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Wenwu Wang

Key Laboratory of Fabrication Technologies for Integrated Circuits and the Institute of Microelectronics

18H指数
213论文数
1.7K被引数
收录论文 34
发表时间
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The physical origin of inhomogeneous field within HfO2-based ferroelectric capacitor
err2024-03-04
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PREAI
errKe, Xiaoyu; Dai, Saifei; Xu, Hao; Chai, Junshuai; Wang, Xiaolei; Wang, Wenwu
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π-π stacking small molecules enable high performance perovskite solar cells
err2024-01-01
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PREAI
errHe, Aoxi; Wang, Meng; Gong, Xiaoli; Tang, Peng; Wu, Lili; Hao, Xia; Wang, Wenwu; Xia, Gengpei; Jiang, Yu; Zhang, Jingquan
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Insight into over Repair of Hot Carrier Degradation by GIDL Current in Si p-FinFETs Using Ultra-Fast Measurement Technique
err2023-04-03
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errOAAI
errChang, Hao; Wang, Guilei; Yang, Hong; Liu, Qianqian; Zhou, Longda; Ji, Zhigang; Yu, Ruixi; Wu, Zhenhua; Yin, Huaxiang; Du, Anyan; Li, Junfeng; Luo, Jun; Zhao, Chao; Wang, Wenwu
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Highly Reliable Logic-in-Memory by Bidirectional Built-in Electric- Field-Modulated Multistate IGZO/AFE Nonvolatile Memory
err2023-02-08
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PREAI
errTian, Guoliang; Chen, Jia; Yan, Gangping; Li, Lianlian; Song, Zhiyu; Yang, Shangbo; Zhang, Zhaohao; Xu, Gaobo; Yin, Huaxiang; Yang, Shuai; Luo, Yanna; Bi, Jinshun; Wu, Zhenhua; Wang, Guilei; Zhao, Chao; Luo, Jun; Wang, Wenwu
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Reduced Dislocation of GaAs Layer Grown on Ge-Buffered Si (001) Substrate Using Dislocation Filter Layers for an O-Band InAs/GaAs Quantum Dot Narrow-Ridge Laser
err2022-09-22
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errOAAI
errDu, Yong; Wei, Wenqi; Xu, Buqing; Wang, Guilei; Li, Ben; Miao, Yuanhao; Zhao, Xuewei; Kong, Zhenzhen; Lin, Hongxiao; Yu, Jiahan; Su, Jiale; Dong, Yan; Wang, Wenwu; Ye, Tianchun; Zhang, Jianjun; Radamson, Henry H.
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Advanced process and electron device technology
err2022-06-01
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errOAAI
errZhang, Dan; Su, Xiaojing; Chang, Hao; Xu, Hao; Wang, Xiaolei; He, Xiaobin; Li, Junjie; Zhao, Fei; Yao, Qide; Luo, Yanna; Ma, Xueli; Yang, Hong; Li, Yongliang; Wu, Zhenhua; Su, Yajuan; Yang, Tao; Wei, Yayi; Du, Anyan; Zhu, Huilong; Li, Junfeng; Yin, Huaxiang; Luo, Jun; Ye, Tianchun; Wang, Wenwu
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Low-Temperature (≤500 °C) Complementary Schottky Source/Drain FinFETs for 3D Sequential Integration
err2022-04-05
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errOAAI
errMao, Shujuan; Gao, Jianfeng; He, Xiaobin; Liu, Weibing; Liu, Jinbiao; Wang, Guilei; Zhou, Na; Luo, Yanna; Cao, Lei; Zhang, Ran; Liu, Haochen; Li, Xun; Li, Yongliang; Wu, Zhenhua; Li, Junfeng; Luo, Jun; Zhao, Chao; Wang, Wenwu; Yin, Huaxiang
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Four-Period Vertically Stacked SiGe/Si Channel FinFET Fabrication and Its Electrical Characteristics
err2021-06-28
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errOAAI
errLi, Yongliang; Zhao, Fei; Cheng, Xiaohong; Liu, Haoyan; Zan, Ying; Li, Junjie; Zhang, Qingzhu; Wu, Zhenhua; Luo, Jun; Wang, Wenwu
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Investigate on the Mechanism of HfO2/Si0.7Ge0.3 Interface Passivation Based on Low-Temperature Ozone Oxidation and Si-Cap Methods基于低温臭氧氧化和si-cap方法的HfO2/Si0.7Ge0.3界面钝化机理研究
err2021-04-09
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errOAAI
errYao, Qide; Ma, Xueli; Wang, Hanxiang; Wang, Yanrong; Wang, Guilei; Zhang, Jing; Liu, Wenkai; Wang, Xiaolei; Yan, Jiang; Li, Yongliang; Wang, Wenwu
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Cryogenic Transport Characteristics of P-Type Gate-All-Around Silicon Nanowire MOSFETs
err2021-01-26
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errOAAI
errGu, Jie; Zhang, Qingzhu; Wu, Zhenhua; Yao, Jiaxin; Zhang, Zhaohao; Zhu, Xiaohui; Wang, Guilei; Li, Junjie; Zhang, Yongkui; Cai, Yuwei; Xu, Renren; Xu, Gaobo; Xu, Qiuxia; Yin, Huaxiang; Luo, Jun; Wang, Wenwu; Ye, Tianchun
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Fabrication and selective wet etching of Si0.2Ge0.8/Ge multilayer for Si0.2Ge0.8 channel gate-all-around MOSFETs
err2021-01-01
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PREAI
errLiu, Haoyan; Li, Yongliang; Cheng, Xiaohong; Zan, Ying; Lu, Yihong; Wang, Guilei; Li, Junjie; Kong, Zhenzhen; Ma, Xueli; Wang, Xiaolei; Yang, Hong; Luo, Jun; Wang, Wenwu
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Optimization of zero-level interlayer dielectric materials for gate-all-around silicon nanowire channel fabrication in a replacement metal gate process
err2021-01-01
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PREAI
errZhang, Qingzhu; Tu, Hailing; Zhang, Zhaohao; Li, Junjie; Wei, Feng; Wang, Guilei; Han, Jiaohao; Zhao, Hongbin; Zhang, Yongkui; Li, Yongliang; Wu, Zhenhua; Gu, Jie; Xu, Renren; Bai, Guibin; Xu, Gaobo; Wei, Qianhui; Fan, Yanyan; Yan, Jiang; Li, Bo; Xu, Qiuxia; Yin, Huaxiang; Wang, Wenwu
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Wide-bandgap organic–inorganic hybrid and all-inorganic perovskite solar cells and their application in all-perovskite tandem solar cells宽禁带有机-无机杂化和全无机钙钛矿太阳能电池及其在全钙钛矿串联太阳能电池中的应用
err2021-01-01
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errOAAI
errHe, Rui; Ren, Shengqiang; Chen, Cong; Yi, Zongjin; Luo, Yi; Lai, Huagui; Wang, Wenwu; Zeng, Guanggen; Hao, Xia; Wang, Ye; Zhang, Jingquan; Wang, Changlei; Wu, Lili; Fu, Fan; Zhao, Dewei
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Influence of interlayer GeOx thickness on band alignment of Al2O3/GeOx/Ge structure
err2020-07-01
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PREAI
errXiang, Jinjuan; Li, Tingting; Yu, Jiahan; Wang, Xiaolei; Ma, Xueli; Gao, Jianfeng; Zhao, Chao; Wang, Wenwu
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Influence of an ALD TiN capping layer on the PBTI characteristics of n-FinFET with ALD HfO2/TiN-capping/TiAl gate stacks
err2020-01-13
err1
PREAI
errYang, Hong; Qi, Luwei; Zhang, Yanbo; Tang, Bo; Liu, Qianqian; Xu, Hao; Ma, Xueli; Wang, Xiaolei; Li, Yongliang; Yin, Huaxiang; Li, Junfeng; Zhu, Huilong; Zhao, Chao; Wang, Wenwu; Ye, Tianchun
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Identification of a suitable passivation route for high-k/SiGe interface based on ozone oxidation
err2019-11-01
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PREAI
errMa, Xueli; Zhou, Lixing; Xiang, Jinjuan; Yang, Hong; Wang, Xiaolei; Li, Yongliang; Zhang, Jing; Zhao, Chao; Yin, Huaxiang; Wang, Wenwu; Ye, Tianchun
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