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Xuanhu Chen

Shandong University

H指数:31

被引数:3,591

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Investigation of the surface band structure and the evolution of defects in β-(AlxGa1-x)2O3

APPLIED PHYSICS LETTERS

IF3.6

2024-03-141

PRE

Hybrid plasmonic-dielectric metal-nanowire coupler for high-efficiency broadband nonlinear frequency conversion

PHOTONICS RESEARCH

IF7.2

2022-09-267

PRE

Photoconductive and photovoltaic metal-semiconductor-metal κ-Ga2O3 solar-blind detectors with high rejection ratios

JOURNAL OF PHYSICS D-APPLIED PHYSICS

IF3.2

2022-07-2113

PRE

Band alignment and polarization engineering in κ-Ga2O3/GaN ferroelectric heterojunction

SCIENCE CHINA-PHYSICS MECHANICS & ASTRONOMY

IF7.5

2022-05-3018

PRE

Unlocking the Single-Domain Heteroepitaxy of Orthorhombic κ-Ga2O3 via Phase Engineering

ACS APPLIED ELECTRONIC MATERIALS

IF4.7

2021-12-2013

PRE

Toward emerging gallium oxide semiconductors: A roadmap

FUNDAMENTAL RESEARCH

IF6.3

2021-11-0193

OAAI

Strain-driven phase manipulation of α- and κ-Ga2O3 by nanoepitaxial lateral overgrowth on embedded α-In2O3 submicron dots

APPLIED PHYSICS LETTERS

IF3.6

2021-11-015

PRE

A self-powered solar-blind photodetector based on polyaniline/α-Ga2O3 p-n heterojunction

基于聚苯胺/α-Ga2O3 p-n异质结的自发电型太阳盲光电探测器

APPLIED PHYSICS LETTERS

IF3.6

2021-10-0429

PRE

In situ heteroepitaxial construction and transport properties of lattice-matched α-Ir2O3/α-Ga2O3 p-n heterojunction

APPLIED PHYSICS LETTERS

IF3.6

2021-06-2835

PREAI

β-Ga2O3 vertical heterojunction barrier Schottky diodes terminated with p-NiO field limiting rings

APPLIED PHYSICS LETTERS

IF3.6

2021-05-17106

PREAI

Band Alignment and Enhanced Interfacial Conductivity Manipulated by Polarization in a Surfactant-Mediated Grown κ-Ga2O3/In2O3 Heterostructure

ACS APPLIED ELECTRONIC MATERIALS

IF4.7

2021-01-1823

PREAI

Deep-level defects in gallium oxide

JOURNAL OF PHYSICS D-APPLIED PHYSICS

IF3.2

2020-11-0390

PRE

Anisotropy and in-plane polarization of low-symmetrical β-Ga2O3 single crystal in the deep ultraviolet band

APPLIED SURFACE SCIENCE

IF6.9

2020-10-0123

PREAI

Misfit epitaxial strain manipulated transport properties in cubic In2O3 hetero-epilayers

APPLIED PHYSICS LETTERS

IF3.6

2020-09-103

PREAI

A 1.86-kV double-layered NiO/β-Ga2O3 vertical p-n heterojunction diode

APPLIED PHYSICS LETTERS

IF3.6

2020-07-14200

PREAI

Ellipsometric determination of anisotropic optical constants of single phase Ga2O3 thin films in its orthorhombic and monoclinic phases

OPTICAL MATERIALS

IF4.2

2020-04-0128

PREAI

Anion Engineering Enhanced Response Speed and Tunable Spectral Responsivity in Gallium-Oxynitrides-Based Ultraviolet Photodetectors

基于氮氧化镓的紫外光电探测器中阴离子工程增强的响应速度和可调的光谱响应度

ACS APPLIED ELECTRONIC MATERIALS

IF4.7

2020-02-0621

PREAI

Charge transfer dynamics of the CdTe quantum dots fluorescence quenching induced by ferrous (II) ions

APPLIED PHYSICS LETTERS

IF3.6

2020-01-0610

PREAI

Band alignment and band bending at α-Ga2O3/ZnO n-n isotype hetero-interface

APPLIED PHYSICS LETTERS

IF3.6

2019-11-1136

PREAI

On the origin of dislocation generation and annihilation in α-Ga2O3 epilayers on sapphire

APPLIED PHYSICS LETTERS

IF3.6

2019-10-2853

PREAI