Xiujian Sun

school of nano technology and nano bionics, university of science and technology of china, hefei 230026, people’s republic of china

H指数:14

被引数:562

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GaN-based double-heterojunction bipolar transistors with regrown p++-InGaN contact and etching damage recovery

GaN基双异质结双极晶体管，具有再生长p++-InGaN接触和刻蚀损伤修复

Journal of Physics D: Applied Physics

IF3.2

2025-12-050

OAAI

Room-temperature electrically injected GaN-based photonic-crystal surface-emitting lasers

室温电注入的GaN基光子晶体面发射激光器

Journal of Semiconductors

IF5.3

2025-09-010

PRE

Effective removal of Si contamination at the GaN regrowth interface through in-situ etching

通过原位刻蚀有效去除GaN外延再生长界面处的Si污染

APPLIED SURFACE SCIENCE

IF6.9

2025-06-010

PRE

Structure Design of InGaN-Based Blue Laser Diodes With ITO and Nanoporous GaN Cladding Layers

IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS

IF5.1

2025-03-010

PRE

480 nm InGaN-based cyan laser diode grown on Si by interface engineering of active region

OPTICS EXPRESS

IF3.3

2024-05-091

Toward High-Performance AlGaN-Based UV-B LEDs: Engineering of the Strain Relaxation Process

CRYSTAL GROWTH & DESIGN

IF3.4

2024-04-171

PRE

Effects of ammonia and oxygen plasma treatment on interface traps in AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistors

APPLIED PHYSICS LETTERS

IF3.6

2023-11-145

PRE

Influence of sidewall grating etching depth on GaN-based distributed feedback laser diodes

JOURNAL OF PHYSICS D-APPLIED PHYSICS

IF3.2

2023-11-070

Performance improvement of GaN-based microdisk lasers by using a PEALD-SiO2 passivation layer

OPTICS EXPRESS

IF3.3

2023-05-317

Enhanced breakdown voltage and dynamic performance of GaN HEMTs with AlN/GaN superlattice buffer

AlN/GaN超晶格缓冲层增强GaN hemt的击穿电压和动态性能

JOURNAL OF PHYSICS D-APPLIED PHYSICS

IF3.2

2023-05-254

PRE

NANOMATERIALS

IF4.3

2023-05-0610

OAAI

Unidirectional emission of GaN-on-Si microring laser and its on-chip integration

NANOPHOTONICS

IF6.6

2023-01-0310

OAAI

Selective area epitaxy of degenerate n-GaN for HEMT ohmic contact by MOCVD

APPLIED PHYSICS LETTERS

IF3.6

2022-11-2113

Crack-free 2.2 μm-thick GaN grown on Si with a single-layer AlN buffer for RF device applications

JOURNAL OF PHYSICS D-APPLIED PHYSICS

IF3.2

2022-11-145

PRE

Continuous-Wave Current Injected InGaN/GaN Microdisk Laser on Si(100)

Si(100) 上连续波电流注入InGaN/GaN微盘激光器

ACS PHOTONICS

IF6.7

2022-10-289

PRE

Electrically injected GaN-on-Si blue microdisk laser diodes

OPTICS EXPRESS

IF3.3

2022-04-048

GaN-based distributed feedback laser diodes grown on Si

JOURNAL OF PHYSICS D-APPLIED PHYSICS

IF3.2

2022-02-114

PRE

Narrow-Linewidth GaN-on-Si Laser Diode with Slot Gratings

带缝隙光栅的窄线宽gan-on-si激光二极管

NANOMATERIALS

IF4.3

2021-11-163

OAAI

Reverse leakage and breakdown mechanisms of vertical GaN-on-Si Schottky barrier diodes with and without implanted termination

APPLIED PHYSICS LETTERS

IF3.6

2021-06-1442

PREAI

Enhanced carrier confinement and radiative recombination in GaN-based lasers by tailoring first-barrier doping

OPTICS EXPRESS

IF3.3

2020-10-0812

Xiujian Sun

个人简介

教育背景

工作经历

荣誉奖项

研究方向