Mohamed Boufnichel - Publications, H-index & Citations

Mohamed Boufnichel

stmicroelectronics

18H指数

84论文数

1.3K被引数

收录论文 8

发表时间

Comparison between Bosch and STiGer Processes for Deep Silicon Etching

MICROMACHINES

IF3

2021-09-23

OAAI

Tillocher, Thomas; Nos, Jack; Antoun, Gaelle; Lefaucheux, Philippe; Boufnichel, Mohamed; Dussart, Remi

Modeling of C4F8 inductively coupled plasmas: effects of high RF power on the plasma electrical properties

PLASMA SOURCES SCIENCE & TECHNOLOGY

IF3.3

2019-08-08

PREAI

Le Dain, Guillaume; Rhallabi, Ahmed; Girard, Aurelie; Cardinaud, Christophe; Roqueta, Fabrice; Boufnichel, Mohamed

Morphology control in thin films of PS: PLA homopolymer blends by dip-coating deposition 通过浸涂沉积控制PS: PLA均聚物共混物薄膜的形态

APPLIED SURFACE SCIENCE

IF6.9

2017-01-01

OAAI

Vital, Alexane; Vayer, Marylene; Tillocher, Thomas; Dussart, Remi; Boufnichel, Mohamed; Sinturel, Christophe

Parametric study of STiGer etching process in order to reduce extended formation of scalloping defects on the sidewalls of silicon submicron trenches

VACUUM

IF3.9

2016-11-01

PREAI

Kafrouni, W.; Tillocher, T.; Ladroue, J.; Lefaucheux, P.; Boufnichel, M.; Ranson, P.; Dussart, R.

SF6 and C4F8 global kinetic models coupled to sheath models

PLASMA SOURCES SCIENCE & TECHNOLOGY

IF3.3

2014-10-20

PREAI

Haidar, Yehya; Pateau, Amand; Rhallabi, Ahmed; Fernandez, Marie Claude; Mokrani, Arezki; Taher, Fadia; Roqueta, Fabrice; Boufnichel, Mohamed

Plasma cryogenic etching of silicon: from the early days to today's advanced technologies 硅的等离子体低温蚀刻: 从早期到今天的先进技术

JOURNAL OF PHYSICS D-APPLIED PHYSICS

IF3.2

2014-03-06

148

PREAI

Dussart, R.; Tillocher, T.; Lefaucheux, P.; Boufnichel, M.

In situ x-ray photoelectron spectroscopy analysis of SiOxFy passivation layer obtained in a SF6/O2 cryoetching process

APPLIED PHYSICS LETTERS

IF3.6

2009-02-18

PREAI

Pereira, J.; Pichon, L. E.; Dussart, R.; Cardinaud, C.; Duluard, C. Y.; Oubensaid, E. H.; Lefaucheux, P.; Boufnichel, M.; Ranson, P.

Two cryogenic processes involving SF6, O2, and SiF4 for silicon deep etching

JOURNAL OF THE ELECTROCHEMICAL SOCIETY

IF3.3

2008-01-01

PREAI

Tillocher, T.; Dussart, R.; Overzet, L. J.; Mellhaoui, X.; Lefaucheux, P.; Boufnichel, M.; Ranson, P.

研究方向