Menno J. Kappers - Publications, H-index & Citations

Menno J. Kappers

university of cambridge

49H指数

384论文数

8.2K被引数

收录论文 93

发表时间

The impact of dislocation-mediated etching on the structure of porous GaN 位错介导的腐蚀对多孔GaN结构的影响

Journal of Applied Physics

IF2.5

2026-05-07

PREAI

Zhang, Jiawei; Thornley, Ben; Harris-Lee, Thom R.; Dar, Sidra A.; Kappers, Menno J.; Oliver, Rachel A.

Effect of buffer layer thickness on recombination in zincblende InGaN/GaN quantum wells 缓冲层厚度对闪锌矿InGaN/GaN量子阱中复合的影响

Journal of Physics D: Applied Physics

IF3.2

2025-11-18

OAAI

X Xu; D Dyer; M Frentrup; W R Fieldhouse-Allen; M J Kappers; G Kusch; D J Wallis; R A Oliver; D J Binks

Porous GaN: Anion-Specific Electrochemical Etching Mechanisms and Morphological Control 多孔GaN：阴离子特定的电化学腐蚀机理与形貌控制

ACS Applied Materials and Interfaces

IF8.2

2025-11-01

PREAI

Harris-Lee, Thom R.; Thornley, Ben; Zhang, Jiawei; Kappers, Menno J.; Oliver, Rachel A.

Beyond transmission electron microscopy imaging: Atom probe tomography reveals chemical inhomogeneity at stacking fault interfaces in InGaN/GaN light-emitting diodes 超越透射电子显微镜成像：原子探针断层术揭示了InGaN/GaN发光二极管中堆垛层错界面处的化学不均匀性

MATERIALIA

IF2.9

2025-05-01

OAAI

Shu, Ruiying; Oliver, Rachel A.; Frentrup, Martin; Kappers, Menno J.; Xiu, Huixin; Kusch, Gunnar; Wallis, David J.; Hofer, Christina; Bagot, Paul A. J.; Moody, Michael P.

Behaviour of Ti/Al/Ti/Au contacts to AlGaN/GaN heterostructures at low temperature

JOURNAL OF PHYSICS D-APPLIED PHYSICS

IF3.2

2025-02-13

PREAI

Adams, Francesca; Ghosh, Saptarsi; Liang, Zhida; Chen, Chen; Suphannarat, Noppasorn; Kappers, Menno J.; Wallis, David J.; Oliver, Rachel A.

Recombination efficiency in c-plane (In,Ga)N/GaN quantum wells: saturation of localisation sites versus Auger-Meitner recombination

JOURNAL OF PHYSICS D-APPLIED PHYSICS

IF3.2

2024-11-06

PREAI

Barrett, R. M.; Dyer, D. D.; McMahon, J. M.; Schulz, S.; Kappers, M. J.; Oliver, R. A.; Binks, D.

Impact of stacking faults on the luminescence of a zincblende InGaN/GaN single quantum well

JOURNAL OF PHYSICS D-APPLIED PHYSICS

IF3.2

2024-10-24

PREAI

Gundimeda, Abhiram; Kusch, Gunnar; Frentrup, Martin; Xiu, Huixin; Shu, Ruiying; Hofer, Christina; Bagot, Paul A. J.; Moody, Michael P.; Kappers, Menno J.; Wallis, David J.; Oliver, Rachel A.

Room temperature quantum emitters in aluminum nitride epilayers on silicon

APPLIED PHYSICS LETTERS

IF3.6

2024-06-10

OAAI

Cannon, Joseph K.; Bishop, Sam G.; Eggleton, Katie M.; Yagci, Huseyin B.; Clark, Rachel N.; Ibrahim, Sherif R.; Hadden, John P.; Ghosh, Saptarsi; Kappers, Menno J.; Oliver, Rachel A.; Bennett, Anthony J.

Threshold voltage mapping at the nanoscale of GaN-based high electron mobility transistor structures using hyperspectral scanning capacitance microscopy

APPLIED PHYSICS LETTERS

IF3.6

2024-06-07

OAAI

Chen, Chen; Ghosh, Saptarsi; De Wolf, Peter; Liang, Zhida; Adams, Francesca; Kappers, Menno J.; Wallis, David J.; Oliver, Rachel A.

Crystal-field analysis of photoluminescence from orthorhombic Eu centers and energy transfer from host to Eu in GaN co-doped with Mg and Eu

JOURNAL OF LUMINESCENCE

IF3.6

2024-06-01

PREAI

Yamaga, Mitsuo; Singh, Akhilesh K.; Cameron, Douglas; Edwards, Paul R.; Lorenz, Katharina; Kappers, Menno J.; Bockowski, Michal

Additive GaN Solid Immersion Lenses for Enhanced Photon Extraction Efficiency from Diamond Color Centers

ACS PHOTONICS

IF6.7

2023-08-30

OAAI

Cheng, Xingrui; Wessling, Nils Kolja; Ghosh, Saptarsi; Kirkpatrick, Andrew R.; Kappers, Menno J.; Lekhai, Yashna N. D.; Morley, Gavin W.; Oliver, Rachel A.; Smith, Jason M.; Dawson, Martin D.; Salter, Patrick S.; Strain, Michael J.

Disentangling the Impact of Point Defect Density and Carrier Localization-Enhanced Auger Recombination on Efficiency Droop in (In,Ga)N/GaN Quantum Wells

ACS PHOTONICS

IF6.7

2023-07-19

OAAI

Barrett, R. M.; McMahon, J. M.; Ahumada-Lazo, R.; Alanis, J. A.; Parkinson, P.; Schulz, S.; Kappers, M. J.; Oliver, R. A.; Binks, D.

Direct evidence of Be as an amphoteric dopant in GaN

PHYSICAL REVIEW B

IF3.7

2022-05-27

OAAI

Wahl, U.; Correia, J. G.; Costa, A. R. G.; Lima, T. A. L.; Moens, J.; Kappers, M. J.; Silva, M. R. da; Pereira, L. M. C.; Vantomme, A.

Photocurrent detection of radially polarized optical vortex with hot electrons in Au/GaN

APPLIED PHYSICS LETTERS

IF3.6

2022-05-16

OAAI

Hou, Yaonan; Kappers, Menno; Jin, Chaoyuan; Oliver, Rachel

Influence of Al x Ga1-x N nucleation layers on MOVPE-grown zincblende GaN epilayers on 3C-SiC/Si(001)

JOURNAL OF PHYSICS D-APPLIED PHYSICS

IF3.2

2022-02-02

OAAI

Gundimeda, Abhiram; Rostami, Mohammadreza; Frentrup, Martin; Hinz, Alexander; Kappers, Menno J.; Wallis, David J.; Oliver, Rachel A.

Characterization of buried interfaces using Ga Kα hard X-ray photoelectron spectroscopy (HAXPES)

FARADAY DISCUSSIONS

IF3.1

2022-01-01

OAAI

Spencer, B. F.; Church, S. A.; Thompson, P.; Cant, D. J. H.; Maniyarasu, S.; Theodosiou, A.; Jones, A. N.; Kappers, M. J.; Binks, D. J.; Oliver, R. A.; Higgins, J.; Thomas, A. G.; Thomson, T.; Shard, A. G.; Flavell, W. R.

Carrier dynamics at trench defects in InGaN/GaN quantum wells revealed by time-resolved cathodoluminescence

NANOSCALE

IF5.1

2022-01-01

OAAI

Kusch, Gunnar; Comish, Ella J.; Loeto, Kagiso; Hammersley, Simon; Kappers, Menno J.; Dawson, Phil; Oliver, Rachel A.; Massabuau, Fabien C-P

Advanced Transfer Printing With In-Situ Optical Monitoring for the Integration of Micron-Scale Devices

IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS

IF5.1

2022-01-01

OAAI

Guilhabert, Benoit; Bommer, Sean P.; Wessling, Nils K.; Jevtics, Dimitars; Smith, Jack A.; Xia, Zhongyi; Ghosh, Saptarsi; Kappers, Menno; Watson, Ian M.; Oliver, Rachel A.; Dawson, Martin D.; Strain, Michael J.

Effect of Si-doped InGaN underlayers on photoluminescence efficiency and recombination dynamics in InGaN/GaN quantum wells

JOURNAL OF PHYSICS D-APPLIED PHYSICS

IF3.2

2021-09-10

OAAI

Church, S. A.; Christian, G. M.; Barrett, R. M.; Hammersley, S.; Kappers, M. J.; Frentrup, M.; Oliver, R. A.; Binks, D. J.

Combined SEM-CL and STEM investigation of green InGaN quantum wells

JOURNAL OF PHYSICS D-APPLIED PHYSICS

IF3.2

2021-02-05

OAAI

Ding, B.; Jarman, J.; Kappers, M. J.; Oliver, R. A.

研究方向