolithically integrated 3D memristor crossbar/CMOS hybrid circuit (vol 7, 42429, 2017)
errSCIENTIFIC REPORTS
IF3.9
err2017-07-27
err1
errOAAI
errChakrabarti, B.; Lastras-Montano, M. A.; Adam, G.; Prezioso, M.; Hoskins, B.; Payvand, M.; Madhavan, A.; Ghofrani, A.; Theogarajan, L.; Cheng, K. -T.; Strukov, D. B.
err分享
err收藏
A multiply-add engine with monolithically integrated 3D memristor crossbar/CMOS hybrid circuit
errSCIENTIFIC REPORTS
IF3.9
err2017-02-14
err85
errOAAI
errChakrabarti, B.; Lastras-Montano, M. A.; Adam, G.; Prezioso, M.; Hoskins, B.; Cheng, K. -T.; Strukov, D. B.
err分享
err收藏
Cleaning graphene with a titanium sacrificial layer
errAPPLIED PHYSICS LETTERS
IF3.6
err2014-06-04
err38
errOAAI
errJoiner, C. A.; Roy, T.; Hesabi, Z. R.; Chakrabarti, B.; Vogel, E. M.
err分享
err收藏
Tunneling characteristics in chemical vapor deposited graphene-hexagonal boron nitride-graphene junctions
errAPPLIED PHYSICS LETTERS
IF3.6
err2014-03-27
err49
errOAAI
errRoy, T.; Liu, L.; de la Barrera, S.; Chakrabarti, B.; Hesabi, Z. R.; Joiner, C. A.; Feenstra, R. M.; Gu, G.; Vogel, E. M.
err分享
err收藏
Trapping Dynamics and Endurance in HfO2-FeFETs: An Insight From Charge PumpingHfO2-FeFETs中的陷阱动力学与耐久性：基于电荷泵的见解
errIEEE Electron Device Letters
IF4.5
err
err0
PREAI
errMasud Rana Sk; Asim Senapati; Gautham Kumar; Yannick Raffel; Konrad Seidel; Apu Das; Agniva Paul; Maximilian Lederer; Chun Cheng Chen; Andrea Padovani; Bhaswar Chakrabarti; Sourav De
err分享
err收藏

研究方向

暂时未获取到该数据
合作学者
合作期刊
H
Hossein Ardeschir Ghofrani
H 指数: 120 · 论文数: 1.2K
K
Kaushik Roy
H 指数: 101 · 论文数: 1.4K
S
Suman Datta
H 指数: 79 · 论文数: 652
K
Kwang‐Ting Cheng
H 指数: 79 · 论文数: 1.0K
R
R. M. Feenstra
H 指数: 75 · 论文数: 559
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