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Philippe Lefaucheux

centre national de la recherche scientifique (cnrs)

22H指数
251论文数
1.7K被引数
收录论文 25
发表时间
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Chemistry in Cryogenic Etching: A Tutorial低温蚀刻中的化学：一个教程
errPlasma Chemistry and Plasma Processing
IF2.5
err2025-12-11
err0
PREAI
errRemi Dussart; Gaelle Antoun; Thomas Tillocher; Loic Becerra; Philippe Lefaucheux
err分享
err收藏
Black silicon microstructuring via plasma cryogenic etching for microfluidic applications in geoscience通过等离子体低温蚀刻进行黑硅微结构化，用于地球科学中的微流体应用
errJOURNAL OF MICROMECHANICS AND MICROENGINEERING
IF2.1
err2025-10-31
err0
PREAI
errRahali, A.; Stolz, A.; Lefaucheux, P.; Becerra, L.; Dussart, R.; Tillocher, T.
err分享
err收藏
Cryogenic cyclical etching of Si using CF4 plasma passivation steps: The role of CF radicals
errAPPLIED PHYSICS LETTERS
IF3.6
err2025-01-21
err1
errOAAI
errNos, Jack; Iseni, Sylvain; Kogelschatz, Martin; Cunge, Gilles; Lefaucheux, Philippe; Dussart, Remi; Tillocher, Thomas; Despiau-Pujo, Emilie
err分享
err收藏
Discharge characteristics of silicon-based DC Helium microplasmas: comparison between Through Silicon Via and closed cavity type micro-reactors
errPLASMA SOURCES SCIENCE & TECHNOLOGY
IF3.3
err2024-11-05
err0
PREAI
errKouadou, E.; Iseni, S.; Stolz, A.; Lefaucheux, P.; Dussart, R.
err分享
err收藏
Mechanism understanding in cryo atomic layer etching of SiO2 based upon C4F8 physisorption (vol 12, 1979, 2021)
errSCIENTIFIC REPORTS
IF3.9
err2022-02-01
err0
errOAAI
errAntoun, G.; Tillocher, T.; Lefaucheux, P.; Faguet, J.; Maekawa, K.; Dussart, R.
err分享
err收藏
Comparison between Bosch and STiGer Processes for Deep Silicon Etching
errMICROMACHINES
IF3
err2021-09-23
err9
errOAAI
errTillocher, Thomas; Nos, Jack; Antoun, Gaelle; Lefaucheux, Philippe; Boufnichel, Mohamed; Dussart, Remi
err分享
err收藏
Mechanism understanding in cryo atomic layer etching of SiO2 based upon C4F8 physisorption
errSCIENTIFIC REPORTS
IF3.9
err2021-01-11
err21
errOAAI
errAntoun, G.; Tillocher, T.; Lefaucheux, P.; Faguet, J.; Maekawa, K.; Dussart, R.
err分享
err收藏
Cryo atomic layer etching of SiO2 by C4F8 physisorption followed by Ar plasma
errAPPLIED PHYSICS LETTERS
IF3.6
err2019-10-10
err22
PREAI
errAntoun, G.; Lefaucheux, P.; Tillocher, T.; Dussart, R.; Yamazaki, K.; Yatsuda, K.; Faguet, J.; Maekawa, K.
err分享
err收藏
Low-k integration: Gas screening for cryogenic etching and plasma damage mitigation
errFRONTIERS OF CHEMICAL SCIENCE AND ENGINEERING
IF4.5
err2019-07-24
err4
PREAI
errChanson, Romain; Dussart, Remi; Tillocher, Thomas; Lefaucheux, P.; Dussarrat, Christian; de Marneffe, Jean Francois
err分享
err收藏
On the validity of neutral gas temperature by emission spectroscopy in micro-discharges close to atmospheric pressure
errPLASMA SOURCES SCIENCE & TECHNOLOGY
IF3.3
err2019-05-31
err9
errOAAI
errIseni, S.; Michaud, R.; Lefaucheux, P.; Sretenovic, G. B.; Schulz-von der Gathen, V; Dussart, R.
err分享
err收藏
Direct current microhollow cathode discharges on silicon devices operating in argon and helium
errPLASMA SOURCES SCIENCE & TECHNOLOGY
IF3.3
err2018-02-06
err12
PREAI
errMichaud, R.; Felix, V.; Stolz, A.; Aubry, O.; Lefaucheux, P.; Dzikowski, S.; Schulz-von der Gathen, V.; Overzet, L. J.; Dussart, R.
err分享
err收藏
Damage-free plasma etching of porous organo-silicate low-k using micro-capillary condensation above-50 °C
errSCIENTIFIC REPORTS
IF3.9
err2018-01-30
err19
errOAAI
errChanson, R.; Zhang, L.; Naumov, S.; Mankelevich, Yu. A.; Tillocher, T.; Lefaucheux, P.; Dussart, R.; De Gendt, S.; de Marneffe, J. -F.
err分享
err收藏
Parametric study of STiGer etching process in order to reduce extended formation of scalloping defects on the sidewalls of silicon submicron trenches
errVACUUM
IF3.9
err2016-11-01
err2
PREAI
errKafrouni, W.; Tillocher, T.; Ladroue, J.; Lefaucheux, P.; Boufnichel, M.; Ranson, P.; Dussart, R.
err分享
err收藏
Mitigation of plasma-induced damage in porous low-k dielectrics by cryogenic precursor condensation
errJOURNAL OF PHYSICS D-APPLIED PHYSICS
IF3.2
err2016-04-01
err6
PREAI
errZhang, Liping; de Marneffe, Jean-Francois; Leroy, Floriane; Lefaucheux, Philippe; Tillocher, Thomas; Dussart, Remi; Maekawa, Kaoru; Yatsuda, Koichi; Dussarrat, Christian; Goodyear, Andy; Cooke, Mike; De Gendt, Stefan; Baklanov, Mikhail R.
err分享
err收藏
Origin of microplasma instabilities during DC operation of silicon based microhollow cathode devices硅基微空心阴极器件直流运行过程中微等离子体不稳定性的起源
errPLASMA SOURCES SCIENCE & TECHNOLOGY
IF3.3
err2016-03-04
err7
PREAI
errFelix, Valentin; Lefaucheux, Philippe; Aubry, Olivier; Golda, Judith; Schulz-von der Gathen, Volker; Overzet, Lawrence J.; Dussart, Remi
err分享
err收藏
Cryogenic etching processes applied to porous low-k materials using SF6/C4F8 plasmas
errJOURNAL OF PHYSICS D-APPLIED PHYSICS
IF3.2
err2015-09-30
err18
PREAI
errLeroy, F.; Zhang, L.; Tillocher, T.; Yatsuda, K.; Maekawa, K.; Nishimura, E.; Lefaucheux, P.; de Marneffe, J-F; Baklanov, M. R.; Dussart, R.
err分享
err收藏
Polymer masks for structured surface and plasma etching
errAPPLIED SURFACE SCIENCE
IF6.9
err2015-03-01
err14
PREAI
errVital, Alexane; Vayer, Marylene; Sinturel, Christophe; Tillocher, Thomas; Lefaucheux, Philippe; Dussart, Remi
err分享
err收藏
Plasma cryogenic etching of silicon: from the early days to today's advanced technologies硅的等离子体低温蚀刻: 从早期到今天的先进技术
errJOURNAL OF PHYSICS D-APPLIED PHYSICS
IF3.2
err2014-03-06
err148
PREAI
errDussart, R.; Tillocher, T.; Lefaucheux, P.; Boufnichel, M.
err分享
err收藏
Study of dc micro-discharge arrays made in silicon using CMOS compatible technology
errJOURNAL OF PHYSICS D-APPLIED PHYSICS
IF3.2
err2012-06-28
err22
PREAI
errKulsreshath, M. K.; Schwaederle, L.; Overzet, L. J.; Lefaucheux, P.; Ladroue, J.; Tillocher, T.; Aubry, O.; Woytasik, M.; Schelcher, G.; Dussart, R.
err分享
err收藏
Breakdown study of dc silicon micro-discharge devices
errJOURNAL OF PHYSICS D-APPLIED PHYSICS
IF3.2
err2012-01-30
err18
errOAAI
errSchwaederle, L.; Kulsreshath, M. K.; Overzet, L. J.; Lefaucheux, P.; Tillocher, T.; Dussart, R.
err分享
err收藏

研究方向

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合作学者
合作期刊
S
Stefan De Gendt
H 指数: 52 · 论文数: 1.0K
M
Mikhaı̈l R. Baklanov
H 指数: 44 · 论文数: 539
V
Volker Schulz-von der Gathen
H 指数: 40 · 论文数: 216
M
M. Puech
H 指数: 38 · 论文数: 292
Y
Yu. A. Mankelevich
H 指数: 37 · 论文数: 215
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