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Zs. J. Horváth

hun-ren

21H指数
137论文数
1.5K被引数
收录论文 21
发表时间
Annealed Ti/Cr/Al contacts on n-GaN
errVACUUM
IF3.9
err2014-02-01
err8
PREAI
errDobos, L.; Pecz, B.; Toth, L.; Horvath, Zs J.; Horvath, Z. E.; Toth, A. L.; Poisson, M. -A.
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Charging behavior of silicon nitride based non-volatile memory structures with embedded semiconductor nanocrystals
err2013-03-01
err3
PREAI
errHorvath, Zs. J.; Basa, P.; Jaszi, T.; Molnar, K. Z.; Pap, A. E.; Molnar, Gy.
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Bilayer Cr/Au contacts on n-GaN
errVACUUM
IF3.9
err2012-01-01
err0
PREAI
errDobos, L.; Toth, L.; Pecz, B.; Horvath, Zs. J.; Horvath, Z. E.; Toth, A. L.; Beaumont, B.; Bougrioua, Z.
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Electrical behaviour of lateral Al/n-GaN/Al structures横向Al/n-gan/Al结构的电学行为
err2010-07-01
err6
PREAI
errHorvath, Zs. J.; Dobos, L.; Beaumont, B.; Bougrioua, Z.; Pecza, B.
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Al and Ti/Al contacts on n-GaNN-gan上的Al和Ti/Al接触
errVACUUM
IF3.9
err2009-08-01
err8
PREAI
errDobos, L.; Pecz, B.; Toth, L.; Horvath, Zs J.; Horvath, Z. E.; Horvath, E.; Toth, A.; Beaumont, B.; Bougrioua, Z.
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Electrical and ellipsometry study of sputtered SiO2 structures with embedded Ge nanocrystals
err2008-04-01
err6
PREAI
errBasa, P.; Alagoz, A. S.; Lohner, T.; Kulakci, M.; Turan, R.; Nagy, K.; Horvath, Zs. J.
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Structural and electrical properties of Au and Ti/Au contacts to n-type GaN
errVACUUM
IF3.9
err2008-04-01
err20
PREAI
errDobos, L.; Pecz, B.; Toth, L.; Horvath, Zs. J.; Horvath, Z. E.; Beaumont, B.; Bougrioua, Z.
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Metal contacts to n-GaN
err2006-11-01
err23
PREAI
errDobos, L.; Pecz, B.; Toth, L.; Horvath, Zs. J.; Horvath, Z. E.; Toth, A.; Horvath, E.; Beaumont, B.; Bougrioua, Z.
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Investigation of the morphology and electrical characteristics of FeSi2 quantum dots on silicon
err2004-07-01
err6
PREAI
errDózsa, L; Molnár, G; Horváth, ZJ; Tóth, AL; Gyulai, J; Raineri, V; Giannazzo, F
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Electrical behaviour of Al/SiGe/Si heterostructures:: effect of surface treatment and dislocations
err2004-07-01
err9
PREAI
errHorváth, ZJ; Adám, M; Szabó, I; Orlov, LK; Potapov, A; Tolomasov, VA
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Electrical behaviour of Al/SiO2/Si structures with SiC nanocrystals
err2004-07-01
err19
PREAI
errHorváth, ZJ; Dózsa, L; Krafcsik, OH; Mohácsy, T; Vida, G
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InP Schottky junctions for zero bias detector diodes用于零偏置检波二极管的InP肖特基结
errVACUUM
IF3.9
err2003-05-01
err51
PREAI
errHorváth, ZJ; Rakovics, V; Szentpáli, B; Püspöki, S; Zd'ánsky, K
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Current instabilities in GaAs/InAs self-aggregated quantum dot structuresGaAs/InAs自聚集量子点结构中的电流不稳定性
err2002-05-01
err6
PREAI
errHorváth, ZJ; Frigeri, P; Franchi, S; Van Tuyen, V; Gombia, E; Mosca, R; Dózsa, L
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Modification of Al/Si interface and Schottky barrier height with chemical treatment
err2002-05-01
err51
PREAI
errHorváth, ZJ; Adám, M; Szabó, I; Serényi, M; Van Tuyen, V
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Anomalous temperature dependence of series resistance in Ag/Si and Al/Si Schottky junctions
errVACUUM
IF3.9
err1998-07-01
err13
PREAI
errHorvath, ZJ; Adam, M; Pinter, I; Cvikl, B; Korosak, D; Mrdjen, T; Tuyen, VV; Makaro, Z; Ducso, C; Barsony, I
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