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G

Gaëlle Antoun

orléans university-cnrs

7H指数
33论文数
155被引数
收录论文 5
发表时间
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Chemistry in Cryogenic Etching: A Tutorial低温蚀刻中的化学：一个教程
errPlasma Chemistry and Plasma Processing
IF2.5
err2025-12-11
err0
PREAI
errRemi Dussart; Gaelle Antoun; Thomas Tillocher; Loic Becerra; Philippe Lefaucheux
err分享
err收藏
Mechanism understanding in cryo atomic layer etching of SiO2 based upon C4F8 physisorption (vol 12, 1979, 2021)
errSCIENTIFIC REPORTS
IF3.9
err2022-02-01
err0
errOAAI
errAntoun, G.; Tillocher, T.; Lefaucheux, P.; Faguet, J.; Maekawa, K.; Dussart, R.
err分享
err收藏
Comparison between Bosch and STiGer Processes for Deep Silicon Etching
errMICROMACHINES
IF3
err2021-09-23
err9
errOAAI
errTillocher, Thomas; Nos, Jack; Antoun, Gaelle; Lefaucheux, Philippe; Boufnichel, Mohamed; Dussart, Remi
err分享
err收藏
Mechanism understanding in cryo atomic layer etching of SiO2 based upon C4F8 physisorption
errSCIENTIFIC REPORTS
IF3.9
err2021-01-11
err21
errOAAI
errAntoun, G.; Tillocher, T.; Lefaucheux, P.; Faguet, J.; Maekawa, K.; Dussart, R.
err分享
err收藏
Cryo atomic layer etching of SiO2 by C4F8 physisorption followed by Ar plasma
errAPPLIED PHYSICS LETTERS
IF3.6
err2019-10-10
err22
PREAI
errAntoun, G.; Lefaucheux, P.; Tillocher, T.; Dussart, R.; Yamazaki, K.; Yatsuda, K.; Faguet, J.; Maekawa, K.
err分享
err收藏

研究方向

暂时未获取到该数据
合作学者
合作期刊
K
Katsumi Yamazaki
H 指数: 32 · 论文数: 208
R
Rémi Dussart
H 指数: 26 · 论文数: 361
P
Philippe Lefaucheux
H 指数: 22 · 论文数: 251
T
Thomas Tillocher
H 指数: 22 · 论文数: 200
M
Mohamed Boufnichel
H 指数: 18 · 论文数: 84
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