Bernhard Stampfer - Publications, H-index & Citations

Bernhard Stampfer

Institute for Microelectronics

13H指数

46论文数

508被引数

收录论文 7

发表时间

Evaluation of the robustness of the defect-centric model for defect parameter extraction from RTN and BTI analysis using Comphy 使用Comphy通过RTN和BTI分析评估缺陷中心模型在缺陷参数提取中的鲁棒性

Microelectronic Engineering

IF3.1

2025-12-05

OAAI

Martin E.M. Loesener; Tobias Zinsler; Bernhard Stampfer; Florian Wimmer; Eleftherios Ioannidis; Walter Pflanzl; Rainer Minixhofer; Tibor Grasser; Michael Waltl

A standardized approach to characterize hysteresis in 2D-materials-based transistors for stability benchmarking and performance projection 一种标准化的方法来表征基于2d材料的晶体管中的磁滞，以进行稳定性基准测试和性能预测

Nature Communications

IF15.7

2025-11-21

OAAI

Alexander Karl; Axel Verdianu; Dominic Waldhoer; Theresia Knobloch; Joël Kurzweil; Mina Bahrami; Mohammad Rasool Davoudi; Pedram Khakbaz; Bernhard Stampfer; Seyed Mehdi Sattari-Esfahlan; Yury Illarionov; Aftab Nazir; Changze Liu; Yu Zheng; Lorenzo Pettorosso; Dmitry Polyushkin; Thomas Müller; Saptarshi Das; Xiao Renshaw Wang; Junchuan Tang; Yichi Zhang; Congwei Tan; Ye Li; Hailin Peng; Michael Waltl; Tibor Grasser

A stochastic encoder using point defects in two-dimensional materials

NATURE COMMUNICATIONS

IF15.7

2024-12-04

OAAI

Ravichandran, Harikrishnan; Knobloch, Theresia; Subbulakshmi Radhakrishnan, Shiva; Wilhelmer, Christoph; Stepanoff, Sergei P.; Stampfer, Bernhard; Ghosh, Subir; Oberoi, Aaryan; Waldhoer, Dominic; Chen, Chen; Redwing, Joan M.; Wolfe, Douglas E.; Grasser, Tibor; Das, Saptarshi

Observation of Rich Defect Dynamics in Monolayer MoS2 单层MoS2中富含缺陷动力学的观察

ACS NANO

IF16

2023-07-25

PREAI

Ravichandran, Harikrishnan; Knobloch, Theresia; Pannone, Andrew; Karl, Alexander; Stampfer, Bernhard; Waldhoer, Dominic; Zheng, Yikai; Sakib, Najam U.; Sadaf, Muhtasim Ul Karim; Pendurthi, Rahul; Torsi, Riccardo; Robinson, Joshua A. A.; Grasser, Tibor; Das, Saptarshi

Perspective of 2D Integrated Electronic Circuits: Scientific Pipe Dream or Disruptive Technology?二维集成电子电路透视: 科学白日梦还是颠覆性技术？

ADVANCED MATERIALS

IF26.8

2022-04-10

OAAI

Waltl, Michael; Knobloch, Theresia; Tselios, Konstantinos; Filipovic, Lado; Stampfer, Bernhard; Hernandez, Yoanlys; Waldhor, Dominic; Illarionov, Yury; Kaczer, Ben; Grasser, Tibor

Semi-Automated Extraction of the Distribution of Single Defects for nMOS Transistors nMOS晶体管单个缺陷分布的半自动提取

MICROMACHINES

IF3

2020-04-23

OAAI

Stampfer, Bernhard; Schanovsky, Franz; Grasser, Tibor; Waltl, Michael

Characterization of Single Defects in Ultrascaled MoS2 Field-Effect Transistors 超大规模MoS2场效应晶体管中单个缺陷的表征

ACS NANO

IF16

2018-06-07

PREAI

Stampfer, Bernhard; Zhang, Feng; Illarionov, Yury Yuryevich; Knobloch, Theresia; Wu, Peng; Waltl, Michael; Grill, Alexander; Appenzeller, Joerg; Grasser, Tibor

研究方向