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T

Tien Dat Ngo

remisebosweg 1

H指数:15

被引数:545

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Advances in gate stack development for p-type 2D channel FETs through sacrificial WSe2 bilayer oxidation

通过牺牲性WSe2双层氧化实现p型二维通道FET栅堆叠发展的进展

npj 2D Materials and Applications

IF8.8

2026-08-070

OA

Transition-metal-doped WSe2 homojunctions for multifunctional logic and optoelectronic devices

过渡金属掺杂的WSe2同质结用于多功能逻辑和光电器件

Communications Materials

IF9.6

2026-05-280

OAAI

Quantum Phase Transitions in Graphene Coupled to a Twisted WSe2 Moiré Ferroelectricity

石墨烯与扭曲的WSe2莫尔铁电性耦合中的量子相变

Advanced Materials

IF26.8

2025-10-220

OAAI

Controllable p-Type Doping of 2D WSe₂ pFET by Engineered Surface Charge Transfer Doping With Metal Co-Seeding

通过工程化表面电荷转移掺杂与金属共播种，实现二维WSe<sub>2</sub> pFET的可控p型掺杂

IEEE Electron Device Letters

IF4.5

2025-10-030

PRE

Opposite synaptic plasticity in oxidation-layer-controlled 2D materials-based memristors for mimicking heterosynaptic plasticity

IF10.9

2024-12-010

PRE

Twist-Controlled Ferroelectricity and Emergent Multiferroicity in WSe2 Bilayers

WSe2双层中扭曲控制的铁电性和新兴的多铁性

ADVANCED MATERIALS

IF26.8

2024-09-240

PRE

Advances and Applications of Oxidized van der Waals Transition Metal Dichalcogenides

氧化范德华过渡金属二硫化物的研究进展及应用

ADVANCED SCIENCE

IF14.1

2024-09-230

OA

Semi-Metal Edge Contact for Barrier-Free Carrier Transport in MoS2 Field Effect Transistors

半金属边缘接触用于MoS2场效应晶体管中载流子的无障碍传输

ACS APPLIED ELECTRONIC MATERIALS

IF4.7

2024-05-205

PRE

Link between T-Linear Resistivity and Quantum Criticality in Ambipolar Black Phosphorus

IF16

2024-04-230

PRE

Analysis of p-Type Doping in Graphene Induced by Monolayer-Oxidized TMDs

ACS APPLIED MATERIALS & INTERFACES

IF8.2

2024-01-124

PRE

Self-Aligned Top-Gate Structure in High-Performance 2D p-FETs via van der Waals Integration and Contact Spacer Doping

IF9.1

2023-11-208

PRE

Doping-Free High-Performance Photovoltaic Effect in a WSe2 Lateral p-n Homojunction Formed by Contact Engineering

通过接触工程形成的WSe2横向p-n同质结中的无掺杂高性能光伏效应

ACS APPLIED MATERIALS & INTERFACES

IF8.2

2023-07-133

PRE

Modulation of Contact Resistance of Dual-Gated MoS2 FETs Using Fermi-Level Pinning-Free Antimony Semi-Metal Contacts

ADVANCED SCIENCE

IF14.1

2023-05-058

OA

Achieving Ultrahigh Electron Mobility in PdSe2 Field-Effect Transistors via Semimetal Antimony as Contacts

通过半金属锑作为触点在PdSe2场效应晶体管中实现超高电子迁移率

ADVANCED FUNCTIONAL MATERIALS

IF19

2023-04-1414

PRE

Percolation-Based Metal-Insulator Transition in Black Phosphorus Field Effect Transistors

黑磷场效应晶体管中基于渗流的金属-绝缘体转变

ACS APPLIED MATERIALS & INTERFACES

IF8.2

2023-03-012

PRE

Self-Forming p-n Junction Diode Realized with WSe2 Surface and Edge Dual Contacts

用WSe2表面和边缘双触点实现的自形成p-n结二极管

IF12.1

2022-10-1016

PRE

Recent Progress in 1D Contacts for 2D-Material-Based Devices

基于2d材料的设备1D触点的最新进展

ADVANCED MATERIALS

IF26.8

2022-08-2926

OAAI

Selective Electron Beam Patterning of Oxygen-Doped WSe2 for Seamless Lateral Junction Transistors

ADVANCED SCIENCE

IF14.1

2022-07-1922

OAAI

Anomalously persistent p-type behavior of WSe2 field-effect transistors by oxidized edge-induced Fermi-level pinning

JOURNAL OF MATERIALS CHEMISTRY C

IF5.1

2022-01-0114

PRE