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Lanxia Cheng

university of texas system

H指数:21

被引数:2,550

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Ambipolar Gate Modulation Technique for the Reduction of Offset and Flicker Noise in Graphene Hall-Effect Sensors

IEEE SENSORS JOURNAL

IF4.5

2021-11-153

PREAI

ALD Heterojunction Ovonic Threshold Switches

ACS APPLIED ELECTRONIC MATERIALS

IF4.7

2020-12-019

PREAI

Atomic Layer Deposition of Layered Boron Nitride for Large-Area 2D Electronics

用于大面积二维电子的层状氮化硼的原子层沉积

ACS APPLIED MATERIALS & INTERFACES

IF8.2

2020-07-1525

PREAI

Composition-Controlled Atomic Layer Deposition of Phase-Change Memories and Ovonic Threshold Switches with High Performance

高性能相变存储器和双向阈值开关的成分控制原子层沉积

IF16

2019-09-0432

PREAI

Investigation of the Physical Properties of Plasma Enhanced Atomic Layer Deposited Silicon Nitride as Etch Stopper

等离子体增强原子层沉积氮化硅作为刻蚀阻挡层的物理性能研究

ACS APPLIED MATERIALS & INTERFACES

IF8.2

2018-11-2832

PREAI

High-Mobility Helical Tellurium Field-Effect Transistors Enabled by Transfer-Free, Low-Temperature Direct Growth

通过无转移低温直接生长实现的高迁移率螺旋碲场效应晶体管

ADVANCED MATERIALS

IF26.8

2018-07-1886

PREAI

Combustion,Synthesis of p-Type Transparent Conducting CuCrO2+x and Cu:CrOx Thin Films at 180 °C

ACS APPLIED MATERIALS & INTERFACES

IF8.2

2018-01-1829

PREAI

Defects and Surface Structural Stability of MoTe2 Under Vacuum Annealing

MoTe2在真空退火下的缺陷和表面结构稳定性

IF16

2017-11-14138

PREAI

Inverted OPVs with MoS2 hole transport layer deposited by spray coating

MATERIALS TODAY ENERGY

IF8.6

2017-09-016

OAAI

Sub-10 nm Tunable Hybrid Dielectric Engineering on MoS2 for Two-Dimensional Material-Based Devices

IF16

2017-08-3035

PREAI

Solution synthesis of few-layer 2H MX2 (M = Mo, W; X = S, Se)

JOURNAL OF MATERIALS CHEMISTRY C

IF5.1

2017-01-0137

PREAI

Role of Hydrogen Bonding in the Formation of Adenine Chains on Cu(110) Surfaces

氢键在Cu(110) 表面腺嘌呤链形成中的作用

IF3.2

2016-12-165

OAAI

Atomic Layer Deposition of Silicon Nitride Thin Films: A Review of Recent Progress, Challenges, and Outlooks

氮化硅薄膜的原子层沉积: 最新进展，挑战和展望

IF3.2

2016-12-12188

OAAI

Covalent Nitrogen Doping and Compressive Strain in MoS2 by Remote N2 Plasma Exposure

IF9.1

2016-08-09372

OAAI

Remote Plasma Oxidation and Atomic Layer Etching of MoS2

MoS2的远程等离子体氧化和原子层刻蚀

ACS APPLIED MATERIALS & INTERFACES

IF8.2

2016-07-14179

PREAI

Partially Fluorinated Graphene: Structural and Electrical Characterization

部分氟化石墨烯: 结构和电学表征

ACS APPLIED MATERIALS & INTERFACES

IF8.2

2016-02-1093

PREAI

Organic-inorganic hybrid semiconductor thin films deposited using molecular-atomic layer deposition (MALD)

JOURNAL OF MATERIALS CHEMISTRY C

IF5.1

2016-01-0114

PREAI

Structural Changes in Self-Catalyzed Adsorption of Carbon Monoxide on 1,4-Phenylene Diisocyanide Modified Au(111)

JOURNAL OF PHYSICAL CHEMISTRY C

IF3.2

2015-08-0512

OA

Al2O3 on Black Phosphorus by Atomic Layer Deposition: An in Situ Interface Study

通过原子层沉积在黑磷上的Al2O3: 原位界面研究

ACS APPLIED MATERIALS & INTERFACES

IF8.2

2015-06-0891

PREAI

Hydroquinone-ZnO nano-laminate deposited by molecular-atomic layer deposition

APPLIED PHYSICS LETTERS

IF3.6

2015-03-2519

PREAI