未登录Comparative analysis of hole transport in compressively strained InSb and Ge quantum well heterostructures
Agrawal, Ashish; Barth, Michael; Madan, Himanshu; Lee, Yi-Jing; Lin, You-Ru; Wu, Cheng-Hsien; Ko, Chih-Hsin; Wann, Clement H.; Loubychev, Dmitri; Liu, Amy; Fastenau, Joel; Lindemuth, Jeff; Datta, Suman .png)
分享.png)
收藏Band alignment study of lattice-matched InAlP and Ge using x-ray photoelectron spectroscopyOwen, Man Hon Samuel; Guo, Cheng; Chen, Shu-Han; Wan, Cheng-Tien; Cheng, Chao-Ching; Wu, Cheng-Hsien; Ko, Chih-Hsin; Wann, Clement H.; Ivana; Zhang, Zheng; Pan, Ji Sheng; Yeo, Yee-Chia 分享 收藏 分享 收藏 分享 收藏 Ge Epitaxial Growth on GaAs Substrates for Application to Ge-Source/Drain GaAs MOSFETsLuo, Guang-Li; Han, Zong-You; Chien, Chao-Hsin; Ko, Chih-Hsin; Wann, Clement H.; Lin, Hau-Yu; Shen, Yi-Ling; Chung, Cheng-Ting; Huang, Shih-Chiang; Cheng, Chao-Ching; Chang, Chun-Yen 分享 收藏 The Annihilation of Threading Dislocations in the Germanium Epitaxially Grown within the Silicon Nanoscale TrenchesLuo, Guang-Li; Huang, Shih-Chiang; Ko, Chih-Hsin; Wann, Clement H.; Chung, Cheng-Ting; Han, Zong-You; Cheng, Chao-Ching; Chang, Chun-Yen; Lin, Hau-Yu; Chien, Chao-Hsin 分享 收藏 分享 收藏 
.png){kind=icon}
.png){kind=icon}
.png){kind=icon}
.png){kind=icon}