Toru Akiyama

Mie University

H指数:25

被引数:3,587

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Polar Wurtzite NbAlN: A Transition-Metal Nitride Alloy for Polarization-Engineered GaN Heterostructures (Adv. Mater. 60/2026)

极性纤锌矿NbAlN：一种用于极化工程GaN异质结构的过渡金属氮化物合金（Adv. Mater. 60/2026）

Advanced Materials

IF26.8

2026-10-280

OAAI

Polar Wurtzite NbAlN: A Transition-Metal Nitride Alloy for Polarization-Engineered GaN Heterostructures

极性纤锌矿NbAlN：一种用于极化工程GaN异质结构的过渡金属氮化物合金

Advanced Materials

IF26.8

2026-09-040

OAAI

First-principles calculations of effective mass of impurity-doped Ga2O3

杂质掺杂Ga2O3有效质量的第一性原理计算

Journal of Crystal Growth

IF2

2026-05-011

PRE

First-principles study of excess Si transport in Si oxide on Si substrate using two-layer-oxide model for thermally oxidized interface

基于两层氧化物模型对热氧化界面处过剩Si在Si氧化物中的传输的第一性原理研究

Japanese Journal of Applied Physics

IF1.8

2026-02-162

PRE

Structures and Adsorption Behavior on N-Polar GaN(0001̅) Surface with Steps and Kinks: A DFT Study

Crystal Growth and Design

IF3.4

2026-01-220

PRE

Chemical vapor deposition of compound semiconductors: process simulation and experimental validation

化合物半导体化学气相沉积：工艺模拟与实验验证

Applied Physics Express

IF2.2

2026-01-010

PRE

First-principles structural analysis of polarity inversion boundaries in GaN

基于第一性原理的GaN极性反转界面的结构分析

Japanese Journal of Applied Physics

IF1.8

2025-12-010

PRE

Structures and stability of reconstructed BAs surfaces: an ab initio-based approach

重构的BAs表面的结构与稳定性：一种基于第一性原理的方法

Computational Materials Science

IF3.3

2025-08-090

Analysis of inversion-domain boundaries in four-layer polarity-inverted AlN structure

APPLIED PHYSICS LETTERS

IF3.6

2025-01-230

PRE

Structural Stability of Vicinal AlN(0001) and GaN(0001) Surfaces with Steps and Kinks under Metal-Organic Vapor-Phase Epitaxy Condition: A First-Principles Study

CRYSTAL GROWTH & DESIGN

IF3.4

2024-07-020

PRE

First-principles study on silicon emission from interface into oxide during silicon thermal oxidation

硅热氧化过程中从界面到氧化物的硅发射的第一性原理研究

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING

IF4.6

2023-08-012

PRE

Epitaxial Junction of Inversion Symmetry Breaking AlN and Centrosymmetric NbN: A Polarity Control of Wide-Bandgap AlN

ACS APPLIED ELECTRONIC MATERIALS

IF4.7

2023-01-093

PRE

Ab initio-based approach for the oxidation mechanisms at SiO2/4H-SiC interface: Interplay of dry and wet oxidants during interfacial reaction

PHYSICAL REVIEW MATERIALS

IF3.4

2021-11-036

PRE

Computational discovery of stable phases of graphene and h-BN van der Waals heterostructures composed of group III-V binary compounds

APPLIED PHYSICS LETTERS

IF3.6

2021-01-119

PREAI

Effect of Step Edges on Adsorption Behavior for GaN(0001) Surfaces during Metalorganic Vapor Phase Epitaxy: An Ab Initio Study

CRYSTAL GROWTH & DESIGN

IF3.4

2020-06-0414

PREAI

Modified approach for calculating individual energies of polar and semipolar surfaces of group-III nitrides

PHYSICAL REVIEW MATERIALS

IF3.4

2019-02-0531

OAAI

Scaled effective on-site Coulomb interaction in the DFT plus U method for correlated materials

PHYSICAL REVIEW B

IF3.7

2018-01-1022

PREAI

External electric field driven modification of the anomalous and spin Hall conductivities in Fe thin films on MgO(001)

PHYSICAL REVIEW B

IF3.7

2018-01-039

PREAI

Effects of Polytypism on the Thermoelectric Properties of Group-IV Semiconductor Nanowires: A Combination of Density Functional Theory and Boltzmann Transport Calculations

PHYSICAL REVIEW APPLIED

IF4.4

2017-08-186

PREAI

Mechanism and electric field induced modification of magnetic exchange stiffness in transition metal thin films on MgO(001)

PHYSICAL REVIEW B

IF3.7

2017-07-1810

PREAI

Toru Akiyama

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