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Changhwan Shin

korea university

33H指数
256论文数
4.0K被引数
收录论文 52
发表时间
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Origin of Dark Current Robustness in Photomultiplication Organic Photodetectors Enabled by Ionic Conjugated Electron-Blocking Layers通过离子共轭电子阻挡层实现的倍增有机光电探测器的暗电流鲁棒性起源
errAdvanced Materials
IF26.8
err2026-07-31
err0
errOAAI
errYelim Kang; Min Hun Jee; Shuai Zhang; Sang Heon Lee; Jung Min Ha; Xingchao Zhao; Xiaoling Ma; Huiseong Shin; Changhwan Shin; Soonyong Lee; Fujun Zhang; Jae Won Shim; Han Young Woo
err分享
err收藏
Access-Induced Pass-Gate Bias Stress in Oxide-Semiconductor SRAM: Stress-Aware SPICE Analysis and SU-8 Passivation氧化物半导体SRAM中的访问诱导传输门偏压应力：应力感知SPICE分析与SU-8钝化
errIEEE Transactions on Electron Devices
IF3.2
err2026-07-28
err0
PREAI
errChangwoo Han; Hyeonjung Park; Yejoo Choi; Junseok Kim; Jaehyuk Lim; Myeongjae Choi; Huiseong Shin; Seungjoon Jeong; Changhwan Shin
err分享
err收藏
Impact of Metal-Gate-Induced Stress on Device- and Circuit-Level Performance of GAAFET CMOS Inverters金属栅极诱导应力对GAAFET CMOS反相器器件级和电路级性能的影响
errElectronics
IF2.6
err2026-07-10
err0
errOAAI
errSubin Lim; Jaehyuk Lim; Donghwan Han; Myongjin Kim; Changhwan Shin
err分享
err收藏
Reduced Leakage and Enhanced Endurance via an ITO Oxygen Reservoir Layer in HZO Ferroelectric Capacitors通过ITO氧储备层降低泄漏并增强HZO铁电电容器的耐久性
errIEEE Electron Device Letters
IF4.5
err2026-04-01
err0
PREAI
errChoi, Haevin; Park, Hyeonjung; Han, Changwoo; Choi, Myeongjae; Choi, Yejoo; Shin, Changhwan
err分享
err收藏
All-Oxide ITO/HZO/WOx Ferroelectric Tunnel Junctions with Oxygen-Engineered Interfaces for Highly Endurable Neuromorphic Computing全氧化物ITO/HZO/WOx铁电隧穿结及其氧工程化界面，用于高耐久性神经形态计算
errACS Applied Materials & Interfaces
IF0
err2026-03-31
err0
PREAI
errSeungjoon Jeong; Huiseong Shin; Myeongjae Choi; Changwoo Han; Hyeonjung Park; Junseok Kim; Yejoo Choi; Changhwan Shin
err分享
err收藏
Asymmetric Polarization in FE/AFE Bilayer HZO Memcapacitors via Composition-Induced Built-in Bias铁电/反铁电双层HZO忆容器的组分诱导内建偏压不对称极化
errACS Applied Materials & Interfaces
IF0
err2026-03-10
err0
PREAI
errJunseok Kim; Huiseong Shin; Hyeonjung Park; Changwoo Han; Myeongjae Choi; Changhwan Shin
err分享
err收藏
Correction to “Hf/Zr Superlattice-Based High-κ Gate Dielectrics with Dipole Layer Engineering for Advanced CMOS”对“Hf/Zr超晶格基高-κ栅介质及其偶极层工程在先进CMOS中的应用”的更正
errACS Nano
IF16
err2026-02-16
err0
errOAAI
errTaeyoung Song; Sanghyun Kang; Yu-Hsin Kuo; Jiayi Chen; Lance Fernandes; Nashrah Afroze; Mengkun Tian; Hyoung Won Baac; Changhwan Shin; Asif Islam Khan
err分享
err收藏
Hybrid Convolutional Neural Network-Analytical Model for Prediction of Line Edge Roughness-Induced Performance Variations in Fin-Shaped Field-Effect Transistor Devices and SRAM混合卷积神经网络-分析模型，用于预测鳍形场效应晶体管器件和SRAM中由线边缘粗糙度引起的性能变化
errADVANCED INTELLIGENT SYSTEMS
IF6.1
err2025-12-01
err0
errOAAI
errLim, Jaehyuk; Kim, Myongjin; Han, Changwoo; Baac, Hyoung Won; Shin, Changhwan
err分享
err收藏
Wide-Range Threshold Voltage Control of Dual-Inner-Gate Gate-All-Around Field-Effect Transistor双内栅全环绕栅场效应晶体管的大范围阈值电压控制
errIEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY
IF2.3
err2025-12-01
err0
PREAI
errJeong, Seungjoon; Shin, Changhwan
err分享
err收藏
First Demonstration of Hysteresis-Free IGZO/SnO-Based Complementary Circuits and SRAM with Long-Term Reliability Using SU-8 Passivation首次演示无迟滞IGZO/SnO基互补电路和具有长期可靠性的SRAM，使用SU-8钝化层
errNano Convergence
IF11
err2025-10-31
err0
errOAAI
errChangwoo Han; Hyeonjung Park; Yejoo Choi; Myeongjae Choi; Jaehyuk Lim; Huiseong Shin; Seungjoon Moon; Changhwan Shin
err分享
err收藏
Comprehensive Understanding of Fatigue; Breakdown; and Recovery Mechanism by Thickness Scaling in Hf0.5Zr0.5O2/Ge MF(I)S Capacitors for Low Writing Voltages通过厚度缩放对Hf0.5Zr0.5O2/Ge MF(I)S电容器在低写入电压下的疲劳、击穿及恢复机制的全面理解
errACS Applied Electronic Materials
IF4.7
err2025-07-18
err0
PREAI
errJai-Youn Jeong; Kyeol Ko; Changhwan Shin; Jae-Hoon Han
err分享
err收藏
Learning hidden relationship between environment and control variables for direct control of automated greenhouse using Transformer-based model利用基于Transformer的模型学习环境与控制变量之间的隐藏关系，以实现自动化温室的直接控制
errCOMPUTERS AND ELECTRONICS IN AGRICULTURE
IF8.9
err2025-06-04
err0
errOAAI
errLee, Junseo; Im, Seongil; Jeong, Jae-Seung; Lee, Taek Sung; Park, Soo Hyun; Shin, Changhwan; Ju, Hyunsu; Kim, Hyung-Jun
err分享
err收藏
Investigation of the Switching Mechanism in the Bipolar and Complementary Resistive Switching of HfO x -Based Resistive Random-Access Memory through Rapid-Thermal-Annealing-Induced Grain Boundary Engineering
errACS APPLIED ELECTRONIC MATERIALS
IF4.7
err2025-04-01
err0
PREAI
errKim, Gwon; Sung, Juho; Kang, Sanghyun; Lim, Jaehyuk; Shin, Changhwan
err分享
err收藏
Study of 3-D Line Edge Roughness (LER) in Vertical Channel Array Transistor for DRAM垂直通道阵列晶体管中3-D线边缘粗糙度(LER)的研究
errIEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems
IF2.9
err2025-01-01
err0
PREAI
errJaehyuk Lim; Seokchan Yoon; Juho Sung; Sanghyun Kang; Gwon Kim; Hyoung Won Baac; Changhwan Shin
err分享
err收藏
Device Design Guidelines to Boost Up AC Performance of CFET (Complementary Field-Effect-Transistor)-Based Inverter基于CFET（互补场效应晶体管）反相器的AC性能提升设备设计指南
errIEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems
IF2.9
err2025-01-01
err0
PREAI
errJaehyuk Lim; Donghwan Han; Juho Sung; Seokchan Yoon; Sanghyun Kang; Gwon Kim; Hyoung Won Baac; Changhwan Shin
err分享
err收藏
Oxygen reservoir effect of Tungsten trioxide electrode on endurance performance of ferroelectric capacitors for FeRAM applications
errSCIENTIFIC REPORTS
IF3.9
err2024-11-21
err1
errOAAI
errChoi, Yejoo; Shin, Jaemin; Min, Jinhong; Moon, Seungjun; Chu, Daeyoung; Han, Donghwan; Shin, Changhwan
err分享
err收藏
Sub-Boltzmann Switching, Hysteresis-Free Charge Modulated Negative Differential Resistance FinFET
errACS NANO
IF16
err2024-09-16
err0
PREAI
errSung, Juho; Kang, Sanghyun; Han, Donghwan; Kim, Gwon; Lim, Jaehyuk; Son, Myoungsu; Shin, Changhwan
err分享
err收藏
First integration of Ni barrier layer for enhanced threshold switching characteristics in Ag/HfO 2-based TS device
errMATERIALS TODAY ADVANCES
IF8
err2024-06-01
err0
errOAAI
errChu, Daeyoung; Kang, Sanghyun; Kim, Gwon; Sung, Juho; Lim, Jaehyuk; Choi, Yejoo; Han, Donghwan; Shin, Changhwan
err分享
err收藏
Comparative Study of Novel u-Shaped SOI FinFET Against Multiple-Fin Bulk/SOI FinFET新型u形SOI FinFET与多鳍体/SOI FinFET的比较研究
errIEEE ACCESS
IF3.6
err2023-01-01
err6
errOAAI
errSon, Myoungsu; Sung, Juho; Baac, Hyoung Won; Shin, Changhwan
err分享
err收藏
Improved remnant polarization of Zr-doped HfO2 ferroelectric film by CF4/O2 plasma passivation
errSCIENTIFIC REPORTS
IF3.9
err2022-10-06
err15
errOAAI
errChoi, Yejoo; Park, Hyeonjung; Han, Changwoo; Min, Jinhong; Shin, Changhwan
err分享
err收藏

研究方向

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合作学者
合作期刊
J
Jae Wook Lee
H 指数: 93 · 论文数: 2.3K
H
Han Young Woo
H 指数: 86 · 论文数: 735
T
Tae‐il Kim
H 指数: 65 · 论文数: 300
B
Byoung Koun Min
H 指数: 63 · 论文数: 269
J
Jin‐Hong Park
H 指数: 63 · 论文数: 456
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