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J
Josef Lutz
Technische Universitat Chemnitz
35
H指数
286
论文数
5.3K
被引数
0
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9
发表时间
发表时间
IF
被引数
On the Reverse Recovery of SiC MOSFET Inverse Diodes
关于SiC MOSFET反向二极管的反向恢复
IEEE Transactions on Electron Devices
IF
3.2
2026-03-01
0
PRE
AI
Lutz, J.; Maitra, A.; Mysore, M. L.; Baumler, C.; Basler, T.
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Fatigue Crack Networks in Die-Attach Layers of IGBT Modules Under a Power Cycling Test
IEEE TRANSACTIONS ON POWER ELECTRONICS
IF
6.5
2024-12-01
2
OA
AI
Liu, Shenyi; Vuorinen, Vesa; Liu, Xing; Fredrikson, Olli; Brand, Sebastian; Tiwary, Nikhilendu; Lutz, Josef; Paulasto-Krockel, Mervi
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High Cycle Fatigue Testing of Silicon IGBT Devices Under Application-Close Conditions
IEEE TRANSACTIONS ON POWER ELECTRONICS
IF
6.5
2023-11-01
6
PRE
AI
Schwabe, Christian; Thoenelt, Nick; Lutz, Josef; Basler, Thomas
分享
收藏
Study on the IGBT Short Circuit Type II Behavior Considering the Plasma Effect
IEEE TRANSACTIONS ON POWER ELECTRONICS
IF
6.5
2023-01-01
1
PRE
AI
Liu, Xing; Mysore, Madhu-Lakshman; Lutz, Josef; Basler, Thomas
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Temperature Influence on the Accuracy of the Transient Dual Interface Method for the Junction-to-Case Thermal Resistance Measurement
温度对瞬态双界面法测量结-壳热阻的准确性的影响
IEEE TRANSACTIONS ON POWER ELECTRONICS
IF
6.5
2021-07-01
20
PRE
AI
Deng, Erping; Chen, Weinan; Heimler, Patrick; Lutz, Josef
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Correction of Delay-Time-Induced Maximum Junction Temperature Offset During Electrothermal Characterization of IGBT Devices
IEEE TRANSACTIONS ON POWER ELECTRONICS
IF
6.5
2021-03-01
22
PRE
AI
Deng, Erping; Borucki, Ludger; Lutz, Josef
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The Influence of the Gate Driver and Common-Source Inductance on the Short-Circuit Behavior of IGBT Modules and Protection
IEEE TRANSACTIONS ON POWER ELECTRONICS
IF
6.5
2020-10-01
9
PRE
AI
Liu, Xing; Kowalsky, Jens; Herrmann, Clemens; Baeumler, Christia; Lutz, Josef
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Experimental Investigation of Linear Cumulative Damage Theory With Power Cycling Test
IEEE TRANSACTIONS ON POWER ELECTRONICS
IF
6.5
2019-05-01
27
PRE
AI
Zeng, Guang; Herold, Christian; Methfessel, Torsten; Schaefer, Marc; Schilling, Oliver; Lutz, Josef
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Difference in Device Temperature Determination Using p-n-Junction Forward Voltage and Gate Threshold Voltage
IEEE TRANSACTIONS ON POWER ELECTRONICS
IF
6.5
2019-03-01
63
PRE
AI
Zeng, Guang; Cao, Haiyang; Chen, Weinan; Lutz, Josef
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研究方向
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合作学者
合作期刊
O
Oliver Schilling
H 指数: 53 · 论文数: 398
A
Arindam Maitra
H 指数: 45 · 论文数: 267
V
Vesa Vuorinen
H 指数: 27 · 论文数: 157
C
Christian Herold
H 指数: 26 · 论文数: 104
M
Mervi Paulasto‐Kröckel
H 指数: 23 · 论文数: 176
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