M. Porti - Publications, H-index & Citations

M. Porti

electronic engineering department

27H指数

146论文数

3.0K被引数

收录论文 23

发表时间

Comprehensive statistical analysis of random telegraph noise: Impact of gate voltage, temperature, and Bias time 随机电报噪声的全面统计分析：栅极电压、温度和偏压时间的影响

Microelectronic Engineering

IF3.1

2025-12-13

PREAI

J. Martin-Martinez; N. Baghban-Bousari; R. Castro-Lopez; D. Eric; E. Roca; R. Rodriguez; M. Porti; F.V. Fernandez; M. Nafria

A statistical characterization of dielectric breakdown in FDSOI nanowire transistors FDSOI纳米线晶体管中电介质击穿的统计表征

Microelectronic Engineering

IF3.1

2025-10-06

OAAI

R. Goyal; A. Crespo-Yepes; M. Porti; R. Rodriguez; M. Nafria

Feasibility of Physical Unclonable Functions from Pre-stressed Organic Thin Film Transistors for Secure Microelectronics 基于预应力有机薄膜晶体管的物理不可克隆函数在安全微电子中的可行性

Microelectronic Engineering

IF3.1

2025-09-17

OAAI

N. Baghban-Bousari; D. Eric; G. Palau; A. Crespo-Yepes; M. Porti; E. Ramon; S. Ogier; M. Nafria

Physical Unclonable Functions Based on the Post-Breakdown Current of FDSOI Nanowire Transistors 基于FDSOI纳米线晶体管击穿后电流的物理不可克隆函数

IEEE Electron Device Letters

IF4.5

2025-08-01

PREAI

Rishab Goyal; Marc Porti; Albert Crespo-Yepes; Montserrat Nafria

Reliability Assessment of Optical Physical Unclonable Functions Based on the Spatial Distribution of Catastrophic Failure Sites in MIM Structures

IEEE ACCESS

IF3.6

2025-01-01

OAAI

Porti, Marc; Solis, Alvaro; Calatayud, Alex; Nafria, Montserrat; Miranda, Enrique

On the Aging of OTFTs and Its Impact on PUFs Reliability

MICROMACHINES

IF3

2024-03-26

OAAI

Porti, Marc; Palau, Gerard; Crespo-Yepes, Albert; Rus, August Arnal; Ogier, Simon; Ramon, Eloi; Nafria, Montserrat

Methodology for the Simulation of the Variability of MOSFETs With Polycrystalline High-k Dielectrics Using CAFM Input Data

IEEE ACCESS

IF3.6

2021-01-01

OAAI

Ruiz, A.; Couso, C.; Seoane, N.; Porti, M.; Garcia-Loureiro, A. J.; Nafria, M.

Low-Power, High-Performance, Non-volatile Inkjet-Printed HfO2-Based Resistive Random Access Memory: From Device to Nanoscale Characterization

ACS APPLIED MATERIALS & INTERFACES

IF8.2

2019-06-10

OAAI

Vescio, Giovanni; Martin, Gemma; Crespo-Yepes, Albert; Claramunt, Sergi; Alonso, Daniel; Lopez-Vidrier, Julian; Estrade, Sonia; Porti, Marc; Rodriguez, Rosana; Peiro, Francesca; Cornet, Albert; Cirera, Albert; Nafria, Montserrat

Workfunction fluctuations in polycrystalline TiN observed with KPFM and their impact on MOSFETs variability

APPLIED PHYSICS LETTERS

IF3.6

2019-03-05

OAAI

Ruiz, A.; Seoane, N.; Claramunt, S.; Garcia-Loureiro, A.; Porti, M.; Couso, C.; Martin-Martinez, J.; Nafria, M.

Electrical and mechanical performance of graphene sheets exposed to oxidative environments

NANO RESEARCH

IF9

2013-05-21

PREAI

Lanza, Mario; Wang, Yan; Gao, Teng; Bayerl, Albin; Porti, Marc; Nafria, Montserrat; Zhou, Yangbo; Jing, Guangyin; Zhang, Yanfeng; Liu, Zhongfan; Yu, Dapeng; Duan, Huiling

Graphene-Coated Atomic Force Microscope Tips for Reliable Nanoscale Electrical Characterization

ADVANCED MATERIALS

IF26.8

2012-12-27

PREAI

Lanza, M.; Bayerl, A.; Gao, T.; Porti, M.; Nafria, M.; Jing, G. Y.; Zhang, Y. F.; Liu, Z. F.; Duan, H. L.

Resistive switching in hafnium dioxide layers: Local phenomenon at grain boundaries

APPLIED PHYSICS LETTERS

IF3.6

2012-11-06

159

OAAI

Lanza, M.; Bersuker, G.; Porti, M.; Miranda, E.; Nafria, M.; Aymerich, X.

Gate current analysis of AlGaN/GaN on silicon heterojunction transistors at the nanoscale

APPLIED PHYSICS LETTERS

IF3.6

2012-08-27

OAAI

Fontsere, A.; Perez-Tomas, A.; Placidi, M.; Llobet, J.; Baron, N.; Chenot, S.; Cordier, Y.; Moreno, J. C.; Iglesias, V.; Porti, M.; Bayerl, A.; Lanza, M.; Nafria, M.

Grain boundaries as preferential sites for resistive switching in the HfO2 resistive random access memory structures 晶界是HfO2电阻式随机存取存储器结构中电阻开关的优先位置

APPLIED PHYSICS LETTERS

IF3.6

2012-03-23

186

OAAI

Lanza, M.; Zhang, K.; Porti, M.; Nafria, M.; Shen, Z. Y.; Liu, L. F.; Kang, J. F.; Gilmer, D.; Bersuker, G.

Dielectric Breakdown In Ultra-Thin Hf Based Gate Stacks: A Resistive Switching Phenomenon

JOURNAL OF THE ELECTROCHEMICAL SOCIETY

IF3.3

2012-01-01

OAAI

Rodriguez, R.; Martin-Martinez, J.; Crespo-Yepes, A.; Porti, M.; Nafria, M.; Aymerich, X.

Degradation of polycrystalline HfO2-based gate dielectrics under nanoscale electrical stress (vol 99, 103510, 2011)

APPLIED PHYSICS LETTERS

IF3.6

2011-12-06

OAAI

Iglesias, V.; Lanza, M.; Zhang, K.; Bayerl, A.; Porti, M.; Nafria, M.; Aymerich, X.; Benstetter, G.; Shen, Z. Y.; Bersuker, G.

Micro and nano analysis of 0.2 Ω mm Ti/Al/Ni/Au ohmic contact to AlGaN/GaN

APPLIED PHYSICS LETTERS

IF3.6

2011-11-21

PREAI

Fontsere, A.; Perez-Tomas, A.; Placidi, M.; Llobet, J.; Baron, N.; Chenot, S.; Cordier, Y.; Moreno, J. C.; Gammon, P. M.; Jennings, M. R.; Porti, M.; Bayerl, A.; Lanza, M.; Nafria, M.

Degradation of polycrystalline HfO2-based gate dielectrics under nanoscale electrical stress 纳米尺度电应力下多晶HfO2-based栅介质的退化

APPLIED PHYSICS LETTERS

IF3.6

2011-09-05

OAAI

Iglesias, V.; Lanza, M.; Zhang, K.; Bayerl, A.; Porti, M.; Nafria, M.; Aymerich, X.; Benstteter, G.; Shen, Z. Y.; Bersuker, G.

Polycrystallization effects on the nanoscale electrical properties of high-k dielectrics

NANOSCALE RESEARCH LETTERS

IF4.1

2011-01-31

OAAI

Lanza, Mario; Iglesias, Vanessa; Porti, Marc; Nafria, Montse; Aymerich, Xavier