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Seungjoon Jeong

korea university

0H指数
5论文数
0被引数
收录论文 4
发表时间
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Access-Induced Pass-Gate Bias Stress in Oxide-Semiconductor SRAM: Stress-Aware SPICE Analysis and SU-8 Passivation氧化物半导体SRAM中的访问诱导传输门偏压应力：应力感知SPICE分析与SU-8钝化
errIEEE Transactions on Electron Devices
IF3.2
err2026-07-28
err0
PREAI
errChangwoo Han; Hyeonjung Park; Yejoo Choi; Junseok Kim; Jaehyuk Lim; Myeongjae Choi; Huiseong Shin; Seungjoon Jeong; Changhwan Shin
err分享
err收藏
Ferroelectric Charging Tunnel Junctions: Resolving Transport Trade-Offs via Trap-Assisted Barrier Modulation for Physical Reservoir Computing铁电充电隧道结：通过陷俘辅助势垒调制解决物理 reservoir computing 中的输运权衡
errAdvanced Functional Materials
IF19
err2026-03-31
err0
PREAI
errHuiseong Shin; Myeongjae Choi; Junseok Kim; Seungjoon Jeong; Donghyeon Kim; Sehee Kim; Changwoo Han; Hyeonjung Park; Yejoo Choi; Changhwan Shin
err分享
err收藏
All-Oxide ITO/HZO/WOx Ferroelectric Tunnel Junctions with Oxygen-Engineered Interfaces for Highly Endurable Neuromorphic Computing全氧化物ITO/HZO/WOx铁电隧穿结及其氧工程化界面，用于高耐久性神经形态计算
errACS Applied Materials & Interfaces
IF0
err2026-03-31
err0
PREAI
errSeungjoon Jeong; Huiseong Shin; Myeongjae Choi; Changwoo Han; Hyeonjung Park; Junseok Kim; Yejoo Choi; Changhwan Shin
err分享
err收藏
Wide-Range Threshold Voltage Control of Dual-Inner-Gate Gate-All-Around Field-Effect Transistor双内栅全环绕栅场效应晶体管的大范围阈值电压控制
errIEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY
IF2.3
err2025-12-01
err0
PREAI
errJeong, Seungjoon; Shin, Changhwan
err分享
err收藏

研究方向

暂时未获取到该数据
合作学者
合作期刊
C
Changhwan Shin
H 指数: 33 · 论文数: 257
J
Junseok Kim
H 指数: 10 · 论文数: 37
H
Hyeonjung Park
H 指数: 1 · 论文数: 7
C
Changwoo Han
H 指数: 1 · 论文数: 4
M
Myeongjae Choi
H 指数: 0 · 论文数: 7
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