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Quantitative Analysis on the Interaction Between Channel Carrier and Remote Trap in HfxZr1-xO2/SiO2 Interface in Ferroelectric Field-Effect-Transistor Lee, Haneul; Kim, Sujong; Han, Changhyeon; Kim, Haesung; Yang, Hyojin; Park, Sejun; Yun, Sanghyuk; Lee, Yoon Jung; Choi, Sung-Jin; Kim, Dae Hwan; Kim, Dong Myong; Kwon, Daewoong; Bae, Jong-Ho 分享 收藏
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Analog reservoir computing via ferroelectric mixed phase boundary transistors 通过铁电混合相边界晶体管进行模拟储层计算 Kim, Jangsaeng; Park, Eun Chan; Shin, Wonjun; Koo, Ryun-Han; Han, Chang-Hyeon; Kang, He Young; Yang, Tae Gyu; Goh, Youngin; Lee, Kilho; Ha, Daewon; Cheema, Suraj S.; Jeong, Jae Kyeong; Kwon, Daewoong 分享 收藏
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Ferroelectric polarization-switching acceleration of sputtered Hf0.5Zr0.5O2 with defect-induced polarization of interlayer 溅射Hf0.5Zr0.5O2的铁电极化转换加速与中间层的缺陷诱导极化 Han, Changhyeon; Yim, Jiyong; Nguyen, An; Kim, Jeonghan; Kwon, Ki Ryun; Kim, Sangwoo; Jeong, Soi; Park, Eun Chan; You, Ji Won; Choi, Rino; Kwon, Daewoong 分享 收藏
Effects of oxygen vacancies on ferroelectric characteristics of RF-sputtered Hf0.5Zr0.5O2 氧空位对射频溅射Hf0.5Zr0.5O2铁电特性的影响 Han, Changhyeon; Kwon, Ki Ryun; Kim, Jeonghan; Yim, Jiyong; Kim, Sangwoo; Park, Eun Chan; You, Ji Won; Jeong, Soi; Choi, Rino; Kwon, Daewoong 分享 收藏
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