Vikas Rana - Publications, H-index & Citations

Vikas Rana

helmholtz association

20H指数

90论文数

2.4K被引数

收录论文 15

发表时间

veriSiM: Formal Verification of SPICE Netlists for MAGIC-Based Logic-in-Memory veriSiM：基于MAGIC的存内逻辑SPICE网表的正式验证

IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems

IF2.9

2026-02-01

PREAI

Jha, Chandan Kumar; Singh, Simranjeet; Qayyum, Khushboo; Bende, Ankit; Hassan, Muhammad; Rana, Vikas; Merchant, Farhad; Drechsler, Rolf

Analysis and Design of Multitasking Memristor Cellular Nonlinear Networks 多任务忆阻器细胞神经网络的分析与设计

ieee transactions on circuits and systems i: regular papers

IF0

2025-10-28

PREAI

Vasileios Ntinas; Dimitrios Prousalis; Yongmin Wang; Ahmet Samil Demirkol; Ioannis Messaris; Vikas Rana; Stephan Menzel; Alon Ascoli; Ronald Tetzlaff

Exploiting Read Noise of Filamentary VCM ReRAM for Robust TRNG 利用丝状VCM ReRAM的读出噪声实现稳健的TRNG

IEEE Transactions on Electron Devices

IF3.2

2025-09-25

OAAI

Kristoffer Schnieders; Peixuan Bai; Yongmin Wang; Tim Kempen; Alexandros Sarantopoulos; Dirk Wouters; Vikas Rana; Regina Dittmann; Rainer Waser; Stephan Menzel; Stefan Wiefels

It's Getting Hot in Here: Hardware Security Implications of Thermal Crosstalk on ReRAMs

IEEE TRANSACTIONS ON RELIABILITY

IF5.7

2024-01-01

PREAI

Staudigl, Felix; Al Indari, Hazem; Schoen, Daniel; Chen, Hsin-Yu; Sisejkovic, Dominik; Joseph, Jan Moritz; Rana, Vikas; Menzel, Stephan; Hagelauer, Amelie; Leupers, Rainer

Toward Simplified Physics-Based Memristor Modeling of Valence Change Mechanism Devices

IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS II-EXPRESS BRIEFS

IF4.9

2022-05-01

PREAI

Ntinas, Vasileios; Ascoli, Alon; Messaris, Ioannis; Wang, Yongmin; Rana, Vikas; Menzel, Stephan; Tetzlaff, Ronald

Standards for the Characterization of Endurance in Resistive Switching Devices

ACS NANO

IF16

2021-11-03

155

OAAI

Lanza, Mario; Waser, Rainer; Ielmini, Daniele; Yang, J. Joshua; Goux, Ludovic; Sune, Jordi; Kenyon, Anthony Joseph; Mehonic, Adnan; Spiga, Sabina; Rana, Vikas; Wiefels, Stefan; Menzel, Stephan; Valov, Ilia; Villena, Marco A.; Miranda, Enrique; Jing, Xu; Campabadal, Francesca; Gonzalez, Mireia B.; Aguirre, Fernando; Palumbo, Felix; Zhu, Kaichen; Roldan, Juan Bautista; Puglisi, Francesco Maria; Larcher, Luca; Hou, Tuo-Hung; Prodromakis, Themis; Yang, Yuchao; Huang, Peng; Wan, Tianqing; Chai, Yang; Pey, Kin Leong; Raghavan, Nagarajan; Duenas, Salvador; Wang, Tao; Xia, Qiangfei; Pazos, Sebastian

Electrochemical metallization ReRAMs (ECM)-Experiments and modelling: general discussion

FARADAY DISCUSSIONS

IF3.1

2019-01-01

OAAI

Ambrosi, Elia; Bartlett, Philip; Berg, Alexandra I.; Brivio, Stefano; Burr, Geoffrey; Deswal, Sweety; Deuermeier, Jonas; Haga, Masa-aki; Kiazadeh, Asal; Kissling, Gabriela; Kozicki, Michael; Foroutan-Nejad, Cina; Gale, Ella; Gonzalez-Velo, Yago; Goossens, Anouk; Goux, Ludovic; Hasegawa, Tsuyoshi; Hilgenkamp, Hans; Huang, Ruomeng; Ibrahim, Sherif; Ielmini, Daniele; Kenyon, Anthony J.; Kolosov, Vladimir; Li, Yang; Majumdar, Sayani; Milano, Gianluca; Prodromakis, Themis; Raeishosseini, Niloufar; Rana, Vikas; Ricciardi, Carlo; Santamaria, Monica; Shluger, Alexander; Valov, Ilia; Waser, Rainer; Williams, R. Stanley; Wouters, Dirk; Yang, Yuchao; Zaffora, Andrea

Reduction of the forming voltage through tailored oxygen non-stoichiometry in tantalum oxide ReRAM devices

SCIENTIFIC REPORTS

IF3.9

2018-07-18

OAAI

Skaja, Katharina; Andrae, Michael; Rana, Vikas; Waser, Rainer; Dittmann, Regina; Baeumer, Christoph

Multi-valued and Fuzzy Logic Realization using TaOx Memristive Devices

SCIENTIFIC REPORTS

IF3.9

2018-01-08

OAAI

Bhattacharjee, Debjyoti; Kim, Wonjoo; Chattopadhyay, Anupam; Waser, Rainer; Rana, Vikas

Multistate Memristive Tantalum Oxide Devices for Ternary Arithmetic

SCIENTIFIC REPORTS

IF3.9

2016-11-11

OAAI

Kim, Wonjoo; Chattopadhyay, Anupam; Siemon, Anne; Linn, Eike; Waser, Rainer; Rana, Vikas

Realization of Minimum and Maximum Gate Function in Ta2O5-based Memristive Devices

SCIENTIFIC REPORTS

IF3.9

2016-04-05

OAAI

Breuer, Thomas; Nielen, Lutz; Roesgen, Bernd; Waser, Rainer; Rana, Vikas; Linn, Eike

Impact of oxygen exchange reaction at the ohmic interface in Ta2O5-based ReRAM devices

NANOSCALE

IF5.1

2016-01-01

119

PREAI

Kim, Wonjoo; Menzel, Stephan; Wouters, Dirk J.; Guo, Yuzheng; Robertson, John; Roesgen, Bernd; Waser, Rainer; Rana, Vikas

Nanoscale cation motion in TaOx, HfOx and TiOx memristive systems TaOx，HfOx和TiOx忆阻系统中的纳米级阳离子运动

NATURE NANOTECHNOLOGY

IF34.9

2015-09-28

528

PREAI

Wedig, Anja; Luebben, Michael; Cho, Deok-Yong; Moors, Marco; Skaja, Katharina; Rana, Vikas; Hasegawa, Tsuyoshi; Adepalli, Kiran K.; Yildiz, Bilge; Waser, Rainer; Valov, Ilia

Realization of Boolean Logic Functionality Using Redox-Based Memristive Devices

ADVANCED FUNCTIONAL MATERIALS

IF19

2015-06-18

135

OAAI

Siemon, Anne; Breuer, Thomas; Aslam, Nabeel; Ferch, Sebastian; Kim, Wonjoo; van den Hurk, Jan; Rana, Vikas; Hoffmann-Eifert, Susanne; Waser, Rainer; Menzel, Stephan; Linn, Eike

Bilayer Ohmic Electrode Engineering in TaO_X ReRAM Devices TaO_X ReRAM器件中的双层欧姆电极工程

IEEE Electron Device Letters

IF4.5

OAAI

Godwin Paul; Tom Glint; Stephan Menzel; Vikas Rana

研究方向