Massengill, Lloyd W.

vanderbilt university

0H指数

4论文数

0被引数

收录论文 4

发表时间

Back-Biasing Strategy to Mitigate TID-Induced Threshold Voltage Shift in 22-nm FDSOI Transistors 22-nm FDSOI晶体管中缓解总剂量效应引起的阈值电压漂移的背偏策略

IEEE Transactions on Nuclear Science

IF1.9

2026-04-01

PREAI

Dean, Berkay R.; Hu, Michael D.; Haeffner, Tim D.; Kauppila, Jeff S.; Alles, Michael L.; Trippe, James M.; Ball, Dennis R.; Sierawski, Brian D.; Holman, Timothy W.; Kosier, Steven L.; Massengill, Lloyd W.

Trends in 45 nm Integrated Circuit Single-Event Upset Rates With Stacked-Transistor Layouts 45纳米集成电路中采用堆叠晶体管布局的单粒子翻转率趋势

IEEE Transactions on Nuclear Science

IF1.9

2026-04-01

PREAI

Hu, Michael D.; Trippe, James M.; Reed, Robert A.; Sierawski, Brian D.; Ball, Dennis R.; Kauppila, Jeffrey S.; Massengill, Lloyd W.; Holman, W. Timothy

TID Degradation Mechanisms in Gate-All-Around Silicon Nanowire FETs 总剂量辐照退化机制在环绕栅极硅纳米线场效应晶体管中

IEEE Transactions on Nuclear Science

IF1.9

2026-04-01

PREAI

Champagne, Chloe A.; Ball, Dennis R.; Trippe, James M.; Ritzenthaler, Romain; Mitard, Jerome; Linten, Dimitri; Massengill, Lloyd W.; Kosier, Steven L.; Reed, Robert A.; Zhang, En Xia; Alles, Michael L.; Bonaldo, Stefano; Fleetwood, Daniel M.; Sierawski, Brian D.

Heavy Ion-Induced Degradation in Gallium Nitride High Electron Mobility Transistors 重离子诱导的氮化镓高电子迁移率晶体管退化

IEEE Transactions on Nuclear Science

IF1.9

2026-04-01

PREAI

Gray, Josh A.; Sternberg, Andrew L.; Kauppila, Jeffery S.; Ball, Dennis R.; Witulski, Arthur F.; Pilvelait, Bruce R.; Cameron, Charles B.; Trippe, James M.; Kosier, Steven L.; Alles, Michael L.; Davidson, Jim L.; Schrimpf, Ronald D.; Massengill, Lloyd W.

研究方向