Yinchi Liu - Publications, H-index & Citations

Yinchi Liu

fudan university

4H指数

20论文数

60被引数

收录论文 9

发表时间

A NiO/β-Ga2O3 Heterojunction Diode With Ultralow Turn-On Voltage via O2 Plasma Treatment 通过O2等离子体处理的NiO/β-Ga2O3异质结二极管具有超低开启电压

IEEE Transactions on Electron Devices

IF3.2

2026-03-01

PREAI

Zhang, Hao; Liu, Yinchi; Yang, Jining; Guo, Yeye; Yu, Yiwen; He, Yongjie; Zhu, Hao; Liu, Wenjun

Back-End-of-Line-Compatible Low-Voltage Operation in Hf0.5Zr0.5O2 Ferroelectric Film Enabled by in-situ Lanthanum Doping 通过原位镧掺杂实现的Hf0.5Zr0.5O2铁电薄膜中的后端兼容低压操作

National Science Review

IF17.1

2026-02-02

OAAI

Yinchi Liu; Kangli Xu; Shuqi Tang; Handong Zhu; Lin Chen; Shiyou Chen; Wenjun Liu; Peng Zhou; null

Zirconium-Rich Strategy in Ultrathin Hf0.5Zr0.5O2 toward Back-End-of-Line-Compatible Ferroelectric Random Access Memory 富锆策略在超薄Hf0.5Zr0.5O2中实现与后端工艺兼容的铁电随机存取存储器

Advanced Science

IF14.1

2025-08-14

PREAI

Yinchi Liu; Jiajia Tao; Xiaoyu Dou; Kangli Xu; Yuchun Li; Handong Zhu; Hongliang Lu; Yanxi Li; Chi Liu; Jiezhi Chen; Lin Chen; Shijin Ding; Jixuan Wu; Wenjun Liu

Enhanced memory window and reliability of α-IGZO FeFET enabled by atomic-layer-deposited HfO2 interfacial layer 通过原子层沉积HfO2界面层实现的α-IGZO FeFET增强型存储窗口和可靠性

SCIENCE CHINA-INFORMATION SCIENCES

IF7.6

2025-05-15

PREAI

Liu, Yinchi; Lu, Xun; Li, Shiyu; Zhang, Hao; Yang, Jining; Guo, Yeye; Golosov, Dmitriy Anatolyevich; Gu, Chenjie; Lu, Hongliang; Ding, Shijin; Liu, Wenjun

Enhanced Ferroelectricity and Reliability in Sub-6 nm Ferroelectric Hf0.5Zr0.5O2/ZrO2/Hf0.5Zr0.5O2 Stack Film Compatible with BEOL Process

ACS APPLIED ELECTRONIC MATERIALS

IF4.7

2024-11-14

PREAI

Liu, Yinchi; Yang, Jining; Zhang, Hao; Golosov, Dmitriy Anatolyevich; Gu, Chenjie; Wu, Xiaohan; Lu, Hongliang; Chen, Lin; Ding, Shijin; Liu, Wenjun

Novel Two-Terminal Synapse/Neuron Based on an Antiferroelectric Hafnium Zirconium Oxide Device for Neuromorphic Computing 基于用于神经形态计算的反铁电氧化铪锆设备的新型两端突触/神经元

NANO LETTERS

IF9.1

2024-08-15

PREAI

Xu, Kangli; Wang, Tianyu; Lu, Chen; Song, Yifan; Liu, Yongkai; Yu, Jiajie; Liu, Yinchi; Li, Zhenhai; Meng, Jialin; Zhu, Hao; Sun, Qing-Qing; Zhang, David Wei; Chen, Lin

A 1.6 kV Ga2O3 Schottky Barrier Diode with a Low Reverse Current of 1.2 x 10-5 A/cm2 Enabled by Field Plates and N Ion-Implantation Edge Termination 通过场板和N离子注入边缘终止实现的1.6 kV Ga2O3肖特基势垒二极管，反向电流为1.2x10-5 A/cm2

NANOMATERIALS

IF4.3

2024-06-05

OAAI

Zhou, Xinlong; Yang, Jining; Zhang, Hao; Liu, Yinchi; Xie, Genran; Liu, Wenjun

Batch normalization-free weight-binarized SNN based on hardware-saving IF neuron

NEUROCOMPUTING

IF6.5

2023-08-01

PREAI

Qiao, G. C.; Ning, N.; Zuo, Y.; Zhou, P. J.; Sun, M. L.; Hu, S. G.; Yu, Q.; Liu, Y.

La In Situ Doping-Engineered HZO Capacitors Achieving High- k (~56.2) and Ferroelectricity (2P_r~43.4 μ C/cm²) at 1.5 MV/Cm With 10¹⁰ Cycles Endurance 通过原位掺杂工程制备的HZO电容器，在1.5 MV/cm下实现了高介电常数（~56.2）和铁电性（2P_r~43.4 μC/cm²），并具有10¹⁰次循环耐久性。

IEEE Electron Device Letters

IF4.5

PREAI

Kangli Xu; Lei Wang; Aolin Yuan; Binjie Weng; Yongkai Liu; Yinchi Liu; Jiajie Yu; Bao Zhu; Jialin Meng; Hao Zhu; Qingqing Sun; David Wei Zhang; Tianyu Wang; Lin Chen

研究方向