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Sanghun Jeon

korea advanced institute of science & technology (kaist)

52H指数
270论文数
1.1W被引数
收录论文 110
发表时间
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Band Engineering of Gate Interlayer for Low-Voltage Operation and Enhanced Reliability in Gate-Injection Type FeFETs栅注入型FeFETs中栅极层间带工程用于低压操作和可靠性增强
errIEEE Electron Device Letters
IF4.5
err2026-04-01
err0
PREAI
errKim, Hoon; Kim, Giuk; Choi, Hyojun; Joh, Hongrae; Kang, Hyunjun; Park, Sanghyun; Seo, Kwangyou; Kim, Kwangsoo; Kim, Wanki; Ha, Daewon; Ahn, Jinho; Jeon, Sanghun
err分享
err收藏
A Novel Ferroelectric NAND Cell Structure Featuring Ultrathin IGZO Charge Trap Layer for Superior Endurance and Retention新型铁电NAND单元结构，具有超薄IGZO电荷捕获层，以实现卓越的耐久性和保持性
errIEEE Transactions on Electron Devices
IF3.2
err2026-02-11
err0
PREAI
errHyunjun Kang; Hongrae Joh; Junhyeok Kwak; Giuk Kim; Hyojun Choi; Hoon Kim; Sanghyun Park; Kwangyou Seo; Kwangsoo Kim; Wanki Kim; Daewon Ha; Jinho Ahn; Sanghun Jeon
err分享
err收藏
Deeply Implantable, Shape-Morphing, 3D MicroLEDs for Pancreatic Cancer Therapy (Adv. Mater. 49/2025)深度植入式、形状变形、3D微发光二极管用于胰腺癌治疗 (Adv. Mater. 49/2025)
errAdvanced Materials
IF26.8
err2025-12-10
err0
errOAAI
errJae Hee Lee; Chae Gyu Lee; Min Seo Kim; Seungyeob Kim; Myoung Song; Haohui Zhang; Eunbyeol Yang; Yoon Hee Kwon; Young Hoon Jung; Dong Yeol Hyeon; Yoon Ji Choi; Seyong Oh; Daniel J. Joe; Taek-Soo Kim; Sanghun Jeon; Yonggang Huang; Tae-Hyuk Kwon; Keon Jae Lee
err分享
err收藏
An ultra-thin InO interlayer as an oxygen reservoir for defect passivation and enhanced ferroelectricity in hafnia devices
errJOURNAL OF MATERIALS CHEMISTRY C
IF5.1
err2025-11-01
err0
PREAI
errHwang, Junghyeon; Kim, Chaeheon; Ahn, Jinho; Jeon, Sanghun
err分享
err收藏
Ferroelectricity in Sub-3 nm HZO via a Thin Mo Layer: Interface Engineering for Scalable Memory通过薄钼层在亚3纳米HZO中实现铁电性：面向可扩展存储的界面工程
errPHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE
IF1.9
err2025-11-01
err0
PREAI
errKim, Yongsu; Hwang, Junghyeon; Kim, Chaeheon; Kang, Geonhyeong; Jeon, Sanghun
err分享
err收藏
Interface engineering of oxidized Mo electrodes for imprint stability and enhanced endurance in hafnia-based ferroelectric devices氧化Mo电极的界面工程以提高铪基铁电设备的压印稳定性和增强耐久性
errJ. Mater. Chem. C
IF0
err2025-10-29
err0
PREAI
errJunghyeon Hwang †; Chaeheon Kim †; Geonhyeong Kang; Yongsu Kim; Jinho Ahn; Sanghun Jeon
err分享
err收藏
Stabilized Negative Capacitance for Near-Theoretical Efficiency and High Reliability in Charge Trap Flash Memory稳定化负电容效应用于实现近理论效率和高可靠性在电荷俘获闪存中
errMaterials Today Physics
IF9.7
err2025-09-19
err0
PREAI
errSangho Lee; Giuk Kim; Yunseok Nam; Yangjin Jeong; Hyunjun Kang; Woongjin Kim; Hunbeom Shin; Mincheol Shin; Sanghyun Park; Kwangyou Seo; Kwangsoo Kim; Wanki Kim; Daewon Ha; Jinho Ahn; Sanghun Jeon
err分享
err收藏
Near-Sensor Analog Computing via Monolithic 3D Piezoelectric Sensor–FeFET for Tactile Sensing System基于单片3D压电传感器–FeFET的近传感器模拟计算用于触觉传感系统
errAdvanced Functional Materials
IF19
err2025-08-14
err0
PREAI
errWoongjin Kim; Seungyeob Kim; Jinwook Ha; Taeseung Jung; Yunjeong Kim; Jinho Ahn; Sanghun Jeon
err分享
err收藏
Enhancing Program Speed and Diminishing Read After Write Delay by Metal Work Function Engineering通过金属功函数工程提升程序速度并减小写后读延迟
errIEEE Electron Device Letters
IF4.5
err2025-08-01
err0
PREAI
errSeokjoong Shin; Giuk Kim; Hyojun Choi; Sanghyun Park; Kwangyou Seo; Kwangsoo Kim; Wanki Kim; Daewon Ha; Jinho Ahn; Sanghun Jeon
err分享
err收藏
Very high frequency (∼100 MHz) plasma enhanced atomic layer deposition high-κ hafnium zirconium oxide capacitors near morphotropic phase boundary with low current density & high-κ for DRAM technology
errJOURNAL OF MATERIALS CHEMISTRY C
IF5.1
err2025-01-01
err0
errOAAI
errYang, Ketong; Shin, Hunbeom; Kim, Seungyeob; Jung, Taeseung; Jeon, Sanghun
err分享
err收藏
Damage mitigation as a strategy to achieve high ferroelectricity and reliability in hafnia for random-access-memory
errJOURNAL OF MATERIALS CHEMISTRY C
IF5.1
err2025-01-01
err0
PREAI
errHwang, Junghyeon; Shin, Hunbeom; Kim, Chaeheon; Ahn, Jinho; Jeon, Sanghun
err分享
err收藏
Enhanced performance of hafnia self-rectifying ferroelectric tunnel junctions at cryogenic temperatures哈夫尼亚自整流铁电隧道结在低温下的增强性能
errNANO CONVERGENCE
IF11
err2024-12-16
err0
errOAAI
errHwang, Junghyeon; Kim, Chaeheon; Ahn, Jinho; Jeon, Sanghun
err分享
err收藏
Design of Physically Unclonable Function Using Ferroelectric FET With Auto Write-Back Technique for Resource-Limited IoT Security
errIEEE INTERNET OF THINGS JOURNAL
IF8.9
err2024-08-15
err0
PREAI
errLim, Sehee; Hwang, Junghyeon; Ko, Dong Han; Kim, Se Keon; Oh, Tae Woo; Jeon, Sanghun; Jung, Seong-Ook
err分享
err收藏
Monolithic three-dimensional hafnia-based artificial nerve system基于hafnia的单片三维人工神经系统
errNANO ENERGY
IF17.1
err2024-07-01
err2
PREAI
errJung, Minhyun; Kim, Seungyeob; Hwang, Junghyeon; Kim, Chaeheon; Kim, Hye Jin; Kim, Yun-Jeong; Jeon, Sanghun
err分享
err收藏
Effect of Annealing Temperature on Minimum Domain Size of Ferroelectric Hafnia退火温度对铁电氧化铪最小畴尺寸的影响
errACS APPLIED ELECTRONIC MATERIALS
IF4.7
err2024-03-22
err4
errOAAI
errYun, Seokjung; Kim, Hoon; Seo, Myungsoo; Kang, Min-Ho; Kim, Taeho; Cho, Seongwoo; Park, Min Hyuk; Jeon, Sanghun; Choi, Yang-Kyu; Hong, Seungbum
err分享
err收藏
Monolithically Integrated Complementary Ferroelectric FET XNOR Synapse for the Binary Neural Network
errACS APPLIED MATERIALS & INTERFACES
IF8.2
err2024-01-04
err8
PREAI
errHwang, Junghyeon; Joh, Hongrae; Kim, Chaeheon; Ahn, Jinho; Jeon, Sanghun
err分享
err收藏
Dual-port ferroelectric NAND flash memory for large memory window, QLC programmable and disturbance-free operations
errJOURNAL OF MATERIALS CHEMISTRY C
IF5.1
err2024-01-01
err0
PREAI
errJoh, Hongrae; Lee, Sangho; Ahn, Jinho; Jeon, Sanghun
err分享
err收藏
A six-level ferroelectric storage cell based on a bidirectional imprint field
errJOURNAL OF MATERIALS CHEMISTRY C
IF5.1
err2024-01-01
err1
PREAI
errKim, Chaeheon; Hwang, Junghyeon; Shin, Hunbeom; Ahn, Jinho; Jeon, Sanghun
err分享
err收藏
Three-terminal vertical ferroelectric synaptic barristor enabled by HZO/graphene heterostructure with rebound depolarization具有回弹去极化的HZO/石墨烯异质结构实现的三端垂直铁电突触barristor
errJOURNAL OF ALLOYS AND COMPOUNDS
IF6.3
err2023-11-01
err2
PREAI
errJang, Seonghoon; Kim, Yongjun; Jeon, Jihoon; Ham, Seonggil; Choi, Sanghyeon; Yang, Jehyeon; Kim, Seong Keun; Jeon, Sanghun; Jang, Jingon; Wang, Gunuk
err分享
err收藏
Ferroelectric Hafnia-Based M3D FeTFTs Annealed at Extremely Low Temperatures and TCAM Cells for Computing-in-Memory Applications在极低温度下退火的基于铁电Hafnia的M3D fetft和用于内存计算应用的TCAM单元
errACS APPLIED MATERIALS & INTERFACES
IF8.2
err2023-10-24
err3
PREAI
errJoh, Hongrae; Nam, Sooji; Jung, Minhyun; Shin, Hunbeom; Cho, Sung Haeng; Jeon, Sanghun
err分享
err收藏

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