logo
科言猫学术研究的AI总结
language
手机端手机端
  • Phone Feature微信小程序
简体中文简体中文
notice消息通知
博客博客
delete
arrow
返回
M

Michael A. Mastro

university of alabama tuscaloosa

35H指数
233论文数
7.3K被引数
收录论文 36
发表时间
logo
Epitaxial Cr2MnO4 p-n heterojunction to (201) β-Ga2O3 deposited via off-axis magnetron sputtering外延Cr₂MnO₄ p-n异质结与通过偏轴磁控溅射沉积的(201) β-Ga₂O₃
errJOURNAL OF APPLIED PHYSICS
IF2.5
err2025-12-07
err1
PREAI
errAkintunde, Babajide; Derksen, Naomi; Imran, Ashik; Gallagher, James C.; Tadjer, Marko J.; Gutierrez, Audrey Rose; Hall, Merlin J.; Orent, Jared T.; Rimal, Gaurab; Kayani, Asghar N.; Pennachio, Daniel J.; Dey, Koushik; Wang, Xin; Gann, Katie R.; Hobart, Karl D.; Mastro, Michael A.; Hauser, Adam J.
err分享
err收藏
Operation of AlGaN Channel HEMTs at 850 °C With ON/OFF Ratio >104
errIEEE Electron Device Letters
IF4.5
err2025-11-25
err0
PREAI
errJames Spencer Lundh; Brianna A. Klein; Andrew A. Allerman; Andrew J. Cantrell; Alfred Zhao; Daniel J. Pennachio; GlenAsia Gonzalez; Eric Cruz; Tolen M. Nelson; Geoffrey M. Foster; Alan G. Jacobs; Andrew D. Koehler; Marko J. Tadjer; Giovanni Esteves; Roy H. Olsson; Andrew M. Armstrong; Karl D. Hobart; Michael A. Mastro
err分享
err收藏
Selective Thermal Mapping of Wide and Ultrawide Band Gap Semiconductor Devices Using Mechanically Exfoliated MoS2 Flakes利用机械剥离的MoS2薄片对宽带隙和超宽带隙半导体器件进行选择性热成像
errACS Applied Electronic Materials
IF4.7
err2025-07-14
err0
PREAI
errJames Spencer Lundh; Hsun-Jen Chuang; Cory D. Cress; Alan G. Jacobs; Berend T. Jonker; Travis J. Anderson; Karl D. Hobart; Michael A. Mastro; Marko J. Tadjer
err分享
err收藏
Reduced temperature in lateral (AlxGa1-x)2O3/Ga2O3 heterojunction field effect transistor capped with nanocrystalline diamond
errAPPLIED PHYSICS LETTERS
IF3.6
err2024-04-10
err4
errOAAI
errMasten, Hannah N.; Lundh, James Spencer; Feygelson, Tatyana I.; Sasaki, Kohei; Cheng, Zhe; Spencer, Joseph A.; Liao, Pai-Ying; Hite, Jennifer K.; Pennachio, Daniel J.; Jacobs, Alan G.; Mastro, Michael A.; Feigelson, Boris N.; Kuramata, Akito; Ye, Peide; Graham, Samuel; Pate, Bradford B.; Hobart, Karl D.; Anderson, Travis J.; Tadjer, Marko J.
err分享
err收藏
Detecting defects that reduce breakdown voltage using machine learning and optical profilometry
errSCIENTIFIC REPORTS
IF3.9
err2024-03-28
err0
errOAAI
errGallagher, James C.; Mastro, Michael A.; Jacobs, Alan G.; Kaplar, Robert. J.; Hobart, Karl D.; Anderson, Travis J.
err分享
err收藏
Experimental determination of critical thickness limitations of (010) β-(AlxGa1-x)2O3 heteroepitaxial films
errAPPLIED PHYSICS LETTERS
IF3.6
err2023-11-27
err4
PREAI
errLundh, James Spencer; Huynh, Kenny; Liao, Michael; Olsen, William; Pan, Kaicheng; Sasaki, Kohei; Konishi, Keita; Masten, Hannah N.; Hite, Jennifer K.; Mastro, Michael A.; Mahadik, Nadeemullah A.; Goorsky, Mark; Kuramata, Akito; Hobart, Karl D.; Anderson, Travis J.; Tadjer, Marko J.
err分享
err收藏
Using machine learning with optical profilometry for GaN wafer screening
errSCIENTIFIC REPORTS
IF3.9
err2023-02-27
err2
errOAAI
errGallagher, James C.; Mastro, Michael A.; Ebrish, Mona A.; Jacobs, Alan G.; Gunning, Brendan P.; Kaplar, Robert J.; Hobart, Karl D.; Anderson, Travis J.
err分享
err收藏
Activation of implanted Si, Ge, and Sn donors in high-resistivity halide vapor phase epitaxial β-Ga2O3:N with high mobility
errAPPLIED PHYSICS LETTERS
IF3.6
err2022-11-07
err11
errOAAI
errSpencer, Joseph A.; Tadjer, Marko J.; Jacobs, Alan G.; Mastro, Michael A.; Lyons, John L.; Freitas, Jaime A.; Gallagher, James C.; Thieu, Quang T.; Sasaki, Kohei; Kuramata, Akito; Zhang, Yuhao; Anderson, Travis J.; Hobart, Karl D.
err分享
err收藏
Site control of quantum emitters in gallium nitride by polarity
errAPPLIED PHYSICS LETTERS
IF3.6
err2021-01-11
err13
PREAI
errNguyen, Minh Anh Phan; Hite, Jennifer; Mastro, Michael A.; Kianinia, Mehran; Toth, Milos; Aharonovich, Igor
err分享
err收藏
Band offset determination for amorphous Al2O3 deposited on bulk AlN and atomic-layer epitaxial AlN on sapphire
errAPPLIED PHYSICS LETTERS
IF3.6
err2020-11-05
err9
errOAAI
errFares, Chaker; Ren, Fan; Tadjer, Marko J.; Woodward, Jeffrey; Mastro, Michael A.; Feigelson, Boris N.; Eddy, Charles R., Jr.; Pearton, S. J.
err分享
err收藏
Characterization of β-Ga2O3 homoepitaxial films and MOSFETs grown by MOCVD at high growth rates
errJOURNAL OF PHYSICS D-APPLIED PHYSICS
IF3.2
err2020-10-28
err33
PREAI
errTadjer, Marko J.; Alema, Fikadu; Osinsky, Andrei; Mastro, Michael A.; Nepal, Neeraj; Woodward, Jeffrey M.; Myers-Ward, Rachael L.; Glaser, Evan R.; Freitas, Jaime A.; Jacobs, Alan G.; Gallagher, James C.; Mock, Alyssa L.; Pennachio, Daniel J.; Hajzus, Jenifer; Ebrish, Mona; Anderson, Travis J.; Hobart, Karl D.; Hite, Jennifer K.; Eddy Jr., Charles R.
err分享
err收藏
Thermal atomic layer etching of crystalline GaN using sequential exposures of XeF2 and BCl3
errAPPLIED PHYSICS LETTERS
IF3.6
err2019-06-17
err42
PREAI
errJohnson, Nicholas R.; Hite, Jennifer K.; Mastro, Michael A.; Eddy, Charles. R.; George, Steven M.
err分享
err收藏
Zika virus detection using antibody-immobilized disposable cover glass and AIGaN/GaN high electron mobility transistors
errAPPLIED PHYSICS LETTERS
IF3.6
err2018-07-16
err28
errOAAI
errYang, Jiancheng; Carey, Patrick; Ren, Fan; Mastro, Michael A.; Beers, Kimberly; Pearton, S. J.; Kravchenko, Ivan I.
err分享
err收藏
A review of Ga2O3 materials, processing, and devicesGa2O3材料、加工和器件综述
errAPPLIED PHYSICS REVIEWS
IF11.6
err2018-01-11
err2.2K
errOAAI
errPearton, S. J.; Yang, Jiancheng; Cary, Patrick H.; Ren, F.; Kim, Jihyun; Tadjer, Marko J.; Mastro, Michael A.
err分享
err收藏
Rapid detection of cardiac troponin I using antibody-immobilized gate-pulsed AlGaN/GaN high electron mobility transistor structures
errAPPLIED PHYSICS LETTERS
IF3.6
err2017-11-17
err34
errOAAI
errYang, Jiancheng; Carey, Patrick; Ren, Fan; Wang, Yu-Lin; Good, Michael L.; Jang, Soohwan; Mastro, Michael A.; Pearton, S. J.
err分享
err收藏
Quasi-Two-Dimensional h-BN/β-Ga2O3 Heterostructure Metal-Insulator-Semiconductor Field-Effect Transistor准二维h-bn/β-Ga2O3异质结构金属-绝缘体-半导体场效应晶体管
errACS APPLIED MATERIALS & INTERFACES
IF8.2
err2017-06-14
err107
PREAI
errKim, Janghyuk; Mastro, Michael A.; Tadjer, Marko J.; Kim, Jihyun
err分享
err收藏
Effect of front and back gates on β-Ga2O3 nano-belt field-effect transistors
errAPPLIED PHYSICS LETTERS
IF3.6
err2016-08-08
err105
PREAI
errAhn, Shihyun; Ren, Fan; Kim, Janghyuk; Oh, Sooyeoun; Kim, Jihyun; Mastro, Michael A.; Pearton, S. J.
err分享
err收藏
Development of solar-blind photodetectors based on Si-implanted β-Ga2O3
errOPTICS EXPRESS
IF3.3
err2015-10-20
err105
errOAAI
errOh, Sooyeoun; Jung, Younghun; Mastro, Michael A.; Hite, Jennifer K.; Eddy, Charles R., Jr.; Kim, Jihyun
err分享
err收藏
GaN-based ultraviolet light-emitting diodes with AuCl3-doped graphene electrodes
errOPTICS EXPRESS
IF3.3
err2013-11-15
err38
errOAAI
errKim, Byung-Jae; Yang, Gwangseok; Kim, Hong-Yeol; Baik, Kwang Hyeon; Mastro, Michael A.; Hite, Jennifer K.; Eddy, Charles R., Jr.; Ren, Fan; Pearton, Stephen J.; Kim, Jihyun
err分享
err收藏
Buried graphene electrodes on GaN-based ultra-violet light-emitting diodes
errAPPLIED PHYSICS LETTERS
IF3.6
err2012-07-18
err30
PREAI
errKim, Byung-Jae; Lee, Chongmin; Mastro, Michael A.; Hite, Jennifer K.; Eddy, Charles R., Jr.; Ren, Fan; Pearton, Stephen J.; Kim, Jihyun
err分享
err收藏

研究方向

暂时未获取到该数据
合作学者
合作期刊
S
S. J. Pearton
H 指数: 115 · 论文数: 2.9K
S
Steven M. George
H 指数: 102 · 论文数: 651
F
F. Ren
H 指数: 94 · 论文数: 2.0K
I
Igor Aharonovich
H 指数: 70 · 论文数: 532
S
Samuel Graham
H 指数: 70 · 论文数: 520
查看更多