logo
科言猫学术研究的AI总结
language
手机端手机端
  • Phone Feature微信小程序
简体中文简体中文
notice消息通知
博客博客
delete
arrow
返回
S

Sriram Krishnamoorthy

United States Air Force

56H指数
505论文数
1.0W被引数
收录论文 91
发表时间
logo
β-Ga2O3 MOSFETs on highly uniform 2-in. unintentionally doped vertical Bridgman substrates高均匀性2英寸无意掺杂垂直布里奇曼衬底上的β-Ga2O3 MOSFETs
errJOURNAL OF VACUUM SCIENCE & TECHNOLOGY A
IF2.1
err2026-05-01
err0
PREAI
errSowers, Elizabeth; Liddy, Kyle; Bhattacharyya, Arkka; Ueda, Yuki; Islam, Ahmad; Piel, Joshua J.; Chabak, Kelson D.; Igarashi, Takuya; Koshi, Kimiyoshi; Yamakoshi, Shigenobu; Sasaki, Kohei; Kuramata, Akito; Krishnamoorthy, Sriram; Green, Andrew J.
err分享
err收藏
High Responsivity Optically-Triggered Vertical GaN Heterojunction Power Switches With kHz Operation高响应度光触发垂直GaN异质结功率开关，具有kHz运行能力
errIEEE Electron Device Letters
IF4.5
err2026-01-05
err0
PREAI
errJung-Han Hsia; Zhongyunshen Zhu; Yizheng Liu; John Niroula; Minsik Oh; Joshua Andrew Perozek; Joseph Park; Sriram Krishnamoorthy; Tomás Palacios
err分享
err收藏
Multi-Fin β-Ga2O3 Vertical FinFET With Interfin Field Oxide Exhibiting a Breakdown Voltage of 1.8 kV and Power Figure of Merit of 1 GW/cm2多鳍 β-Ga2O3 垂直FinFET，鳍间场氧化物的击穿电压为1.8 kV，功率品质因数为1 GW/cm2
errIEEE Electron Device Letters
IF4.5
err2025-12-08
err0
PREAI
errSaurav Roy; Chinmoy N. Saha; Carl Peterson; William J. Mitchell; James S. Speck; Sriram Krishnamoorthy
err分享
err收藏
Kilovolt-class β-Ga2O3 field-plated Schottky barrier diodes with MOCVD-grown intentionally 1015 cm-3 doped drift layers千伏级的β-Ga2O3场板肖特基势垒二极管，其漂移层为MOCVD生长的故意掺杂浓度为1015 cm-3的层
errJOURNAL OF APPLIED PHYSICS
IF2.5
err2025-11-14
err0
PREAI
errPeterson, Carl; Saha, Chinmoy Nath; Kahler, Rachel; Liu, Yizheng; Mattapalli, Akhila; Roy, Saurav; Krishnamoorthy, Sriram
err分享
err收藏
Evidence for Ga clusters in β-Ga2O3 from Raman spectroscopy and density functional theory来自拉曼光谱和密度泛函理论关于β-Ga₂O₃中Ga团簇的证据
errJOURNAL OF APPLIED PHYSICS
IF2.5
err2025-10-07
err0
errOAAI
errHuso, Jesse; Dutton, Benjamin; Remple, Cassandra; McCluskey, Matthew D.; McCloy, John S.; Bhattacharyya, Arkka; Krishnamoorthy, Sriram; Rebollo, Steve; Speck, James S.; Varley, Joel B.; Voss, Lars F.
err分享
err收藏
Growth of nitrogen-doped (010) β-Ga2O3 by plasma-assisted molecular beam epitaxy using an O2/N2 gas mixture
errAPPLIED PHYSICS LETTERS
IF3.6
err2025-02-25
err0
PREAI
errRebollo, Steve; Liu, Yizheng; Peterson, Carl; Krishnamoorthy, Sriram; Speck, James S.
err分享
err收藏
Dielectric reliability and interface trap characterization in MOCVD grown in situ Al2O3 on β-Ga2O3
errAPPLIED PHYSICS LETTERS
IF3.6
err2025-01-03
err0
PREAI
errRoy, Saurav; Bhattacharyya, Arkka; Peterson, Carl; Krishnamoorthy, Sriram
err分享
err收藏
200 cm2/Vs electron mobility and controlled low 1015 cm-3 Si doping in (010) β-Ga2O3 epitaxial drift layers
errAPPLIED PHYSICS LETTERS
IF3.6
err2024-10-30
err6
PREAI
errPeterson, Carl; Bhattacharyya, Arkka; Chanchaiworawit, Kittamet; Kahler, Rachel; Roy, Saurav; Liu, Yizheng; Rebollo, Steve; Kallistova, Anna; Mates, Thomas E.; Krishnamoorthy, Sriram
err分享
err收藏
Effective uniaxial dielectric function tensor and optical phonons in (201)-oriented β-Ga2O3 films with equally distributed sixfold-rotation domains
errPHYSICAL REVIEW APPLIED
IF4.4
err2024-10-02
err0
PREAI
errMock, Alyssa; Richter, Steffen; Papamichail, Alexis; Stanishev, Vallery; Ghezellou, Misagh; Ul-Hassan, Jawad; Popp, Andreas; Bin Anooz, Saud; Gogova, Daniela; Ranga, Praneeth; Krishnamoorthy, Sriram; Korlacki, Rafal; Schubert, Mathias; Darakchieva, Vanya
err分享
err收藏
Utilizing (Al, Ga)2O3/Ga2O3 superlattices to measure cation vacancy diffusion and vacancy-concentration-dependent diffusion of Al, Sn, and Fe in β-Ga2O3
errAPL MATERIALS
IF4.5
err2024-08-30
err0
errOAAI
errRock, Nathan D.; Yang, Haobo; Eisner, Brian; Levin, Aviva; Bhattacharyya, Arkka; Krishnamoorthy, Sriram; Ranga, Praneeth; Walker, Michael A.; Wang, Larry; Cheng, Ming Kit; Zhao, Wei; Scarpulla, Michael A.
err分享
err收藏
Heated-H3PO4 etching of (001) β-Ga2O3
errAPPLIED PHYSICS LETTERS
IF3.6
err2024-07-01
err1
PREAI
errRebollo, Steve; Itoh, Takeki; Krishnamoorthy, Sriram; Speck, James S.
err分享
err收藏
Kilovolt-class β-Ga2O3 MOSFETs on 1-in. bulk substrates
errAPPLIED PHYSICS LETTERS
IF3.6
err2024-02-22
err7
PREAI
errPeterson, Carl; Alema, Fikadu; Bhattacharyya, Arkka; Ling, Ziliang; Roy, Saurav; Osinsky, Andrei; Krishnamoorthy, Sriram
err分享
err收藏
Ultra-low reverse leakage in large area kilo-volt class β-Ga2O3 trench Schottky barrier diode with high-k dielectric RESURF (vol 123, 243502, 2023)
errAPPLIED PHYSICS LETTERS
IF3.6
err2024-01-08
err0
errOAAI
errRoy, Saurav; Kostroun, Benjamin; Cooke, Jacqueline; Liu, Yizheng; Bhattacharyya, Arkka; Peterson, Carl; Sensale-Rodriguez, Berardi; Krishnamoorthy, Sriram
err分享
err收藏
Over 6 μm thick MOCVD-grown low-background carrier density (1015 cm-3) high-mobility (010) β-Ga2O3 drift layers
errAPPLIED PHYSICS LETTERS
IF3.6
err2024-01-04
err15
PREAI
errBhattacharyya, Arkka; Peterson, Carl; Chanchaiworawit, Kittamet; Roy, Saurav; Liu, Yizheng; Rebollo, Steve; Krishnamoorthy, Sriram
err分享
err收藏
Ultra-low reverse leakage in large area kilo-volt class β-Ga2O3 trench Schottky barrier diode with high-k dielectric RESURF
errAPPLIED PHYSICS LETTERS
IF3.6
err2023-12-11
err20
errOAAI
errRoy, Saurav; Kostroun, Benjamin; Cooke, Jacqueline; Liu, Yizheng; Bhattacharyya, Arkka; Peterson, Carl; Sensale-Rodriguez, Berardi; Krishnamoorthy, Sriram
err分享
err收藏
Vertical PtOx/Pt/β-Ga2O3 Schottky diodes with high permittivity dielectric field plate for low leakage and high breakdown voltage
errAPPLIED PHYSICS LETTERS
IF3.6
err2023-11-06
err23
PREAI
errFarzana, Esmat; Roy, Saurav; Hendricks, Nolan S.; Krishnamoorthy, Sriram; Speck, James S.
err分享
err收藏
2.1 kV (001)-β-Ga2O3 vertical Schottky barrier diode with high-k oxide field plate
errAPPLIED PHYSICS LETTERS
IF3.6
err2023-04-10
err51
errOAAI
errRoy, Saurav; Bhattacharyya, Arkka; Peterson, Carl; Krishnamoorthy, Sriram
err分享
err收藏
Enhancing the electron mobility in Si-doped (010) β-Ga2O3 films with low-temperature buffer layers
errAPL MATERIALS
IF4.5
err2023-02-23
err33
errOAAI
errBhattacharyya, Arkka; Peterson, Carl; Itoh, Takeki; Roy, Saurav; Cooke, Jacqueline; Rebollo, Steve; Ranga, Praneeth; Sensale-Rodriguez, Berardi; Krishnamoorthy, Sriram
err分享
err收藏
Ultra-Wide Band Gap Ga2O3-on-SiC MOSFETs
errACS APPLIED MATERIALS & INTERFACES
IF8.2
err2023-01-26
err23
PREAI
errSong, Yiwen; Bhattacharyya, Arkka; Karim, Anwarul; Shoemaker, Daniel; Huang, Hsien-Lien; Roy, Saurav; McGray, Craig; Leach, Jacob H.; Hwang, Jinwoo; Krishnamoorthy, Sriram; Choi, Sukwon
err分享
err收藏
Oxidized metal Schottky contact with high-κ dielectric field plate for low-loss high-power vertical β-Ga2O3 Schottky diodes用于低损耗高功率垂直 β-Ga2O3肖特基二极管的高 κ 介质场板的氧化金属肖特基接触
errAPL MATERIALS
IF4.5
err2022-11-02
err19
errOAAI
errFarzana, Esmat; Bhattacharyya, Arkka; Hendricks, Nolan S.; Itoh, Takeki; Krishnamoorthy, Sriram; Speck, James S.
err分享
err收藏

研究方向

暂时未获取到该数据
合作学者
合作期刊
J
James S. Speck
H 指数: 120 · 论文数: 1.5K
M
Matthias Troyer
H 指数: 95 · 论文数: 597
T
Tomás Palacios
H 指数: 87 · 论文数: 494
M
Marius Grundmann
H 指数: 86 · 论文数: 999
L
Lu Ma
H 指数: 83 · 论文数: 393
查看更多