Huajun Sun - Publications, H-index & Citations

Huajun Sun

Huazhong University of Science and Technology

22H指数

67论文数

1.9K被引数

收录论文 25

发表时间

A Stacked Top Select Gate Architecture for High-Density 3D NAND Flash 一种用于高密度3D NAND闪存的堆叠顶选择栅极架构

IEEE Electron Device Letters

IF4.5

2026-08-28

PREAI

Ming Zeng; Jianquan Jia; Kun Zhang; Hengbo Xiao; Changtian Cao; Huajun Sun; Zongliang Huo

Stochasticity-by-Design in Memristive Materials for Probabilistic Computing and Hardware Security: Entropy Sources; Control Knobs; and Benchmarks

ACS Applied Electronic Materials

IF4.7

2026-02-04

PREAI

Daiyang Jiang; Changtian Cao; Junming Zhang; Ouwen Zhang; Chuqian Zhu; Jiyang Xu; Qinyan Zhang; Wenhao Li; Yumin Da; Xiangshui Miao; Zuhao Shi; Huajun Sun

Unveiling Phosphorus Vacancy-Mediated Resistive Switching in Cu/HfO2/BP/Pt Memristors: Experimental and First-Principles Investigations 揭示磷空位调控的Cu/HfO2/BP/Pt忆阻器中的阻变效应：实验与第一性原理研究

Journal of Physical Chemistry C

IF3.2

2026-01-01

PREAI

Daiyang Jiang; Zihao Yan; Changtian Cao; Ouwen Zhang; Wenhao Li; Zuhao Shi; Niannian Yu; Xiangshui Miao; Huajun Sun

2D materials-based flash memory device: mechanism; structure; application 基于2D材料闪存器件：机理；结构；应用

Mater. Horiz.

IF10.7

2025-07-23

PREAI

Xiangxiang Yu †; Langlang Xu †; Wenhao Shi †; Xiaohan Meng †; Xinyu Huang; Zhuiri Peng; Lei Tong; Huajun Sun; Xiangshui Miao; Lei Ye

Ferroelectric Compensation Effect of the Hard Electrode for the HfO2-ZrO2 Superlattice Films at the Low-Annealing Temperature HfO2-ZrO2超晶格薄膜中硬电极的铁电补偿效应在低退火温度下

ADVANCED ELECTRONIC MATERIALS

IF5.3

2025-02-17

OAAI

Zhu, CQ; Bai, N; Wang, YF; Sun, HJ; Zou, LQ; Yi, YH; Xu, JY; Ren, JW; Zhang, JM; Hu, S; Xue, KH; Ye, L; Cheng, WM; He, Q; Miao, XS

An ion-gating synaptic memristor based on tri-layer HfOx composition regulation

JOURNAL OF MATERIALS CHEMISTRY C

IF5.1

2025-01-01

PREAI

Zou, Lanqing; Zhang, Junming; Yi, Yunhui; Ren, Jiawang; Sun, Huajun; Zhu, Chuqian; Xu, Jiyang; Hu, Sheng; Ye, Lei; Cheng, Weiming; He, Qiang; Miao, Xiangshui

Tuning ferroelectric domains and polarization properties of flexible BiFeO3 thin films by phase transition engineering

JOURNAL OF ALLOYS AND COMPOUNDS

IF6.3

2024-12-01

PREAI

He, Jia; Xiao, Shibing; Sui, Huiting; Wu, Fuling; Li, Xiao; Yang, Cheng; Gong, Piyu; Zhu, Jianing; Liu, Xiaofang; Sun, Huajun

Phase transition kinetics and sublayer optimization of HfO2/ZrO2 superlattice ferroelectric thin films

APPLIED PHYSICS LETTERS

IF3.6

2024-08-19

PREAI

Wang, Yufan; Zhu, Chuqian; Sun, Huajun; Wang, Wenlin; Zou, Lanqing; Yi, Yunhui; Xu, Jiyang; Ren, Jiawang; Hu, Sheng; Ye, Lei; Cheng, Weiming; He, Qiang; Miao, Xiangshui

Ultra-low power consumption and favorable reliability Mn-doped BiFeO3 resistance-switching devices via tunable oxygen vacancy

CERAMICS INTERNATIONAL

IF5.6

2023-03-01

PREAI

Zhao, Yuwei; Su, Rui; Cheng, Lele; Cheng, Min; Cheng, Weiming; Tong, Hao; Sun, Huajun; Yan, Junbing; Miao, Xiangshui

Ferroelectricity in HfO2 from a Coordination Number Perspective

CHEMISTRY OF MATERIALS

IF7

2022-12-21

PREAI

Yuan, Jun-Hui; Mao, Ge-Qi; Xue, Kan-Hao; Bai, Na; Wang, Chengxu; Cheng, Yan; Lyu, Hangbing; Sun, Huajun; Wang, Xingsheng; Miao, Xiangshui

Evolution of the conductive filament system in HfO2-based memristors observed by direct atomic-scale imaging 通过直接原子尺度成像观察HfO2-based忆阻器中导电丝系统的演化

NATURE COMMUNICATIONS

IF15.7

2021-12-13

144

OAAI

Zhang, Ying; Mao, Ge-Qi; Zhao, Xiaolong; Li, Yu; Zhang, Meiyun; Wu, Zuheng; Wu, Wei; Sun, Huajun; Guo, Yizhong; Wang, Lihua; Zhang, Xumeng; Liu, Qi; Lv, Hangbing; Xue, Kan-Hao; Xu, Guangwei; Miao, Xiangshui; Long, Shibing; Liu, Ming

Multilevel switching in Mg-doped HfOx memristor through the mutual-ion effect

APPLIED PHYSICS LETTERS

IF3.6

2021-10-13

PREAI

Li, Li-Heng; Xue, Kan-Hao; Zou, Lan-Qing; Yuan, Jun-Hui; Sun, Huajun; Miao, Xiangshui

Novel III-V semiconductor epitaxy for optoelectronic devices through two-dimensional materials 通过二维材料用于光电器件的新型iii-v半导体外延

PROGRESS IN QUANTUM ELECTRONICS

IF12.5

2021-03-01

PREAI

Zhao, Chao; Li, Zhaonan; Tang, Tianyi; Sun, Jiaqian; Zhan, Wenkang; Xu, Bo; Sun, Huajun; Jiang, Hui; Liu, Kong; Qu, Shengchun; Wang, Zhijie; Wang, Zhanguo

Homo-layer hafnia-based memristor with large analog switching window

APPLIED PHYSICS LETTERS

IF3.6

2021-01-27

PREAI

Bai, Na; Tian, Baoyi; Mao, Ge-Qi; Xue, Kan-Hao; Wang, Tao; Yuan, Jun-Hui; Liu, Xiaoxin; Li, Zhaonan; Guo, Shen; Zhou, Zuopai; Liu, Nian; Lu, Hong; Tang, Xiaodong; Sun, Huajun; Miao, Xiangshui

Nonvolatile Resistive Switching Memory Device Employing CdSe/CdS Core/Shell Quantum Dots as an Electrode Modification Layer

ACS APPLIED ELECTRONIC MATERIALS

IF4.7

2020-03-04

PREAI

Guo, Jianwei; Guo, Shen; Su, Xiaoming; Zhu, Sheng; Pang, Yue; Luo, Wei; Zhang, Jianbing; Sun, Huajun; Li, Honglang; Zhang, Daoli

Performance enhancement of TaOx resistive switching memory using graded oxygen content

APPLIED PHYSICS LETTERS

IF3.6

2018-10-29

PREAI

Wang, B.; Xue, K. H.; Sun, H. J.; Li, Z. N.; Wu, W.; Yan, P.; Liu, N.; Tian, B. Y.; Liu, X. X.; Miao, X. S.

Customized binary and multi-level HfO2-x-based memristors tuned by oxidation conditions

SCIENTIFIC REPORTS

IF3.9

2017-08-30

OAAI

He, Weifan; Sun, Huajun; Zhou, Yaxiong; Lu, Ke; Xue, Kanhao; Miao, Xiangshui

Realization of Functional Complete Stateful Boolean Logic in Memristive Crossbar 忆阻交叉开关中功能完整状态布尔逻辑的实现

ACS APPLIED MATERIALS & INTERFACES

IF8.2

2016-12-07

PREAI

Li, Yi; Zhou, Ya-Xiong; Xu, Lei; Lu, Ke; Wang, Zhuo-Rui; Duan, Nian; Jiang, Lei; Cheng, Long; Chang, Ting-Chang; Chang, Kuan-Chang; Sun, Hua-Jun; Xue, Kan-Hao; Miao, Xiang-Shui

Conductance quantization in an AgInSbTe-based memristor at nanosecond scale

APPLIED PHYSICS LETTERS

IF3.6

2016-10-13

PREAI

Jiang, L.; Xu, L.; Chen, J. W.; Yan, P.; Xue, K. H.; Sun, H. J.; Miao, X. S.

Conducting mechanisms of forming-free TiW/Cu2O/Cu memristive devices

APPLIED PHYSICS LETTERS

IF3.6

2015-08-25

PREAI

Yan, P.; Li, Y.; Hui, Y. J.; Zhong, S. J.; Zhou, Y. X.; Xu, L.; Liu, N.; Qian, H.; Sun, H. J.; Miao, X. S.

研究方向