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G

Giuseppe Greco

consiglio nazionale delle ricerche

H指数:35

被引数:4,599

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Electrical properties of Schottky diodes on ammonothermal and hydride vapor phase epitaxy GaN substrates

肖特基二极管在氨热法和水热气相外延GaN衬底上的电学特性

Materials Science in Semiconductor Processing

IF4.6

2026-08-220

OAAI

Superior quality of n− GaN epilayer grown on ammonothermal substrate accessed by DLTS

在氨热衬底上生长的n型GaN外延层的高品质通过DLTS得到验证

Micro and Nanostructures

IF3

2026-06-130

OAAI

Energy Band Alignment and Electro-Optical Behavior of Nearly Unstrained Monolayer MoS2 Heterostructures With GaN

近无应变单层二硫化钼异质结与GaN的能带排列及电光行为

Advanced Materials Interfaces

IF4.4

2026-05-040

OAAI

Impact of the Schottky Barrier and Contact-Induced Strain Variations inside the Channel on the Electrical Behavior of Monolayer MoS2 Transistors

肖特基势垒及接触诱导的应变变化对单层MoS2晶体管电学行为的影响

IF8.3

2025-09-280

OAAI

Tunneling and thermionic emission as charge transport mechanisms in W-based Schottky contacts on AlGaN/GaN heterostructures

APPLIED SURFACE SCIENCE

IF6.9

2025-01-011

OAAI

Two-dimensional electron gas isolation mechanism in Al0.2Ga0.8N/GaN heterostructure by low-energy Ar, C, Fe ion implantation

APPLIED SURFACE SCIENCE

IF6.9

2024-11-010

OAAI

Towards aluminum oxide/aluminum nitride insulating stacks on 4H-SiC by atomic layer deposition

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING

IF4.6

2024-05-012

PRE

Schottky contacts on sulfurized silicon carbide (4H-SiC) surface

APPLIED PHYSICS LETTERS

IF3.6

2024-03-041

OA

Improvement of Ti/Al/Ti Ohmic contacts on AlGaN/GaN heterostructures by insertion of a thin carbon interfacial layer

APPLIED PHYSICS LETTERS

IF3.6

2024-01-021

PRE

Isolation of bidimensional electron gas in AlGaN/GaN heterojunction using Ar ion implantation

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING

IF4.6

2023-12-013

PRE

Large-Area MoS2 Films Grown on Sapphire and GaN Substrates by Pulsed Laser Deposition

通过脉冲激光沉积在蓝宝石和GaN衬底上生长的大面积MoS2薄膜

IF4.3

2023-10-264

OAAI

Atomic resolution interface structure and vertical current injection in highly uniform MoS2 heterojunctions with bulk GaN

APPLIED SURFACE SCIENCE

IF6.9

2023-09-0115

OAAI

Al2O3 Layers Grown by Atomic Layer Deposition as Gate Insulator in 3C-SiC MOS Devices

IF3.2

2023-08-153

OAAI

Threshold voltage instability by charge trapping effects in the gate region of p-GaN HEMTs

APPLIED PHYSICS LETTERS

IF3.6

2022-12-0720

OA

Towards vertical Schottky diodes on bulk cubic silicon carbide (3C-SiC)

APPLIED SURFACE SCIENCE

IF6.9

2022-12-0110

PRE

A Low Temperature Growth of Cu2O Thin Films as Hole Transporting Material for Perovskite Solar Cells

IF3.2

2022-11-046

OAAI

Highly Homogeneous 2D/3D Heterojunction Diodes by Pulsed Laser Deposition of MoS2 on Ion Implantation Doped 4H-SiC

ADVANCED MATERIALS INTERFACES

IF4.4

2022-10-047

OA

Strain, Doping, and Electronic Transport of Large Area Monolayer MoS2 Exfoliated on Gold and Transferred to an Insulating Substrate (vol 13, pg 31248, 2021)

ACS APPLIED MATERIALS & INTERFACES

IF8.2

2022-07-290

OAAI

Temperature and time dependent electron trapping in Al2O3 thin films onto AlGaN/GaN heterostructures

APPLIED SURFACE SCIENCE

IF6.9

2022-03-013

PRE

Structural and Insulating Behaviour of High-Permittivity Binary Oxide Thin Films for Silicon Carbide and Gallium Nitride Electronic Devices

IF3.2

2022-01-2219

OAAI