C. Monier - Publications, H-index & Citations

C. Monier

机构信息待补充

19H指数

110论文数

1.2K被引数

收录论文 11

发表时间

A Meeting of Materials

IEEE MICROWAVE MAGAZINE

IF2.6

2017-03-01

PREAI

Gutierrez-Aitken, Augusto; Wu, Bryan Yi-Cheng; Scott, Dennis; Sato, Ken; Poust, Benjamin; Watanabe, Monte; Monier, Cedric; Lin, Nancy; Zeng, Xiang; Nakamura, Eric; Cheng, Peter; Kaneshiro, Eric; Chan, Wesley; Smorchkova, Ioulia; Thai, Khanh; Wang, Sujane; Slavin, David; Oki, Aaron; Kagiwada, Reynold

Diverse Accessible Heterogeneous Integration (DAHI) Foundry at Northrop Grumman Aerospace Systems (NGAS)

SEMICONDUCTOR WAFER BONDING: SCIENCE, TECHNOLOGY AND APPLICATIONS 14

IF0

2016-08-24

PREAI

Gutierrez-Aitken, A.; Scott, D.; Sato, K.; Poust, B.; Nakamura, E.; Thai, K.; Chan, W.; Kaneshiro, E.; Monier, C.; Smorchkova, I.; Lin, N.; Ferizovic, D.; Zeng, X.; Oki, A.; Kagiwada, R.

Observation of enhanced transport in carbon-doped InGaAsN after in situ anneal and its impact on performance of NpN InGaP/InGaAsN heterojunction bipolar transistors

APPLIED PHYSICS LETTERS

IF3.6

2002-09-09

PREAI

Monier, C; Baca, AG; Sun, SZ; Armour, E; Newman, F; Hou, HQ

Significant operating voltage reduction on high-speed GaAs-based heterojunction bipolar transistors using a low band gap InGaAsN base layer

IEEE TRANSACTIONS ON ELECTRON DEVICES

IF3.2

2002-08-01

PREAI

Monier, C; Baca, AG; Chang, PC; Newman, FD; Li, NY; Sun, SZ; Armour, E; Hou, HQ

Influence of MgO and Sc2O3 passivation on AlGaN/GaN high-electron-mobility transistors

APPLIED PHYSICS LETTERS

IF3.6

2002-03-04

182

PREAI

Luo, B; Johnson, JW; Kim, J; Mehandru, RM; Ren, F; Gila, BP; Onstine, AH; Abernathy, CR; Pearton, SJ; Baca, AG; Briggs, RD; Shul, RJ; Monier, C; Han, J

Effect of Mg ionization efficiency on performance of Npn AlGaN/GaN heterojunction bipolar transistors

APPLIED PHYSICS LETTERS

IF3.6

2000-05-22