On the polarization effect of the p-EBL/p-AlGaN/p-GaN structure for AlGaN-based deep-ultraviolet light-emitting diodesSUPERLATTICES AND MICROSTRUCTURESIF3.32018-10-0114PREAI
Establishment of the relationship between the electron energy and the electron injection for AlGaN based ultraviolet light-emitting diodesOPTICS EXPRESSIF3.32018-06-2724OAAI
Nearly Efficiency-Droop-Free AlGaN-Based Ultraviolet Light-Emitting Diodes with a Specifically Designed Superlattice p-Type Electron Blocking Layer for High Mg Doping EfficiencyNANOSCALE RESEARCH LETTERSIF4.12018-04-2475OAAI
On the AlXGa1-XN/AlyGa1-yN/AlxGa1-N (x>y) p-electron blocking layer to improve the hole injection for AlGaN based deep ultraviolet light-emitting diodesSUPERLATTICES AND MICROSTRUCTURESIF3.32018-01-0132PREAI
UVA light-emitting diode grown on Si substrate with enhanced electron and hole injectionsOPTICS LETTERSIF3.32017-10-3131PREAI
Hole Transport Manipulation To Improve the Hole Injection for Deep Ultraviolet Light-Emitting DiodesACS PHOTONICSIF6.72017-06-20114PREAI
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