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Q

Qingqing Sun

fudan university

45H指数
362论文数
8.0K被引数
收录论文 144
发表时间
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PDA-Processed Hafnium-Based Capacitors with Ultrahigh-k (~81) Enabled by Capping Layers for Capacitive Memory ApplicationsPDA处理的铪基电容器，通过封顶层实现超-high-k（~81），适用于电容性存储器应用
errIEEE Electron Device Letters
IF4.5
err2026-08-20
err0
PREAI
errXingcan Guo; Lei Wang; Kangli Xu; Chao Wu; Ruihong Yuan; Aolin Yuan; Hao Zhu; Qingqing Sun; David Wei Zhang; Jiajie Yu; Zhenhai Li; Lin Chen
err分享
err收藏
A Multifunctional Optoelectronic Memristor Integrating Perception, Computing, and Self-Protective Functionality多功能光电忆阻器集成感知、计算和自保护功能
errIEEE Electron Device Letters
IF4.5
err2026-08-06
err0
PREAI
errBingqi Cai; Chen Wang; Kun Chen; Qingqing Sun; David Wei Zhang; Lin Chen
err分享
err收藏
CMP-Free Organic Hybrid Bonding Based on Mechanical Interlock Structure via Surface Treatments for 3-D Integration无化学机械抛光（CMP）的基于机械互锁结构的有机混合键合技术及其表面处理方法用于三维集成
errIEEE Electron Device Letters
IF4.5
err2026-07-28
err0
PREAI
errJinzhu Li; Qicun Lou; Xinyao Wang; Mingze Ban; Wenchao Wang; Ziyu Liu; Hao Zhu; Qingqing Sun; Lin Chen; Yabin Sun; David Wei Zhang
err分享
err收藏
Ni-Based Metal Cavities-Mediated Ensemble Effect for Catalytic Hydroconversion of Lignin into Aromatic Monomers镍基金属空腔介导的协同效应催化木质素转化为芳香单体
errADVANCED SYNTHESIS & CATALYSIS
IF4
err2026-05-26
err0
PREAI
errZhong-Qiu Liu; Shi-Qi Jin; Qing–Qing Sun; Yu-Jing Liu; An-Guo Ying; Long-Yu Zhang; Xing-Shun Cong; Mei-Xia Zhao; Xiao-Long Zhang
err分享
err收藏
Flexible Floating-Gate Optoelectronic Synaptic Transistor for Neuromorphic Visual Processing柔性浮栅光电突触晶体管用于神经形态视觉处理
errIEEE Electron Device Letters
IF4.5
err2026-05-25
err0
PREAI
errQingxuan Li; Bin Cui; Siwei Wang; Qingqing Sun; David Wei Zhang; Lin Chen
err分享
err收藏
Ultralow Power Optoelectronic Reconfigurable Hf0.2Zr0.8Ox-Based Antiferroelectric Device for Adaptive Image Recognition超低功耗光电可重构Hf0.2Zr0.8Ox基反铁电器件用于自适应图像识别
errACS Applied Materials & Interfaces
IF0
err2026-05-05
err0
PREAI
errChen Lu; Pei Liu; Kangli Xu; Shaotian Zhang; Jiaming Liu; Jiajie Yu; Jieru Song; Yuanhong Ding; Jialin Meng; Tianyu Wang; Hao Zhu; Qingqing Sun; David Wei Zhang; Lin Chen
err分享
err收藏
Polarity-Dependent Electric Field Modulation via Depletion Region Punchthrough in IGBTs Under Gate-Collector Coupled Stress通过门极-集电极耦合应力下IGBT耗尽区穿通进行极性依赖的电场调制
errIEEE Transactions on Electron Devices
IF3.2
err2026-03-18
err0
PREAI
errDong Zou; Yanghao Wang; Peng Liao; Xinru Chen; Changhao Wang; Jianbin Guo; Qingqing Sun; Hang Xu; David Wei Zhang
err分享
err收藏
Statistical Modeling and Prediction of Hot-Carrier Degradation in Nanoscale FinFETs纳米鳍式场效应晶体管中热载流子退化的统计建模与预测
errIEEE Transactions on Electron Devices
IF3.2
err2026-03-17
err0
PREAI
errXin Xu; Wendi Wei; Xianghui Li; Kun Chen; Meng Li; Yi Gu; Chen Wang; Hao Zhu; Qingqing Sun; David Wei Zhang
err分享
err收藏
Symmetric Phase-Engineered Hf1-xZrxO2 Enabling Reliable Non-Destructive Memory Readout对称相工程化 Hf1-xZrxO2 实现可靠的非破坏性存储器读出
errIEEE Electron Device Letters
IF4.5
err2026-03-04
err0
PREAI
errBinjie Weng; Kangli Xu; Yongkai Liu; Jiajie Yu; Tianyu Wang; Hao Zhu; Qingqing Sun; David Wei Zhang; Lin Chen
err分享
err收藏
Achieving Enhanced Ferroelectricity and Reliability in HZO/ZrO2 Superlattices With Back-End-of-Line Process在HZE/ZrO2超晶格中通过后端晶圆工艺实现增强的铁电性和可靠性
errIEEE Electron Device Letters
IF4.5
err2026-02-27
err0
PREAI
errXingcan Guo; Kangli Xu; Ruihong Yuan; Yongkai Liu; Hao Zhu; Qingqing Sun; David Wei Zhang; Tianyu Wang; Jiajie Yu; Zhenhai Li; Lin Chen
err分享
err收藏
Fiber-Shaped Optoelectronic Synaptic Device for Neuromorphic Computing in Electronic Textiles纤维状光电突触器件在电子纺织品中的神经形态计算
errIEEE Electron Device Letters
IF4.5
err2026-01-15
err0
PREAI
errJieru Song; Jialin Meng; Chen Lu; Tianyu Wang; Hao Zhu; Qingqing Sun; Peining Chen; David Wei Zhang; Lin Chen
err分享
err收藏
An Area-Efficient SiC-MOSFET Termination Optimization Method Based on Deep Learning and Specified MOPSO Algorithm基于深度学习和指定MOPSO算法的SiC-MOSFET终端区域高效优化方法
errIEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems
IF2.9
err2026-01-05
err0
PREAI
errBang-Min Zhu; Yang-Hao Wang; Jian-Bin Guo; Peng Liao; Qing-Qing Sun; David Wei Zhang; Hang Xu
err分享
err收藏
A Multifunctional Self-Rectifying Memristor Enabling LIF Neuron and Nociceptor Behaviors
errIEEE ELECTRON DEVICE LETTERS
IF4.5
err2025-12-01
err0
PREAI
errCai, Bingqi; Wang, Chen; Chen, Kun; Sun, Qingqing; Zhang, David Wei; Chen, Lin
err分享
err收藏
Aging mitigation of FinFET-based DFF through transistor-level analysis基于FinFET的DFF的寿命延长通过晶体管级分析
errMicroelectronics Reliability
IF1.9
err2025-12-01
err0
PREAI
errLi, Meng; Xu, Xin; Li, Yunpeng; Shi, Yiqun; Sun, Qingqing; Zhu, Hao
err分享
err收藏
One-Step Annealing-Configured Hf0.2Zr0.8O2 Memristive-Antiferroelectric Devices for Bioinspired CSNN Neuromorphic Computing一步退火配置的Hf0.2Zr0.8O2忆阻反铁电器件，用于生物启发的CSNN神经形态计算
errNANO LETTERS
IF9.1
err2025-12-01
err0
PREAI
errZhang, Jinhao; Xu, Kangli; Lu, Chen; Lu, Lin; Chen, Qingxin; Li, Zhigang; Liu, Yongkai; Yu, Jiajie; Meng, Jialin; Sun, Qingqing; Zhang, David Wei; Wang, Tianyu; Chen, Lin
err分享
err收藏
KAT2A accelerates lung cancer progression through succinylation of TGFβR2KAT2A通过使TGFβR2发生琥珀酰化来加速肺癌进展
errTissue and Cell
IF2.5
err2025-11-28
err0
PREAI
errMingqiang Shen; Qingqing Sun; Jinjiao Zhang; Tengfang Zhang; Lei Zhang
err分享
err收藏
Universal Time-Dependent DIBL Model for HCD-Degraded FinFETs适用于HCD劣化FinFETs的通用时变DIBL模型
errIEEE Transactions on Electron Devices
IF3.2
err2025-11-14
err0
PREAI
errYi Gu; Wendi Wei; Kun Chen; Chen Wang; Qingqing Sun; David Wei Zhang
err分享
err收藏
A Buffer-in-Loop NS-SAR ADC With CDAC Sharing-Error Feedback Structure and kT/C Noise Cancellation in 0.18-μm CMOS Technology一种带CDAC共享误差反馈结构和kT/C噪声消除的缓冲器-环路NS-SAR ADC，采用0.18-μm CMOS工艺
errIEEE Transactions on Very Large Scale Integration (VLSI) Systems
IF3.1
err2025-10-30
err0
PREAI
errZirui Cui; Yiqun Shi; Qingqing Sun; Hao Zhu
err分享
err收藏
Mechanical response and failure analysis of X80 buried pipeline under fault actionX80埋地管道在断层作用下的力学响应与失效分析
errEngineering Failure Analysis
IF5.7
err2025-10-17
err0
PREAI
errJinyang Yu; Wei Yan; Ruixin Bao; Xinxin Zhou; Mengna Xu; Xinzhou Liu; Zhixin Li; Qingqing Sun; Yue Du; Meixin zhang; Haochen Han
err分享
err收藏
Back-End of Line Compatible HZO/ZrO2 Ferroelectric Capacitor Achieving 2Pr of 51.1 μC/cm2, High-k(~48.4), and Endurance Exceeding 1011 Cycles Under Low-Voltage Operation与后端工艺兼容的HZO/ZrO2铁电电容器，实现了51.1 μC/cm2的2Pr、高介电常数（~48.4），并在低压操作下具有超过1011次循环的耐久性。
errIEEE Electron Device Letters
IF4.5
err2025-09-17
err0
PREAI
errLei Wang; Kangli Xu; Yongkai Liu; Aolin Yuan; Jiajie Yu; Jialin Meng; Hao Zhu; Qingqing Sun; David Wei Zhang; Tianyu Wang; Lin Chen
err分享
err收藏

研究方向

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合作学者
合作期刊
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Leon O. Chua
H 指数: 126 · 论文数: 1.0K
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胡伟达 封面图
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张宇 封面图
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