W. Schröter - Publications, H-index & Citations

W. Schröter

University of Gottingen

35H指数

179论文数

4.5K被引数

收录论文 11

发表时间

Contribution of diffusion interstitial injection to gettering of metallic impurities in silicon

JOURNAL OF THE ELECTROCHEMICAL SOCIETY

IF3.3

2019-12-07

PREAI

Gaiseanu, F; Schroter, W

Electrical and recombination properties of copper-silicide precipitates in silicon

JOURNAL OF THE ELECTROCHEMICAL SOCIETY

IF3.3

2019-12-06

114

PREAI

Istratov, AA; Hedemann, H; Seibt, M; Vyvenko, OF; Schroter, W; Heiser, T; Flink, C; Hieslmair, H; Weber, ER

Technical note: Automatic evaluation of infrared thermal images by computerized active shape modeling of bovine udders challenged with Escherichia coli

JOURNAL OF DAIRY SCIENCE

IF4.4

2019-05-01

OAAI

Watz, S.; Petzl, W.; Zerbe, H.; Rieger, A.; Glas, A.; Schroeter, W.; Landgraf, T.; Metzner, M.

Aluminum gettering of iron in silicon as a problem of the ternary phase diagram

APPLIED PHYSICS LETTERS

IF3.6

2009-02-11

PREAI

Abdelbarey, D.; Kveder, V.; Schroeter, W.; Seibt, M.

Atomic structure of the interface between silicon (111) and amorphous germanium -: art. no. 195307

PHYSICAL REVIEW B

IF3.7

2004-11-08

PREAI

Borgardt, NI; Plikat, B; Schröter, W; Seibt, M; Wagner, T

Room-temperature silicon light-emitting diodes based on dislocation luminescence

APPLIED PHYSICS LETTERS

IF3.6

2004-03-22

187

PREAI

Kveder, V; Badylevich, M; Steinman, E; Izotov, A; Seibt, M; Schröter, W

Mechanisms and computer modelling of transition element gettering in silicon

SOLAR ENERGY MATERIALS AND SOLAR CELLS

IF6.3

2002-04-01

PREAI

Schröter, W; Kveder, V; Seibt, M; Sattler, A; Spiecker, E

Exploiting long-range atomic ordering for the investigation of strain relaxation in lattice-mismatched epitaxy -: A case study on CUPtB-type ordered (GaIn)P on GaAs

APPLIED SURFACE SCIENCE

IF6.9

2002-03-01

PREAI

Spiecker, E; Seibt, M; Schröter, W; Winterhoff, R; Scholz, F

Recombination activity of contaminated dislocations in silicon:: A electron-beam-induced current contrast behavior -: art. no. 115208

PHYSICAL REVIEW B

IF3.7

2001-03-02

241

PREAI

Kveder, V; Kittler, M; Schröter, W

Electrical and structural properties of nanoscale NiSi2 precipitates in silicon

PHYSICAL REVIEW B

IF3.7

2000-09-15

PREAI

Riedel, F; Schröter, W

Phosphorous-diffusion gettering in the presence of a nonequilibrium concentration of silicon interstitials: A quantitative model

PHYSICAL REVIEW B

IF3.7

1997-04-15

PREAI

Spiecker, E; Seibt, M; Schroter, W

研究方向