Tiangui You

Shanghai Institute of Microsystem and Information Technology

H指数:24

被引数:1,763

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A Biomimetic Binocular Visual System Based on β-Ga₂O₃ Optoelectronic Synaptic Device for Motion Recognition

基于β-Ga₂O₃光电突触器件的仿生双目视觉系统用于运动识别

Advanced Optical Materials

IF7.2

2026-09-120

PRE

Fabrication of 4-inch single-crystalline InP thin film on Si substrate by ion-cutting technique with wafer bonding at elevated temperature

通过高温键合技术在Si衬底上采用离子切割技术制备4英寸单晶InP薄膜

Vacuum

IF3.9

2025-07-080

PRE

Dynamic performance enhancement in Ti/Au ohmic contacts on β-Ga2O3-on-SiC substrates: evidence from pulsed measurements

SCIENCE CHINA-INFORMATION SCIENCES

IF7.6

2024-12-170

PRE

Wafer-scale fabrication of single-crystalline calcium fluoride thin-film on insulator by ion-cutting

通过离子切割在绝缘体上制备单晶氟化钙薄膜的晶片规模

OPTICAL MATERIALS

IF4.2

2024-11-010

OAAI

Three-dimensional thermal analysis of heterogeneously integrated β-Ga2O3-on-SiC SBDs using Raman thermography and electrothermal modeling

APPLIED PHYSICS LETTERS

IF3.6

2024-06-211

PRE

Investigating the physical mechanism of ion-slicing in AlN and hetero-integrating AlN thin film on Si(100) substrate

Si(100) 衬底上AlN离子切片和异质集成AlN薄膜的物理机制研究

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING

IF4.6

2024-06-011

PRE

2.1 μm multi-quantum well laser epitaxially grown on on-axis (001) InP/SiO2/Si substrate fabricated by ion-slicing

通过离子切片在轴上 (001) InP/SiO2/Si衬底上外延生长2.1 μ m多量子阱激光器

OPTICS EXPRESS

IF3.3

2024-05-140

Elucidating the formation mechanisms of the parasitic channel with buffer-free GaN/Si hetero-bonding structures

APPLIED PHYSICS LETTERS

IF3.6

2024-05-090

PRE

Current transport mechanism of lateral Schottky barrier diodes on β-Ga2O3/SiC structure with atomic level interface

APPLIED PHYSICS LETTERS

IF3.6

2024-03-118

Thermal Transport Properties of β-Ga2O3 Thin Films on Si and SiC Substrates Fabricated by an Ion-Cutting Process

ACS APPLIED ELECTRONIC MATERIALS

IF4.7

2024-02-277

PRE

High speed surface acoustic wave and laterally excited bulk wave resonator based on single-crystal non-polar AlN film

APPLIED PHYSICS LETTERS

IF3.6

2023-12-195

PRE

Defect evolution in GaN thin film heterogeneously integrated with CMOS-compatible Si(100) substrate by ion-cutting technology

SCIENCE CHINA-INFORMATION SCIENCES

IF7.6

2023-10-202

PRE

Radiation-Hardened and Flexible Pb(Zr0.53Ti0.47)O3 Piezoelectric Sensor for Structural Health Monitoring

用于结构健康监测的辐射硬化和柔性Pb(Zr0.53Ti0.47)O3压电传感器

ACS APPLIED MATERIALS & INTERFACES

IF8.2

2023-10-126

PRE

ReS2 on GaN Photodetector Using H+ Ion-Cut Technology

ACS OMEGA

IF4.3

2022-12-209

OAAI

Wafer-scale single-crystalline β-Ga2O3 thin film on SiC substrate by ion-cutting technique with hydrophilic wafer bonding at elevated temperatures

SCIENCE CHINA-MATERIALS

IF7.4

2022-09-3019

Silicon carbide for integrated photonics

APPLIED PHYSICS REVIEWS

IF11.6

2022-08-0152

Efficient ion-slicing of 4-inch GaAs thin film for Si-based hetero-integration with ultra-smooth surface

SCIENCE CHINA-MATERIALS

IF7.4

2022-07-213

Efficient heterogeneous integration of InP/Si and GaSb/Si templates with ultra-smooth surfaces

SCIENCE CHINA-INFORMATION SCIENCES

IF7.6

2022-06-274

PRE

Thermodynamics of Ion-Cutting of β-Ga2O3 and Wafer-Scale Heterogeneous Integration of a β-Ga2O3 Thin Film onto a Highly Thermal Conductive SiC Substrate

ACS APPLIED ELECTRONIC MATERIALS

IF4.7

2021-12-2819

PREAI

InAs triangular quantum wells grown on InP/SiO2/Si heterogeneous substrate for mid-infrared emission

在InP/SiO2/Si异质衬底上生长的InAs三角形量子阱，用于中红外发射

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING

IF4.6

2021-12-013

PREAI

Tiangui You

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